BSD235CL6327

BSD235C OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 1200 350 mW VGS=±2.5 V 2100 600 -0.53 0.95 · Complementary P + N channel · Enhancement mode VDS · Super Logic level (2.5V rated) RDS(on),max · Avalanche rated ID · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant A PG-SOT-363 · Halogen-free according to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Information Marking Lead Free Packing BSD235C PG-SOT-363 H6327: 3000 pcs / reel X9s Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Value Symbol Conditions Unit P N T A=25 °C -0.53 0.95 T A=70 °C -0.46 0.76 I D,pulse T A=25 °C -2.1 3.8 Avalanche energy, single pulse E AS P: I D=-0.53 A, N: I D=0.95 A, R GS=25 W 1.4 1.6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Continuous drain current Pulsed drain current ID ESD class Soldering temperature T A=25 °C JESD22-A114-HBM T solder mJ ±12 V 0.5 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=-0.46 A - 0.7 - N |V DS|>2|I D|R DS(on)max, I D=0.76 A - 2 - P I GSS µA N Drain-source on-state resistance Transconductance S 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB Rev.2.4 page 2 2015-10-08 BSD235C Parameter Values Symbol Conditions Unit min. typ. max. - 37 - - 47 - - 17 - - 24 - P Crss - 14 - N - 3 - P t d(on) - 3.8 - - 3.8 - - 5.0 - - 3.6 - - 5.1 - - 4.5 - P tf - 3.2 - N - 1.2 - P Q gs - -0.09 - - -0.2 - - -0.4 - - -2.4 - - 0.11 - - 0.09 - - 0.34 - - 2.4 - Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance Turn-on delay time V GS=0 V, P: V DS=-10 V, N: V DS= 10 V, f =1 MHz N Rise time P tr N Turn-off delay time P t d(off) N Fall time P: V DD=-10 V, V GS=-4.5 V, R G=6 W, I D=-0.53 A N: V DD=10 V, V GS=4.5 V, R G=6 W, I D=0.95 A pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Gate to source charge N Q gs Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Rev.2.4 V DD=-10 V, I D=-0.53 A, V GS=0 to -4.5 V V DD=16 V, I D=0.95 A, V GS=0 to 4.5 V page 3 nC 2015-10-08 BSD235C Parameter Values Symbol Conditions Unit min. typ. max. - - -0.42 Reverse Diode Diode continuous forward current P IS N A 0.5 T C=25 °C Diode pulse current Diode forward voltage Reverse recovery time P I S,pulse - - -2.1 N - - 3.8 P V SD V GS=0 V, I F=-0.53 A, T j=25 °C - -1 -1.2 N V GS=0 V, I F=0.95 A, T j=25 °C - 0.9 1.1 - 7.6 - - 5.2 - - 1.1 - - 0.97 - P t rr N Reverse recovery charge P Q rr V R=±10 V, I F=I S, di F/dt =100 A/µs N Rev.2.4 page 4 V ns nC 2015-10-08 BSD235C 2 Power dissipation (N) P tot=f(T A) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 Ptot [W] Ptot [W] 1 Power dissipation (P) 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 40 80 120 0 160 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (P) 4 Drain current (N) I D=f(T A) I D=f(T A) parameter: V GS≤-4.5 V parameter: V GS≥4.5 V 1 0.8 0.8 0.6 0.6 ID [A] -ID [A] 1 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 TA [°C] Rev.2.4 0 40 80 TA [°C] page 5 2015-10-08 BSD235C 5 Safe operating area (P) 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 I D=f(V DS); T A=25 °C; D =0 parameter: t p parameter: t p 101 101 1 µs 10 µs 1 µs 10 µs 100 100 100 µs 1 ms ID [A] -ID [A] 100 µs 1 ms 10 ms 10 ms 10-1 10-1 DC 10-2 10-2 10-1 100 101 102 10-1 100 101 102 DC -VDS [V] VDS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJA=f(t p) Z thJA=f(t p) parameter: D =t p/T parameter: D =t p/T 103 103 0.5 0.5 ZthJA [K/W] 102 ZthJA [K/W] 102 0.2 0.1 0.05 0.02 0.01 101 0.2 0.1 0.05 0.02 101 0.01 single pulse single pulse 100 100 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] Rev.2.4 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 6 2015-10-08 BSD235C 9 Typ. output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 5 5 4 4 4.5 V 10 V 10 V 4.5 V 3.5 V ID [A] 3 ID [A] 3 3.5 V 2 3V 2 3V 2.5 V 1 1 2.5 V 2.3 V 2.3 V 2V 1.8 V 0 0 1 2 3 2V 1.8 V 0 4 5 0 1 2 VDS [V] 3 4 5 VDS [V] 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 2000 700 1800 2.2 V 2.2 V 600 1600 3.3 V 2.5 V 3.5 V 3V 500 1400 3V 3.3 V 1200 RDS(on) [mW] RDS(on) [mW] 2.5 V 1000 4.5 V 800 600 400 3.5 V 300 4.5 V 10 V 10 V 200 400 100 200 0 0 0 1 2 3 4 ID [A] Rev.2.4 0 1 2 3 4 ID [A] page 7 2015-10-08 BSD235C 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | ID| RDS(on)max I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j parameter: T j 1 1 0.75 0.75 ID [A] -ID [A] 13 Typ. transfer characteristics (P) 0.5 0.5 150 °C 25 °C 0.25 0.25 150 °C 25 °C 0 0 0 1 2 3 0 1 -VGS [V] 2 3 VGS [V] 15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=-0.53 A; V GS=-4.5 V R DS(on)=f(T j); I D=0.95 A; V GS=4.5 V 1800 600 1600 500 1400 98% 400 RDS(on) [mW] RDS(on) [mW] 1200 1000 typ 800 600 98% typ 300 200 400 100 200 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.4 -60 -20 20 60 100 140 180 Tj [°C] page 8 2015-10-08 BSD235C 22 Forward characteristics of reverse diode (N) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 101 101 100 100 25 °C IF [A] -IF [A] 21 Forward characteristics of reverse diode (P) 10-1 0.5 A 10-1 -0.53 A 25 °C 150 °C 0.5 A 150 °C -0.53 A 10-2 10-2 0 0.4 0.8 1.2 1.6 0 0.4 0.8 -VSD [V] 1.2 1.6 VSD [V] 23 Avalanche characteristics (P) 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 100 100 25 °C 100 °C 25 °C 100 °C 125 °C IAV [A] -IAV [A] 125 °C 10-1 10-2 10-2 100 101 102 103 tAV [µs] Rev.2.4 10-1 100 101 102 103 tAV [µs] page 9 2015-10-08 BSD235C 17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=-1.5 µA V GS(th)=f(T j); V GS=V DS; I D=1.6 µA 1.6 1.6 1.2 1.2 98% VGS(th) [V] -VGS(th) [V] 98% typ 0.8 typ 0.8 2% 2% 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 102 102 Ciss Ciss Coss Crss C [pF] C [pF] Coss 101 101 Crss 100 100 0 5 10 15 20 VDS [V] Rev.2.4 0 5 10 15 20 VDS [V] page 10 2015-10-08 BSD235C 25 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-0.53 A pulsed V GS=f(Q gate); I D=0.95 A pulsed parameter: V DD parameter: V DD 6 6 5 5 4 4 10 V -10 V 4V -4 V VGS [V] -VGS [V] 16 V -16 V 3 3 2 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 -Qgate [nC] 0.3 0.4 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=-250 µA V BR(DSS)=f(T j); I D=250 µA 25 25 24 24 23 23 22 22 VBR(DSS) [V] -VBR(DSS) [V] 0.6 Qgate [nC] 27 Drain-source breakdown voltage (P) 21 20 21 20 19 19 18 18 17 17 16 16 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.4 0.5 -60 -20 20 60 100 140 Tj [°C] page 11 2015-10-08 BSD235C SOT-363 Package Outline: Footprint: Packing: Reflow soldering: Dimensions in mm Rev.2.4 page 12 2015-10-08 BSD235C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 page 13 2015-10-08