BSD816SN
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
VDS
• N-channel
RDS(on),max
• Enhancement mode
• Ultra Logic level (1.8V rated)
20
V
VGS=2.5 V
160
mW
VGS=1.8 V
240
ID
1.4
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT363
• 100% lead-free; RoHS compliant
6
• Halogen-free according to IEC61249-2-21
1
2
5
4
3
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSD816SN
PG-SOT363
H6327: 3000 pcs/ reel
XAs
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
1.4
T A=70 °C
1.1
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
5.6
Avalanche energy, single pulse
E AS
I D=1.4 A, R GS=25 W
3.7
Reverse diode dv /dt
dv /dt
I D=1.4 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
±8
V
Power dissipation1)
P tot
0.5
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
0 (2|I D|R DS(on)max,
I D=1.1 A
S
1)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.5
page 2
2013-04-15
BSD816SN
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
126
180
-
47
67
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
7
10
Turn-on delay time
t d(on)
-
5.3
-
Rise time
tr
-
9.0
-
Turn-off delay time
t d(off)
-
11
-
Fall time
tf
-
2.2
-
Gate to source charge
Q gs
-
0.2
-
Gate to drain charge
Q gd
-
0.2
-
Gate charge total
Qg
-
0.6
-
Gate plateau voltage
V plateau
-
1.6
-
V
-
-
0.5
A
-
-
6
-
0.87
1.1
V
-
8.1
-
ns
-
1.4
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=2.5 V,
I D=1.4 A, R G,ext=6 W
pF
ns
Gate Charge Characteristics
V DD=10 V, I D=1.4 A,
V GS=0 to 2.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.5
T A=25 °C
V GS=0 V, I F=1.4 A,
T j=25 °C
V R=10 V, I F=1.4 A,
di F/dt =100 A/µs
page 3
2013-04-15
BSD816SN
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥2.5 V
1.5
0.5
1.25
0.375
ID [A]
Ptot [W]
1
0.25
0.75
0.5
0.125
0.25
0
0
0
40
80
120
160
0
40
TA [°C]
80
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
1 µs
10 µs
100 µs
1 ms
100
0.5
102
10 ms
10-1
ZthJA [K/W]
ID [A]
0.2
DC
10-2
0.02
101
0.01
single pulse
100
10-3
10-1
10-2
10-1
100
101
102
VDS [V]
Rev 2.5
0.1
0.05
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
page 4
2013-04-15
BSD816SN
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
3
400
2V
1.3 V
350
1.4 V
2.5 V
2.5
1.5 V
1.8 V
300
1.6 V
1.8 V
2
RDS(on) [mW]
ID [A]
250
1.5
1.6 V
200
150
2V
1
1.5 V
2.5 V
100
1.4 V
0.5
50
1.3 V
1.2 V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
1
VDS [V]
2
3
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
1.5
10
8
1
ID [A]
gfs [S]
6
4
25 °C
0.5
150 °C
2
0
0
0
1
1
2
2
VGS [V]
Rev 2.5
0
1
2
3
4
ID [A]
page 5
2013-04-15
BSD816SN
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=1.4 A; V GS=2.5 V
V GS(th)=f(T j); V DS=VGS; I D=3.7 µA
parameter: I D
280
1.2
240
0.8
200
98%
160
120
VGS(th) [V]
RDS(on) [mW]
98%
typ
typ
0.4
2%
80
0
40
0
-0.4
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
101
25 °C
100
Ciss
102
Coss
IF [A]
C [pF]
150°C, 98%
101
150 °C
10-1
Crss
25°C, 98%
10-2
100
10-3
0
5
10
15
20
VDS [V]
Rev 2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD [V]
page 6
2013-04-15
BSD816SN
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=1.4 A pulsed
parameter: T j(start)
parameter: V DD
101
5
4.5
4
3.5
100
VGS [V]
IAV [A]
3
25 °C
100 °C
10 V
4V
2.5
16 V
2
125 °C
1.5
1
0.5
10-1
0
100
101
102
0
103
0.25
tAV [µs]
0.5
0.75
1
1.25
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
V GS
24
Qg
23
VBR(DSS) [V]
22
21
20
V gs(th)
19
18
Q g(th)
17
Q sw
Q gs
16
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev 2.5
page 7
2013-04-15
BSD816SN
SOT363
Package Outline:
Reflow soldering:
Packing:
Dimensions in mm
Rev 2.5
page 8
2013-04-15
BSD816SN
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.5
page 9
2013-04-15
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