BSL302SNL6327HTSA1

BSL302SN OptiMOS®2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 30 V VGS=10 V 25 mW VGS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant 6 • Qualified according to AEC Q101 5 4 • Halogen free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information BSL302SN PG-TSOP-6 H6327 = 3000 pcs. / reel 3 Marking Lead Free Packing sPE Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 7.1 T A=70 °C 5.7 Unit A Pulsed drain current I D,pulse T A=25 °C 28 Avalanche energy, single pulse E AS I D=7.1 A, R GS=25 W 30 mJ Reverse diode dv /dt dv /dt I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114-HBM Soldering Temperature V 2 W -55 ... 150 °C 0 (0V to 250V) 260 °C IEC climatic category; DIN IEC 68-1 2.0 ±20 55/150/56 page 1 2014-01-09 BSL302SN Parameter Values Symbol Conditions Unit min. typ. max. - - 50 minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 Thermal characteristics Thermal resistance, junction - minimal footprint R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 30 - - Gate threshold voltage V GS(th) V DS=VGS, I D=30 µA 1.2 1.70 2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V mA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=5.7 A - 27 38 mW V GS=10 V, I D=7.1 A - 18 25 16 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.1 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) 2.0 page 2 2014-01-09 BSL302SN Parameter Values Symbol Conditions Unit min. typ. max. - 564 750 - 202 269 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 28 43 Turn-on delay time t d(on) - 6.4 - Rise time tr - 2.8 - Turn-off delay time t d(off) - 13.7 - Fall time tf - 1.9 - Gate to source charge Q gs - 1.78 2.37 Gate to drain charge Q gd - 1.2 1.8 Gate charge total Qg - 4.4 6.6 Gate plateau voltage V plateau - 3.2 - V - - 2.5 A - - 28 - 0.8 1.2 - 14.2 - 5.1 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=7.1 A, R G,ext=1.6 W pF ns Gate Charge Characteristics V DD=15 V, I D=7.1 A, V GS=0 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 2.0 T A=25 °C V GS=0 V, I F=7.1 A, T j=25 °C V R=15 V, I F=7.1 A, di F/dt =100 A/µs page 3 V ns - nC 2014-01-09 BSL302SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 8 2 7 6 1.6 1.2 ID [A] Ptot [W] 5 4 3 0.8 2 0.4 1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 102 limited by on-state resistance 1 µs 10 µs 0.5 100 µs 101 0.2 10 ms 101 1 ms 0.1 DC ID [A] ZthJA [K/W] 100 10-1 0.05 0.02 100 0.01 10-2 single pulse 10-3 10-1 10-2 10-1 100 101 102 VDS [V] 2.0 10-5 10-4 10-3 10-2 10-1 100 101 tp [s] page 4 2014-01-09 BSL302SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 60 10 V 28 7V 26 50 24 4.5 V 4V 22 3.5 V 40 RDS(on) [mW] 20 ID [A] 18 16 3.7 V 14 12 3.5 V 10 3.7 V 4V 30 4.5 V 7V 10 V 20 8 6 10 4 3V 2 2.7 V 0 0 0 1 2 3 0 4 8 VDS [V] 12 16 ID [A] 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 8 20 7 6 15 gfs [S] ID [A] 5 4 25 °C 10 3 150 °C 2 5 1 0 0 0 1 2 3 4 5 VGS [V] 2.0 0 1 2 3 4 5 6 7 8 ID [A] page 5 2014-01-09 BSL302SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=7.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D 50 2.8 2.4 40 30 VGS(th) [V] RDS(on) [mW] 2 98 % 20 typ 98 % 1.6 typ 1.2 2% 0.8 10 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 Tj [°C] Tj [°C] 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 104 102 101 103 100 IF [A] C [pF] Ciss Coss 25 °C 10-1 150 °C, 98% 102 150 °C Crss 101 10-3 0 5 10 15 20 VDS [V] 2.0 25 °C, 98% 10-2 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2014-01-09 BSL302SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=7.1 A pulsed parameter: T j(start) parameter: V DD 101 10 9 25 °C 8 100 °C 125 °C 24 V 7 VGS [V] IAV [A] 6 100 15 V 5 6V 4 3 2 1 10-1 0 100 101 102 0 103 2 tAV [µs] 4 6 8 10 Qgate [nC] 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 36 V GS 35 Qg 34 VBR(DSS) [V] 33 32 31 V gs(th) 30 29 28 Q g(th) Q sw 27 Q gs 26 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] 2.0 page 7 2014-01-09 BSL302SN Package Outline: TSOP6 Footprint: Packaging: Dimensions in mm 2.0 page 8 2014-01-09 BSL302SN Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user 2.0 page 9 2014-01-09