BSF024N03LT3GXUMA1

BSF024N03LT3 G OptiMOSTM3 Power-MOSFET Product Summary Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) VDS 30 V RDS(on),max 2.4 mW ID 106 A • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (2|I D|R DS(on)max, I D=30 A 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.1 page 2 2013-10-24 BSF024N03LT3 G Parameter Values Symbol Conditions Unit min. typ. max. - 4100 5500 - 1730 2300 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance Crss - 84 - Turn-on delay time t d(on) - 5.7 - Rise time tr - 5.6 - Turn-off delay time t d(off) - 29 - Fall time tf - 4.8 - Gate to source charge Q gs - 11.9 - Gate charge at threshold Q g(th) - 6.6 - Gate to drain charge Q gd - 5.8 - Switching charge Q sw - 11.1 - Gate charge total Qg - 26 34 Gate plateau voltage V plateau - 2.9 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 53 71 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 22 - Output charge Q oss V DD=15 V, V GS=0 V - 36 - - - 35 - - 400 V DD=15 V, V GS=10 V, I D=30 A, R G,ext=1.6 W pF ns Gate Charge Characteristics6) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.81 1.2 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/µs - - 28 nC 6) See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2013-10-24 BSF024N03LT3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 120 40 80 ID [A] Ptot [W] 30 20 40 10 0 0 0 40 80 120 160 0 40 80 120 160 TC [°C] TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 limited by on-state resistance 1 µs 10 µs 0.5 102 100 100 µs 0.2 101 DC ZthJC [K/W] ID [A] 0.1 1 ms 0.05 10-1 0.02 0.01 10 ms 100 10-1 10-3 10-1 100 101 102 VDS [V] Rev. 2.1 single pulse 10-2 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-10-24 BSF024N03LT3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 12 5V 10 V 4.5 V 320 RDS(on) [mW] 8 240 ID [A] 4V 160 3V 3.2 V 3.5 V 4 3.5 V 4V 4.5 V 80 7V 5V 3.2 V 10 V 3V 2.8 V 0 0 0 1 2 3 0 10 20 VDS [V] 30 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 160 240 140 200 120 160 gfs [S] ID [A] 100 80 120 60 80 40 40 150 °C 20 25 °C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.1 0 40 80 120 160 ID [A] page 5 2013-10-24 BSF024N03LT3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 µA 6 2.5 5 2 1.5 3 VGS(th) [V] RDS(on) [mW] 4 98 % typ 1 2 0.5 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 25 °C 150 °C, 98% Ciss Coss 103 100 IF [A] C [pF] 150 °C Crss 102 10 101 1 0 10 20 30 VDS [V] Rev. 2.1 25 °C, 98% 0.0 0.5 1.0 1.5 2.0 VSD [V] page 6 2013-10-24 BSF024N03LT3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 10 15 V 6V 24 V 25 °C 100 °C VGS [V] IAV [A] 125 °C 8 10 6 4 2 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 40 50 60 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 VBR(DSS) [V] 30 28 26 V gs(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.1 page 7 2013-10-24 BSF024N03LT3 G Package Outline Rev. 2.1 page 8 2013-10-24 BSF024N03LT3 G Package Outline CanPAK PG-TDSON-8: Tape Dimensions in mm Rev. 2.1 page 9 2013-10-24 BSF024N03LT3 G Dimensions in mm Recommended stencil thikness 150 mm Rev. 2.1 page 10 2013-10-24 BSF024N03LT3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 11 2013-10-24