BSC430N25NSFDATMA1

BSC430N25NSFD MOSFET OptiMOSTMFDPower-Transistor,250V TSON-8-3 8 7 Features 5 6 6 5 •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification •175°Crated ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 Table1KeyPerformanceParameters 7 8 Pin 1 2 4 3 3 4 2 1 S1 8D S2 7D Parameter Value Unit S3 6D VDS 250 V G4 5D RDS(on),max 43 mΩ ID 36 A Type/OrderingCode Package Marking RelatedLinks BSC430N25NSFD TSON-8-3 430N25F - Final Data Sheet 1 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 36 26 A TC=25°C TC=100°C - 144 A TC=25°C - - 159 mJ ID=23A,RGS=25Ω dv/dt - - 60 kV/µs ID=36A,VDS=125V, di/dt=1500A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 214 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodedv/dt 2Thermalcharacteristics at Tj=25 °C, unless otherwise specified Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.4 0.7 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 50 K/W - 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=137µA - 0.1 10 1 100 µA VDS=200V,VGS=0V,Tj=25°C VDS=200V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V RDS(on) - 34 43 mΩ VGS=10V,ID=36A Gate resistance RG - 3.6 5.4 Ω - Transconductance gfs 37 73 - S |VDS|>2|ID|RDS(on)max,ID=36A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 250 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance 1) Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2770 3680 pF VGS=0V,VDS=125V,f=1MHz Coss - 157 209 pF VGS=0V,VDS=125V,f=1MHz Reverse transfer capacitance Crss - 6 10 pF VGS=0V,VDS=125V,f=1MHz Turn-on delay time td(on) - 8 - ns VDD=125V,VGS=10V,ID=16.5A, RG,ext=1.6Ω Rise time tr - 6 - ns VDD=125V,VGS=10V,ID=16.5A, RG,ext=1.6Ω Turn-off delay time td(off) - 29 - ns VDD=125V,VGS=10V,ID=16.5A, RG,ext=1.6Ω Fall time tf - 10 - ns VDD=125V,VGS=10V,ID=16.5A, RG,ext=1.6Ω Unit Note/TestCondition Input capacitance1) 1) Output capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Values Min. Typ. Max. Qgs - 13 - nC VDD=125V,ID=36A,VGS=0to10V Gate to drain charge Qgd - 4.1 - nC VDD=125V,ID=36A,VGS=0to10V Switching charge Qsw - 8.3 - nC VDD=125V,ID=36A,VGS=0to10V Gate charge total Qg - 34 42 nC VDD=125V,ID=36A,VGS=0to10V Gate plateau voltage Vplateau - 4.5 - V VDD=125V,ID=36A,VGS=0to10V Output charge1) Qoss - 74 99 nC VDD=125V,VGS=0V Gate to source charge 1) 1) 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD Table7Reversediode Parameter Symbol Values Unit Note/TestCondition 36 A TC=25°C - 144 A TC=25°C - - 36 A TC=25°C,di/dt=1500A/µs VSD - 0.9 1.2 V VGS=0V,IF=36A,Tj=25°C Reverse recovery time3) trr - 96 - ns VR=125V,IF=12.5A, diF/dt=100A/µs Reverse recovery charge3) Qrr - 227 - nC VR=125V,IF=12.5A, diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode hard commutation current2) IS,hard Diode forward voltage Diode continous forward current 1) 1) Diode pulse current is defined by thermal and/or package limits Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs 3) Defined by design. Not subject to production test 2) Final Data Sheet 5 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 240 40 200 30 ID[A] Ptot[W] 160 120 20 80 10 40 0 0 25 50 75 100 125 150 175 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 0.5 2 10 10 µs 100 µs ZthJC[K/W] ID[A] 0.2 1 ms 101 10 ms 10-1 0.1 0.05 0.02 DC 0 10 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 120 100 100 80 10 V 7V 80 RDS(on)[mΩ] ID[A] 5V 60 60 4.5 V 5V 40 7V 40 10 V 4.5 V 20 20 0 0 1 2 3 4 0 5 0 10 VDS[V] 20 30 40 30 40 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 60 80 70 60 40 ID[A] gfs[S] 50 40 30 20 175 °C 20 10 25 °C 0 0 2 4 6 0 0 VGS[V] 20 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 7 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 120 4.0 3.5 100 1370 µA 3.0 137 µA 80 VGS(th)[V] RDS(on)[mΩ] 2.5 60 max 2.0 1.5 40 typ 1.0 20 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=37A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25°C, 98% 175°C, 98% Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 200 V 6 125 V 50 V VGS[V] IAS[A] 25 °C 101 100 °C 4 150 °C 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=37Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 280 270 VBR(DSS)[V] 260 250 240 230 220 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD 5PackageOutlines DIMENSION A b b1 c D D1 E E1 E2 E3 e K2 L L1 L2 DOCUMENT NO. Z8B00187559 MILLIMETERS MIN. MAX. 0.34 - 1.10 0.54 0.05 REVISION 01 SCALE 0.20 4.90 4.25 5.90 4.00 3.14 0.20 0 5.10 4.45 6.10 4.20 3.34 0.40 10:1 1 2mm EUROPEAN PROJECTION 1.27 (0.37) 0.60 0.43 0.80 0.63 ISSUE DATE 14.12.2017 (0.25) Figure1OutlineTSON-8-3,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2018-05-14 OptiMOSTMFDPower-Transistor,250V BSC430N25NSFD RevisionHistory BSC430N25NSFD Revision:2018-05-14,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-03-14 Release of final version 2.1 2018-05-14 Insert Rg max TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2018-05-14