BSD214SNL6327

BSD214SN OptiMOS™2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Super Logic level (2.5V rated) 20 V VGS=4.5 V 140 mW VGS=2.5 V 250 ID 1.5 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT363 • 100% lead-free; RoHS compliant 6 5 4 • Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD214SN PG-SOT- H6327: 3000 pcs/ reel X5s Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.5 T A=70 °C 1.2 6 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.5 A, R GS=25 W 3.7 Reverse diode dv /dt dv /dt I D=1.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±12 V 0.5 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=1.2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.4 page 2 2013-04-10 BSD214SN Parameter Values Symbol Conditions Unit min. typ. max. - 107 143 - 46 62 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 6 9 Turn-on delay time t d(on) - 4.1 - Rise time tr - 7.8 - Turn-off delay time t d(off) - 6.8 - Fall time tf - 1.4 - Gate to source charge Q gs - 0.24 - Gate to drain charge Q gd - 0.2 - Gate charge total Qg - 0.8 - Gate plateau voltage V plateau - 2.2 - V - - 0.5 A - - 6 - 0.8 1.1 V - 8.4 - ns - 1.7 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=1.5 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=10 V, I D=1.5 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.4 T A=25 °C V GS=0 V, I F=1.5 A, T j=25 °C V R=10 V, I F=1.5 A, di F/dt =100 A/µs page 3 2013-04-10 BSD214SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥4.5 V 0.5 1.5 0.375 ID [A] Ptot [W] 1 0.25 0.5 0.125 0 0 0 40 80 120 0 20 40 TA [°C] 60 80 100 120 140 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 1 µs 10 µs 100 µs 1 ms 100 0.5 102 10 ms ZthJA [K/W] ID [A] 0.2 10-1 DC 10-2 0.02 101 0.01 single pulse 100 10-3 10-1 10-2 10-1 100 101 102 VDS [V] Rev 2.4 0.1 0.05 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2013-04-10 BSD214SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 280 2.2 V 3.5 V 2.5 V 240 3V 6 200 RDS(on) [mW] ID [A] 4.5 V 4 3V 160 3.5 V 120 4.5 V 2.5 V 6V 80 2 2.3 V 40 2V 1.8 V 0 0 0 1 2 3 0 1 2 VDS [V] 3 4 5 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 1.5 8 6 gfs [S] ID [A] 1 25 °C 4 0.5 2 150 °C 0 0 0 1 2 3 VGS [V] Rev 2.4 0 2 4 6 ID [A] page 5 2013-04-10 BSD214SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 240 1.6 200 1.2 98 % 120 VGS(th) [V] RDS(on) [mW] 160 98 % typ typ 0.8 2% 80 0.4 40 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 100 Ciss 102 25 °C IF [A] C [pF] Coss 10-1 150 °C 150 °C, 98% 101 Crss 10-2 100 10-3 0 5 10 15 20 VDS [V] Rev 2.4 25 °C, 98% 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2013-04-10 3 Safe operating area BSD214SN 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 W VGS=f(Qgate); ID=1.5 A pulsed parameter: Tj(start) parameter: VDD 101 6 10 V 5 4V 16 V 100 VGS [V] IAV [A] 4 25 °C 100 °C 3 125 °C 2 1 10-1 0 100 101 102 0 103 0.5 tAV [µs] 1 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=250 µA 25 V GS 24 Qg 23 VBR(DSS) [V] 22 21 20 V gs(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 2.4 page 7 2013-04-10 BSD214SN SOT-363 Package Outline: Reflow soldering: Packing: Dimensions in mm Rev 2.4 page 8 2013-04-10 BSD214SN Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 page 9 2013-04-10