BSC155N06ND

BSC155N06ND MOSFET OptiMOSTM-T2PowerTransistor,60V PG-TDSON-8-4 8 Features ·DualN-channel,NormalLevel ·FastswitchingMOSFETs ·175°Coperatingtemperature ·Greenproduct(RoHScompliant) ·100%Avalanchetested ·Optimizedtechnologyfordrivesapplications ·Halogen-freeaccordingtoIEC61249-2-21 ·Superiorthermalresistance ProductValidation Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 1 2 7 1 6 8 3 2 5 7 6 4 3 4 5 D1 D1 D2 D2 S1 S2 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 15.5 mΩ ID 20 A Type/OrderingCode Package BSC155N06ND SSO8 dual (TDSON-8-4) Final Data Sheet Marking 155N06ND 1 G1 G2 RelatedLinks - Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND 1Maximumratings atTA=25°C,unlessotherwisespecified,onetransistoractive Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 20 A VGS=10V,TC=25°C - 80 A TA=25°C - - 40 mJ ID=10A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 50 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 3 °C/W - Device on PCB, 6 cm² cooling area3) RthJA - - 60 °C/W - Device on PCB, minimal footprint4) RthJA - - 100 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 4.0 V VDS=VGS,ID=20µA - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C IGSS - - 100 nA VGS=20V,VDS=0V RDS(on) - 12.9 15.5 mΩ VGS=10V,ID=17A Min. Typ. Max. V(BR)DSS 60 - Gate threshold voltage VGS(th) 2.0 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) device mounted on a minimum pad (one layer, 70 µm thick) 2) Final Data Sheet 3 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 2250 pF VGS=0V,VDS=30V,f=1MHz 380 490 pF VGS=0V,VDS=30V,f=1MHz - 15 30 pF VGS=0V,VDS=30V,f=1MHz td(on) - 11 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Rise time tr - 2 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Turn-off delay time td(off) - 19 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Fall time tf - 9 - ns VDD=30V,VGS=10V,ID=20A, RG,ext=11Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1730 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9 12 nC VDD=30V,ID=20A,VGS=0to10V Gate to drain charge Qgd - 2.0 4 nC VDD=30V,ID=20A,VGS=0to10V Gate charge total1) Qg - 21 29 nC VDD=30V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=30V,ID=20A,VGS=0to10V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 20 A TC=25°C Diode pulse current IS,pulse - - 80 A TC=25°C Diode forward voltage VSD - 0.91 1.1 V VGS=0V,IF=17A,Tj=25°C trr - 35 - ns VR=15V,IF=9A,diF/dt=100A/µs Qrr - 35 - nC VR=15V,IF=9A,diF/dt=100A/µs Reverse recovery time1) 1) Reverse recovery charge 1) 2) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 60 50 50 40 silicon limit 40 ID[A] Ptot[W] 30 30 20 package limit 20 10 10 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TA[°C] 100 125 150 175 200 TA[°C] Ptot=f(TA),minimalfootprint ID=f(TA);minimalfootprint Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 µs 10 ms DC 100 µs 101 100 ZthJC[K/W] ID[A] 1 ms 100 10-1 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND Diagram5:Typ.outputcharacteristics 80 Diagram6:Typ.drain-sourceonresistance 50 10 V 7 V 70 40 6.5 V 60 5V 6V 40 30 RDS(on)[mΩ] ID[A] 50 5.5 V 30 6V 6.5 V 20 5.5 V 10 V 20 10 5V 10 0 0 2 4 6 0 8 0 20 40 VDS[V] 60 ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 80 40 70 35 60 30 50 25 RDS(on)[mΩ] ID[A] 80 ID[A] 40 30 175 °C 20 15 25 °C 20 10 25 °C 175 °C 10 0 5 0 1 2 3 4 5 6 7 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=17A;parameter:Tj 6 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.0 4.0 3.5 1.6 2.5 1.2 VGS(th)[V] RDS(on)(normalizedto25°C) 3.0 0.8 2.0 200 µA 1.5 20 µA 1.0 0.4 0.5 0.0 -80 -40 0 40 80 120 160 0.0 -80 200 -40 0 Tj[°C] 40 80 120 160 200 Tj[°C] RDS(on)=f(Tj),ID=17A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 102 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 Coss IF[A] C[pF] 101 2 10 100 101 Crss 100 0 10 20 30 40 50 60 10-1 0.00 0.20 0.40 VDS[V] 0.80 1.00 1.20 1.40 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.60 IF=f(VSD);parameter:Tj 7 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 12 V 30 V 48 V 8 101 25 °C IAV[A] VGS[V] 6 4 0 10 100 °C 2 150 °C 10-1 100 101 102 103 tAV[µs] 0 0 4 8 12 16 20 24 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 66 64 VBR(DSS)[V] 62 60 58 56 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND 5PackageOutlines DIMENSIONS A A1 b b1 D D1 D2 E E1 E2 E3 E4 e L M Θ aaa ddd MILLIMETERS MIN. MAX. 0.90 1.10 0.15 0.35 0.34 0.54 0.02 0.22 4.95 5.35 4.20 4.40 0.50 0.70 5.95 6.35 5.70 6.10 4.075 4.275 4.035 4.235 0.15 0.35 1.27 0.45 0.65 0.45 0.65 8.5° 11.5° 0.05 0.10 DOCUMENT NO. Z8B00189767 REVISION 01 SCALE 5:1 0 1 2 3 4mm EUROPEAN PROJECTION ISSUE DATE 31.07.2018 Figure1OutlineSSO8dual(TDSON-8-4),dimensionsinmm Final Data Sheet 9 Rev.2.0,2018-12-11 OptiMOSTM-T2PowerTransistor,60V BSC155N06ND RevisionHistory BSC155N06ND Revision:2018-12-11,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-12-11 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2018-12-11