BSC0996NS
MOSFET
OptiMOSªPower-MOSFET,34V
SuperSO8
8
Features
Features
•Optimizedfor5Vdriverapplication(WirelessCharging)
•LowFOMSWforHighFrequencySMPS
•100%Avalanchetested
•Improvedswitchingbehaviour
•N-channel
•Verylowon-resistanceRDS(on)@VGS=4.5V
•ExcellentgatechargexRDS(on)product(FOM)
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Superiorthermalresistance
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
34
V
RDS(on),max
9
mΩ
ID
13
A
QOSS
10
nC
QG(0V..4.5V)
7.2
nC
5
6
2
3
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSC0996NS
PG-TDSON-8
0996NS
-
1)
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
13
8.5
A
VGS=10V,TA=100°C
VGS=10V,TA=100°C
-
52
A
TA=25°C
-
-
35
A
TC=25°C
EAS
-
-
10
mJ
ID=25A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
2.5
W
TA=25°C,RthJA=50K/W3)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Pulsed drain current1)
2)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
-
4.6
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area3)
RthJA
-
-
50
K/W
-
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=34V,VGS=0V,Tj=25°C
VDS=34V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=16V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
10
8
12
9
mΩ
VGS=4.5V,ID=8A
VGS=10V,ID=8A
Gate resistance1)
RG
1.5
3
6.0
Ω
-
Transconductance
gfs
13
26
-
S
|VDS|>2|ID|RDS(on)max,ID=8A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
34
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
1100
1500
pF
VGS=0V,VDS=15V,f=1MHz
Output capacitance
Coss
-
390
520
pF
VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance
Crss
-
25
-
pF
VGS=0V,VDS=15V,f=1MHz
Turn-on delay time
td(on)
-
9.7
-
ns
VDD=15V,VGS=4.5V,ID=8A,
RG,ext=1.6Ω
Rise time
tr
-
4.4
-
ns
VDD=15V,VGS=4.5V,ID=8A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
8.9
-
ns
VDD=15V,VGS=4.5V,ID=8A,
RG,ext=1.6Ω
Fall time
tf
-
5.4
-
ns
VDD=15V,VGS=4.5V,ID=8A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
3.2
-
nC
VDD=15V,ID=8A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
1.7
-
nC
VDD=15V,ID=8A,VGS=0to4.5V
Gate to drain charge
Qgd
-
1.6
-
nC
VDD=15V,ID=8A,VGS=0to4.5V
Switching charge
Qsw
-
3.0
-
nC
VDD=15V,ID=8A,VGS=0to4.5V
Gate charge total
Qg
-
7.2
-
nC
VDD=15V,ID=8A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.8
-
V
VDD=15V,ID=8A,VGS=0to4.5V
Gate charge total
Qg
-
15
20
nC
VDD=15V,ID=8A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
6.2
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
10
13
nC
VDD=15V,VGS=0V
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
2
A
TA=25°C
-
52
A
TA=25°C
-
0.77
1.1
V
VGS=0V,IF=2.3A,Tj=25°C
-
10
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery charge
Qrr
Final Data Sheet
5
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
3.0
15
2.5
10
ID[A]
Ptot[W]
2.0
1.5
1.0
5
0.5
0.0
0
40
80
120
0
160
0
40
80
TA[°C]
120
160
TA[°C]
Ptot=f(TA)
ID=f(TA);parameter:VGS
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
102
10
0.5
102
1 µs
0.1
101
0.05
1 ms
ZthJA[K/W]
10 ms
ID[A]
0.2
101
10 µs
100 µs
0
10
DC
0.02
10
0
0.01
10-1
single pulse
10
-1
10-2
10-3
10-1
100
101
102
10-2
10-5
10-4
10-3
10-2
VDS[V]
100
101
102
103
tp[s]
ID=f(VDS);TA=25°C;D=0;parameter:tp
Final Data Sheet
10-1
ZthJA=f(tp);parameter:D=tp/T
6
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
150
28
24
10 V
5V
120
3V
4.5 V
20
ID[A]
RDS(on)[mΩ]
90
4V
60
3.2 V
16
3.5 V
4V
12
4.5 V
5V
6V
8
10 V
3.5 V
30
3.2 V
4
3V
2.8 V
0
0
1
2
0
3
0
5
10
VDS[V]
15
20
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
100
120
100
80
80
gfs[S]
ID[A]
60
25 °C
150 °C
60
40
40
20
0
20
0
1
2
3
4
5
0
0
VGS[V]
80
120
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
40
gfs=f(ID);Tj=25°C
7
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
24
2.5
20
2.0
1.5
VGS(th)[V]
RDS(on)[mΩ]
16
12
1.0
typ
8
0.5
4
0
-60
-20
20
60
100
0.0
-60
140
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=8A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
Ciss
3
10
102
IF[A]
C[pF]
Coss
102
Crss
101
101
100
0
10
20
100
30
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
10
15 V
6V
24 V
25 °C
VGS[V]
IAV[A]
8
101
100 °C
6
125 °C
4
2
100
100
101
102
103
0
0
tAV[µs]
4
8
12
16
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=8Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Dimension in mm
Figure2OutlineTape(TDSON-8)
Final Data Sheet
11
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
Figure3OutlineFootprint(TDSON-8)
Final Data Sheet
12
Rev.2.0,2016-07-13
OptiMOSªPower-MOSFET,34V
BSC0996NS
RevisionHistory
BSC0996NS
Revision:2016-07-13,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-07-13
Release of final version
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.0,2016-07-13