BSL207SP
Rev. 2.05
OptiMOS-P Small-Signal-Transistor
Feature
Product Summary
• P-Channel
VDS
-20
V
• Enhancement mode
RDS(on)
41
mΩ
• Super Logic Level (2.5 V rated)
ID
-6
A
• 150°C operating temperature
P-TSOP6-6
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
4
3
2
1
5
6
P-TSOP6-6
• Halogen free according to IEC61249221
Type
Package
Tape and reel
BSL207SP
P-TSOP6-6
H6327:3000 pcs/r. sPA
Drain
pin 1,2,
5,6
Gate
pin 3
Marking
Source
pin 4
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C
-6
TA=70°C
-4.8
ID puls
-24
EAS
44
mJ
dv/dt
-6
kV/µs
Gate source voltage
VGS
±12
V
Power dissipation
Ptot
2
W
-55... +150
°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID =-6 A , VDD=-10V, RGS =25Ω
Reverse diode dv/dt
IS =-6A, VDS=-16V, di/dt=200A/µs, Tjmax =150°C
TA=25°C
Tj , Tstg
Operating and storage temperature
55/150/56
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Class 1a
Page 1
2013-11-06
BSL207SP
Rev. 2.05
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
50
-
-
230
-
-
62.5
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
@ min. footprint
@ 6 cm 2 cooling area
1)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-20
-
-
VGS(th)
-0.6
-0.9
-1.2
Static Characteristics
Drain-source breakdown voltage
V
VGS =0, ID=-250µA
Gate threshold voltage, VGS = VDS
ID =-40µA
Zero gate voltage drain current
µA
IDSS
VDS =-20V, VGS =0, Tj =25°C
-
-0.1
-1
VDS =-20V, VGS =0, Tj =150°C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
43
65
mΩ
RDS(on)
-
29
41
Gate-source leakage current
VGS =-12V, VDS =0
Drain-source on-state resistance
VGS =-2.5V, ID =-4.9A
Drain-source on-state resistance
VGS =-4.5, ID =-6A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t ≤ 5 sec.
Page 2
2013-11-06
BSL207SP
Rev. 2.05
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
7
14
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS ≥2∗ID ∗RDS(on)max ,
ID =-4.8A
Input capacitance
Ciss
VGS =0, VDS =-15V,
-
1007
-
Output capacitance
Coss
f=1MHz
-
410
-
Reverse transfer capacitance
Crss
-
332
-
Turn-on delay time
td(on)
VDD =-10V, VGS =-4.5V,
-
9
14
Rise time
tr
ID =-1A, RG=6Ω
-
17
26
Turn-off delay time
td(off)
-
42
63
Fall time
tf
-
53
76
-
-1.7
-2.6
-
-7.1
-10.7
-
-13.3
-20
V(plateau) VDD =-10V, ID =-6A
-
-1.6
-
V
IS
-
-
-2.3
A
-
-
-24
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =-10V, ID =-6A
VDD =-10V, ID =-6A,
nC
VGS =0 to -4.5V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0, |IF | = |ID |
-
-0.9
-1.3
V
Reverse recovery time
trr
VR =-10V, |IF | = |lD |,
-
29
36
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
12
15
nC
Page 3
2013-11-06
BSL207SP
Rev. 2.05
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA )
parameter: |VGS |≥ 4.5 V
2.2
BSL207SP
-6.5
BSL207SP
A
W
-5.5
1.8
-5
-4.5
1.4
ID
Ptot
1.6
-4
1.2
-3.5
1
-3
-2.5
0.8
-2
0.6
-1.5
0.4
-1
0.2
0
0
-0.5
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TA
4 Transient thermal impedance
ID = f ( VDS )
ZthJS = f (tp )
parameter : D = 0 , TA = 25 °C
parameter : D = tp /T
2 BSL207SP
10 2
=
-10 1
R
(o
DS
V
BSL207SP
K/W
/I D
A
160
TA
3 Safe operating area
-10
°C
DS
tp = 130.0µs
10 1
n)
ID
Z thJS
1 ms
10 0
10 ms
-10 0
10 -1
D = 0.50
0.20
10
-2
0.10
0.05
-10 -1
DC
0.02
10 -3
0.01
single pulse
-10 -2 -1
-10
-10
0
-10
1
V
-10
2
VDS
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Page 4
2013-11-06
BSL207SP
Rev. 2.05
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
60
0.065
A
Vgs = -3.5V
Vgs = -2V
Vgs = -3V
50
0.055
RDS(on)
45
- ID
Vgs = -2.2V
Ω
Vgs = -4V
Vgs = -4.5V
Vgs = -6V
Vgs = -10V
40
35
Vgs = -2.5V
Vgs= - 3V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 6V
Vgs= - 8V
0.05
0.045
0.04
30
0.035
Vgs = -2.5V
25
0.03
20
0.025
15
0.02
Vgs = -2V
10
Vgs = - 10V
0.015
5
0
0
1
2
3
4
5
6
7
8
V
0.01
0
10
4
8
12
16
20
24
- V DS
A
30
- ID
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
parameter: tp = 80 µs
20
22
A
S
18
g fs
- ID
16
14
12
12
10
8
8
6
4
4
2
0
0
0.5
1
1.5
2
V
0
0
3
- V GS
4
8
12
16
A
24
- ID
Page 5
2013-11-06
BSL207SP
Rev. 2.05
9 Drain-source on-resistance
10 Gate threshold voltage
RDS(on) = f(Tj )
VGS(th) = f (Tj)
parameter: ID = -6 A, VGS = -4.5 V
parameter: VGS = VDS , ID = -40 µA
55
1.4
V
98%
- VGS(th)
RDS(on)
mΩ
45
40
98%
1
0.8
typ.
35
0.6
typ.
2%
30
0.4
25
0.2
20
-60
-20
20
60
100
°C
0
-60
160
-20
20
60
100
Tj
°C
160
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
-10 2
BSL207SP
A
pF
C
IF
-10 1
Ciss
10
3
Coss
-10 0
Tj = 25 °C typ
Tj = 150 °C typ
Crss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 2
0
5
10
V
20
- VDS
-10 -1
0
-0.4
-0.8
-1.2
-1.6
-2
-2.4 V
-3
VSD
Page 6
2013-11-06
BSL207SP
Rev. 2.05
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj ), par.: ID = -6 A
|VGS| = f (QGate )
VDD = -10 V, RGS = 25 Ω
parameter: ID = -6 A pulsed
45
12
V
mJ
10
9
- VGS
E AS
35
30
8
7
25
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
6
20
5
15
4
3
10
2
5
1
0
25
50
75
100
°C
150
Tj
0
0
4
8
12
16
20
nC
28
|QGate|
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
-24.5
BSL207SP
V
V (BR)DSS
-23.5
-23
-22.5
-22
-21.5
-21
-20.5
-20
-19.5
-19
-18.5
-18
-60
-20
20
60
100
°C
180
Tj
Page 7
2013-11-06
Rev. 2.05
Page 8
BSL207SP
2013-11-06