BSC112N06LD

BSC112N06LD MOSFET OptiMOSTM-T2PowerTransistor,60V PG-TDSON-8-4 8 Features ·DualN-channel,Logiclevel ·FastswitchingMOSFETsforSMPS ·OptimizedtechnologyforSynchronousRectification ·Pb-freeplating;RoHScompliant ·100%Avalanchetested ·SuperiorThermalResistance ·Halogen-freeaccordingtoIEC61249-2-21 ProductValidation Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 1 2 7 1 6 8 3 2 5 7 6 4 3 4 5 D1 D1 D2 D2 S1 S2 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 11.2 mΩ ID 20 A Type/OrderingCode Package BSC112N06LD SSO8 dual (TDSON-8-4) Final Data Sheet Marking 112N06LD 1 G1 G2 RelatedLinks - Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD 1Maximumratings atTA=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 20 A VGS=10V,TC=25°C - 80 A TA=25°C - - 80 mJ ID=10A,RGS=25Ω VGS -16 - 16 V - Power dissipation Ptot - - 65 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 2.3 °C/W - Device on PCB, 6 cm² cooling area3) RthJA - - 60 °C/W - Device on PCB, minimal footprint4) RthJA - - 100 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 1.7 2.2 V VDS=VGS,ID=28µA - 0.1 5 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=16V,VDS=0V RDS(on) - 9.5 12.5 11.2 15.8 mΩ VGS=10V,ID=17A VGS=4.5V,ID=10A Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) device mounted on a minimum pad (one layer, 70 µm thick) 2) Final Data Sheet 3 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 4020 pF VGS=0V,VDS=30V,f=1MHz 590 770 pF VGS=0V,VDS=30V,f=1MHz - 28 56 pF VGS=0V,VDS=30V,f=1MHz td(on) - 11 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Rise time tr - 3 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Turn-off delay time td(off) - 51 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Fall time tf - 7 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 3090 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 10 13 nC VDD=30V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 3.4 6.7 nC VDD=30V,ID=20A,VGS=0to10V Gate charge total1) Qg - 41 55 nC VDD=30V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 3.2 - V VDD=30V,ID=20A,VGS=0to10V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 20 A TC=25°C Diode pulse current IS,pulse - - 80 A TC=25°C Diode forward voltage VSD - 0.88 1.1 V VGS=0V,IF=17A,Tj=25°C trr - 35 - ns VR=30V,IF=9A,diF/dt=100A/µs Qrr - 35 - nC VR=30V,IF=9A,diF/dt=100A/µs Reverse recovery time1) 1) Reverse recovery charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 70 60 60 50 50 40 40 ID[A] Ptot[W] silicon limit 30 30 20 20 package limit 10 10 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TA[°C] 100 125 150 175 200 TA[°C] Ptot=f(TA),minimalfootprint ID=f(TA);minimalfootprint Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 10 ms single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs DC 101 100 ZthJC[K/W] ID[A] 1 ms 100 10-1 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 80 70 5V 10 V 70 60 4.5 V 60 50 4V 40 30 3.5 V RDS(on)[mΩ] ID[A] 50 30 3V 3.5 V 4V 20 20 4.5 V 10 0 40 10 3V 0 1 2 3 4 0 5 10 V 0 10 20 30 VDS[V] 40 50 60 70 80 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 80 30 70 25 60 20 RDS(on)[mΩ] ID[A] 50 40 30 175 °C 15 25 °C 10 20 175 °C 5 10 25 °C 0 0 1 2 3 4 5 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=17A;parameter:Tj 6 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 2.4 2.0 1.6 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 1.6 0.8 1.2 280 µA 0.8 28 µA 0.4 0.4 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 40 Tj[°C] 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=10A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 102 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss Coss 102 IF[A] 101 C[pF] 103 100 Crss 1 10 0 10 20 30 40 50 60 10-1 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 7 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 101 6 VGS[V] IAV[A] 25 °C 4 100 °C 0 10 2 150 °C 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 66 64 VBR(DSS)[V] 62 60 58 56 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD 5PackageOutlines DIMENSIONS A A1 b b1 D D1 D2 E E1 E2 E3 E4 e L M Θ aaa ddd MILLIMETERS MIN. MAX. 0.90 1.10 0.15 0.35 0.34 0.54 0.02 0.22 4.95 5.35 4.20 4.40 0.50 0.70 5.95 6.35 5.70 6.10 4.075 4.275 4.035 4.235 0.15 0.35 1.27 0.45 0.65 0.45 0.65 8.5° 11.5° 0.05 0.10 DOCUMENT NO. Z8B00189767 REVISION 01 SCALE 5:1 0 1 2 3 4mm EUROPEAN PROJECTION ISSUE DATE 31.07.2018 Figure1OutlineSSO8dual(TDSON-8-4),dimensionsinmm Final Data Sheet 9 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC112N06LD RevisionHistory BSC112N06LD Revision:2018-12-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-12-11 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2018-12-11