BSC0993NDATMA1

BSC0993ND MOSFET OptiMOSTMPower-MOSFET,30V Powerstage5x6 Features •DualN-channelOptiMOS™MOSFET •Optimizedforcleanswitching •100%avalanchetested •Superiorthermalresistance •Optimizedforwirelesscharger •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 5 mΩ ID 17 A QOSS 8.6 nC QG(0V..4.5V) 6.7 nC Type/OrderingCode Package Marking RelatedLinks BSC0993ND PG-TISON-8 0993ND - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND 1Maximumratings atTA=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 17 10 A VGS=10V,TA=25°C VGS=10V,TA=100°C - 68 A TA=25°C - - 14 mJ ID=20A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 2.5 W TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 4.2 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) See Diagram 3 for more detailed information. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.0 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 5.6 4.2 7 5 mΩ VGS=4.5V,ID=7A VGS=10V,ID=7A Gate resistance1) RG 1.3 2.6 5.2 Ω - Transconductance gfs 24 48 - S |VDS|>2|ID|RDS(on)max,ID=11A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 870 1200 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 330 440 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 49 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 3.6 - ns VDD=15V,VGS=10V,ID=7A, RG,ext=1.6Ω Rise time tr - 3.8 - ns VDD=15V,VGS=10V,ID=7A, RG,ext=1.6Ω Turn-off delay time td(off) - 17 - ns VDD=15V,VGS=10V,ID=7A, RG,ext=1.6Ω Fall time tf - 3.0 - ns VDD=15V,VGS=10V,ID=7A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.1 - nC VDD=15V,ID=7A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.4 - nC VDD=15V,ID=7A,VGS=0to4.5V Gate to drain charge Qgd - 2.0 - nC VDD=15V,ID=7A,VGS=0to4.5V Switching charge Qsw - 2.7 - nC VDD=15V,ID=7A,VGS=0to4.5V Gate charge total Qg - 6.7 - nC VDD=15V,ID=7A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=15V,ID=7A,VGS=0to4.5V Gate charge total Qg - 13 18 nC VDD=15V,ID=7A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 5.4 - nC VDS=0.1V,VGS=0to4.5V Qoss - 8.6 11 nC VDD=15V,VGS=0V 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 2.5 A TA=25°C - 68 A TA=25°C - 0.76 1.1 V VGS=0V,IF=2.5A,Tj=25°C - 5 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 3 20 15 ID[A] Ptot[W] 2 10 1 5 0 0 40 80 120 0 160 0 40 80 TA[°C] 120 160 TA[°C] Ptot=f(TA) ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 102 10 102 0.5 1 µs 101 10 µs 101 0.2 0.1 100 µs 0.05 ZthJA[K/W] ID[A] 1 ms 10 ms 100 DC 0.02 100 0.01 single pulse -1 10 10-1 10-2 10-3 10-1 100 101 102 10-2 10-5 10-4 10-3 10-2 VDS[V] 100 101 102 103 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-1 ZthJA=f(tp);parameter:D=tp/T 6 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 250 10 10 V 200 8V 5V 8 4.5 V 3.3 V ID[A] RDS(on)[mΩ] 150 100 6 4.5 V 5V 8V 4 10 V 3.3 V 50 0 2 0 1 2 0 3 0 5 10 VDS[V] 15 20 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 250 160 200 120 ID[A] gfs[S] 150 80 100 40 50 150 °C 0 0 1 25 °C 2 3 4 5 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7 2.5 6 2.0 5 typ 1.5 VGS(th)[V] RDS(on)[mΩ] 4 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=7A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 150 °C 102 Ciss 103 IF[A] C[pF] Coss 101 102 Crss 101 0 5 10 15 100 20 25 10-1 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 10 15 V 6V 24 V VGS[V] IAV[A] 8 25 °C 101 100 °C 125 °C 6 4 2 100 100 101 102 103 0 0 tAV[µs] 4 8 12 16 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=7Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND 5PackageOutlines Figure1OutlinePG-TISON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2016-07-11 OptiMOSTMPower-MOSFET,30V BSC0993ND RevisionHistory BSC0993ND Revision:2016-07-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-07-11 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2016-07-11