BSD223PH6327XTSA1

BSD 223P OptiMOS-P Small-Signal-Transistor Feature Product Summary • Dual P-Channel VDS -20 V • Enhancement mode RDS(on) 1.2 Ω • Super Logic Level (2.5 V rated) ID -0.39 A • 150°C operating temperature PG-SOT-363 4 • Avalanche rated 5 6 • dv/dt rated 2 3 1 • Qualified according to AEC Q101 VPS05604 • Halogen-free according to IEC61249-2-21 MOSFET1: 1,2,6 MOSFET2: 3,4,5 Type Package Tape & Reel BSD 223P PG-SOT-363 H6327: 3000pcs/r X1s Drain pin 6,3 Marking Gate pin 2,5 Source pin 1,4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -0.39 TA=70°C -0.31 Pulsed drain current ID puls Unit -1.56 TA=25°C EAS 1.4 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.25 W -55... +150 °C Avalanche energy, single pulse ID =-0.39 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.39A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class Class 0 JESD22-A114-HBM Rev.1.6 Page 1 2014-07-29 BSD 223P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 180 Thermal resistance, junction - ambient, leaded RthJA - - 500 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-1.5µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.27 2.1 Ω RDS(on) - 0.7 1.2 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Rev.1.6 Page 2 2014-07-29 BSD 223P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.35 0.7 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-0.31A Input capacitance Ciss VGS =0, VDS =-15V, - 45 56 Output capacitance Coss f=1MHz - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 3.8 5.7 Rise time tr ID =-0.39A, RG=6Ω - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 - -0.04 - -0.4 -0.5 - -0.5 -0.62 V(plateau) VDD =-10V, ID =-0.39A - -2.2 -2.7 IS - - -0.39 A - - -1.56 -1.33 V ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-0.39A VDD =-10V, ID =-0.39A, -0.05 nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.39 - -1 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 7.6 9.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 1.1 1.4 nC Rev.1.6 Page 3 2014-07-29 BSD 223P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V BSD 223P -0.42 0.28 W A 0.24 -0.36 0.22 -0.32 BSD 223P -0.28 0.18 ID Ptot 0.2 -0.24 0.16 0.14 -0.2 0.12 -0.16 0.1 -0.12 0.08 0.06 -0.08 0.04 -0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 °C 1 BSD 223P 10 3 BSD 223P K/W A 10 2 = ID V DS -10 0 Z thJA /I D tp = 390.0µs R DS ( on ) 1 ms 10 1 10 0 D = 0.50 0.20 -10 -1 10 10 ms -1 0.10 0.05 0.02 10 -2 0.01 single pulse -10 -2 -10 -1 -10 0 DC 1 -10 V -10 2 VDS Rev.1.6 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2014-07-29 BSD 223P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C parameter: VGS 0.7 4 3V 4V A 4.5V 6V 7V 8V 0.5 10V RDS(on) Ω -I D 2.5V 3 2.5 0.4 2 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V 2.2V 0.3 1.5 0.2 1 0.1 0 0 0.5 0.3 0.6 V 0.9 0 0 1.5 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 1.1 S A 0.9 0.8 g fs -I D 0.5 0.4 0.7 0.6 0.5 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.5 1 1.5 2 V 0 0 3 -VGS Rev.1.6 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID Page 5 2014-07-29 BSD 223P 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -0.39 A, VGS = -4.5 V parameter: VGS = VDS 1.6 1.6 V 98% - VGS(th) RDS(on) Ω 1.2 1 98% 1.2 1 typ. typ. 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -60 -20 20 60 °C 100 2% 0 -60 160 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj 10 2 -10 1 BSD 223P A Ciss C IF -10 0 pF Coss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 2 4 6 8 10 12 V 15 -VDS Rev.1.6 Page 6 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD 2014-07-29 BSD 223P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -0.39 A VGS = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -0.39 A pulsed; Tj = 25 °C 1.4 -16 BSD 223P V mJ -12 EAS VGS 1 -10 0.8 -8 20% 0.6 -6 50% 80% 0.4 -4 0.2 -2 0 20 40 60 80 100 120 °C 160 Tj 0 0 0.2 0.4 0.6 0.8 1 nC 1.3 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSD 223P V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev.1.6 Page 7 2014-07-29 BSD 223P Package Outline: Footprint: Packaging: Reflow soldering: Dimensions in mm For symmetric types there is no defined Pin 1 orientation in the reel. Rev. 1.6 page 8 2014-07-29 BSD 223P Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.6 page 9 2014-07-29