BSF450NE7NH3

BSF450NE7NH3G MOSFET OptiMOSª3Power-MOSFET,75V CanPAKS Features •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •Dualsidedcooling •Lowparasiticinductance •Lowprofile(2|ID|RDS(on)max,ID=8A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 75 - Gate threshold voltage VGS(th) 2.3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 390 - pF VGS=0V,VDS=37.5V,f=1MHz Output capacitance Coss - 110 - pF VGS=0V,VDS=37.5V,f=1MHz Reverse transfer capacitance Crss - 22 - pF VGS=0V,VDS=37.5V,f=1MHz Turn-on delay time td(on) - 8.0 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Rise time tr - 11.3 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Turn-off delay time td(off) - 11 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Fall time tf - 3.2 - ns VDD=37.5V,VGS=10V,ID=8A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate to drain charge Qgd - 2 - nC VDD=37.5V,ID=8A,VGS=0to10V Switching charge Qsw - 3 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate charge total Qg - 6 - nC VDD=37.5V,ID=8A,VGS=0to10V Gate plateau voltage Vplateau - 5.5 - V VDD=37.5V,ID=8A,VGS=0to10V Output charge Qoss - 7 - nC VDD=37.5V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 15 A TC=25°C - 60 A TC=25°C - 0.9 1.2 V VGS=0V,IF=8A,Tj=25°C trr - 24 - ns VR=37.5V,IF=IS,diF/dt=400A/µs Qrr - 87 - nC VR=37.5V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 20 20 15 15 ID[A] Ptot[W] Diagram1:Powerdissipation 10 10 5 0 5 0 40 80 120 0 160 0 25 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 0.5 2 10 0.2 1 µs 10 10 µs 0 1 ID[A] 100 µs 1 ms 100 0.05 ZthJC[K/W] 10 10 ms 0.02 0.01 10-1 DC 0.1 single pulse 10-1 10-2 10-1 100 101 102 10-2 10-6 10-5 VDS[V] 10-3 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-4 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 80 5.5 V 10 V 6V 70 8V 45 60 7V RDS(on)[mΩ] ID[A] 50 7V 30 15 8V 40 10 V 30 20 6V 10 5.5 V 5V 0 0 1 2 0 3 0 20 VDS[V] 40 60 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 60 15 45 gfs[S] ID[A] 10 30 5 15 150 °C 0 0 2 25 °C 4 6 8 10 0 0 VGS[V] 10 15 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 5 gfs=f(ID);Tj=25°C 7 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 80 4 70 80 µA 60 3 max 8 µA VGS(th)[V] RDS(on)[mΩ] 50 typ 40 2 30 20 1 10 0 -60 -20 20 60 100 140 0 -60 180 -20 20 60 Tj[°C] 100 140 RDS(on)=f(Tj);ID=8A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 3 102 10 25 °C 150 °C 25°C 98% 150°C 98% Ciss Coss IF[A] C[pF] 180 Tj[°C] 2 10 101 Crss 101 0 25 50 75 100 0.0 0.5 VDS[V] 1.5 2.0 2.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 IF=f(VSD);parameter:Tj 8 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 37.5V 15 V 9 60 V 8 7 VGS[V] IAV[A] 6 101 5 4 3 125°C 100°C 25°C 2 1 100 100 101 102 103 104 0 0 1 tAV[µs] 2 3 4 5 6 7 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=8Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 90 VBR(DSS)[V] 80 70 60 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G 5PackageOutlines Figure1OutlineMG-WDSON-2,dimensionsinmm/inches Final Data Sheet 10 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Figure2OutlineTape(MG-WDSON-2) Final Data Sheet 11 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G Figure3OutlineBoardpad(MG-WDSON-2) Final Data Sheet 12 Rev.2.3,2017-06-19 OptiMOSª3Power-MOSFET,75V BSF450NE7NH3G RevisionHistory BSF450NE7NH3 G Revision:2017-06-19,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2015-03-30 Release of Final version 2.3 2017-06-19 Change of VGS(th) max value to 3.8V TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.3,2017-06-19