BSL303SPEH6327XTSA1

Mosfet MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,-30V BSL303SPE DataSheet Rev.2.0 Final Industrial&Multimarket BSL303SPE OptiMOS™-P 3 Small-Signal-Transistor Features Product Summary VDS • P-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) -30 V VGS=-10 V 33 m VGS=-4.5 V 52 ID -6.3 A • ESD protected • Avalanche rated PG-TSOP-6 • Qualified according to AEC Q101 6 5 • 100% Lead-free; RoHS compliant, halogen free 1 Type Package Tape and Reel Information BSL303SPE PG-TSOP-6 H6327: 3000 pcs/ reel 2 4 3 Marking Hal. Free Packing sPV Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -6.3 T A=70 °C -5.0 Pulsed drain current I D,pulse T A=25 °C -25.2 Avalanche energy, single pulse E AS I D=-6.3A, R GS=25  30.0 Reverse diode dv /dt dv /dt I D=-6.3 A, V DS=-15 V, di /dt =100 A/µs, T j,max=150 °C Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.0 page 1 6 Unit A mJ kV/µs ±20 V 2.0 W -55 ... 150 °C 2 (2KV to 4kV) V 260 °C °C 55/150/56 °C 2014-11-18 BSL303SPE Parameter Values Symbol Conditions Unit min. typ. max. - - 50 minimal footprint - - 230 6 cm2 cooling area1) - - 62.5 Thermal characteristics Thermal resistance, junction - minimal footprint R thJS SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=0V, I D=-30µA -2 -1.5 -1 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -0.1 V DS=-30V, V GS=0V, T j=150 °C - - -20 V A Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -7 μA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-5 A - 35 52 m V GS=-10 V, I D=-6.3 A - 25 33 12.9 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-5 A S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.0 page 2 2014-11-18 BSL303SPE Parameter Values Symbol Conditions Unit min. typ. max. - 1053 1401 - 482 641 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 33 50 Turn-on delay time t d(on) - 8.0 12 Rise time tr - 7.7 12 Turn-off delay time t d(off) - 23.7 36 Fall time tf - 8.3 12 Gate to source charge Q gs - 3.3 4.4 Gate to drain charge Q gd - 1.6 2.4 Gate charge total Qg - 14.0 20.9 Gate plateau voltage V plateau - 3.1 - V - - -6.3 A - - -25.2 - -0.9 -1.1 V - 33 49 ns - 28 43 nC V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-6.3 A, R G,ext=6  pF ns Gate Charge Characteristics2) V DD=-15 V, I D=-6.3 A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr 2) T A=25 °C V GS=0 V, I F=-6.3 A, T j=25 °C V R=-15 V, I F=-6.3 A, di F/dt =100 A/µs Defined by design.Not subjected to production test Rev 2.0 page 3 2014-11-18 BSL303SPE 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS ≤ -10 V 6.5 2.5 6 5.5 2 5 4.5 4 ID [A] Ptot [W] 1.5 1 3.5 3 2.5 2 1.5 0.5 1 0.5 0 0 0 40 80 0 120 20 40 60 TA [°C] 80 100 120 140 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 102 0.5 10 µs 0.2 100 µs 101 0.1 1 ms 0.05 101 0.02 100 ZthJA [K/W] ID [A] 10 ms DC 10-1 0.01 single pulse 100 10-2 10-3 10-1 10-2 10-1 100 101 102 VDS [V] Rev 2.0 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-11-18 BSL303SPE 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 130 10 4V 120 4.5 V 3.5 V 110 10 V 8 3.3 V 100 90 ID [A] RDS(on) [m] 6 4 3V 3V 80 70 3.3 V 60 3.5 V 50 4V 40 4.5 V 30 2 2.8 V 10 V 20 10 0 0 0 1 2 0 3 2 4 VDS [V] 6 8 10 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 20 4 15 3 150 °C gfs [S] ID [A] 25 °C 2 5 1 0 0 0 1 2 3 4 VGS [V] Rev 2.0 10 0 2 4 6 8 ID [A] page 5 2014-11-18 BSL303SPE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-6.3 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-30 µA parameter: I D 60 2.8 2.4 50 2 98 % 98 % VGS(th) [V] RDS(on) [m] 40 30 typ 1.6 typ 1.2 2% 20 0.8 10 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 104 102 101 Ciss 103 Coss 150 °C, 98% IF [A] C [pF] 100 25 °C 10-1 25 °C, 98% 102 150 °C Crss 10-2 101 10-3 0 5 10 15 20 VDS [V] Rev 2.0 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2014-11-18 BSL303SPE 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25  V GS=f(Q gate); I D=-6.3 A pulsed parameter: T j(start) parameter: V DD 101 10 8 25 °C VGS [V] IAV [A] 6 100 °C 100 15 V 6V 24 V 4 125 °C 2 10-1 0 100 101 102 0 103 2 tAV [µs] 4 6 8 10 12 14 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 32 V GS Qg VBR(DSS) [V] 31 30 V g s(th) 29 Q g (th) Q sw Q gs 28 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 2.0 page 7 2014-11-18 BSL303SPE Package Outline: TSOP-6 2.9 ±0.2 (2.25) 1.1 MAX. B 0.1 MAX. 1 2 3 0.35 +0.1 -0.05 0.2 M B 6x 0.15 +0.1 -0.06 0.95 0.2 1.9 M 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 10˚ MAX. (0.35) A A GPX09300 Footprint: Packaging: 0.5 0.2 2.7 8 2.9 1.9 4 0.95 Remark: Wave soldering possible dep. on customers process conditions Pin 1 marking 3.15 HLG09283 1.15 CPWG5899 Dimensions in mm Note: For symmetric types there is no defined Pin 1 orientation in the reel. Rev 2.0 page 8 2014-11-18 BSL303SPE RevisionHistory BSL303SPE Revision:2014-12-10,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-12-10 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.0,2014-12-10