BSL372SNH6327XTSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL372SN DataSheet Rev.2.0 Final Industrial&Multimarket BSL372SN OptiMOS™ Small-Signal-Transistor Product Summary Features 100 V VGS=10 V 0.22 Ω VGS=4.5 V 0.26 VDS • N-channel RDS(on),max • Enhancement mode • Logic Level (4.5V rated) 2 ID A • Avalanche rated • Qualified according to AEC Q101 PG-TSOP6 • RoHS compliant 6 • Halogen-free according to IEC61249-2-21 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen Free Packing BSL372SN TSOP-6 H6327: 3000 pcs/ reel sPX Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.0 T A=70 °C 1.6 Unit A Pulsed drain current I D,pulse T A=25 °C 8.0 Avalanche energy, single pulse E AS I D=2 A, R GS=25 Ω 33 mJ Reverse diode dv /dt dv /dt I D=2 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 2.0 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=1.6 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.0 page 2 2014-10-16 BSL372SN Parameter Values Symbol Conditions Unit min. typ. max. - 247 329 - 40 54 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 19 28 Turn-on delay time t d(on) - 3.5 5.2 Rise time tr - 4.8 7.3 Turn-off delay time t d(off) - 54.0 81.0 Fall time tf - 22.1 33.2 Gate to source charge Q gs - 0.6 0.8 Gate to drain charge Q gd - 3.0 4.5 Gate charge total Qg - 9.5 14.3 Gate p plateau voltage g V plateau - 2.3 - V - - 2.0 A - - 8.0 - 0.8 1.1 V - 41 62 ns - 47 71 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=2 A, R G,ext=6 Ω pF ns Gate Charge Characteristics2) V DD=50 V, I D=2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr 2) T A=25 °C V GS=0 V, I F=2 A, T j=25 °C V R=50 V, I F=2 A, di F/dt =100 A/µs Defined by design. Not subjected to production test Rev 2.0 page 3 2014-10-16 BSL372SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2.5 2 2 1.5 1.5 ID [A] Ptot [W] 2.5 1 1 0.5 0.5 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 1 µs 10 µs 100 µs 0.5 1 ms 100 10 ms ZthJA [K/W] ID [A] 0.2 10-1 5s 0.1 101 0.05 0.02 10-2 0.01 single pulse 10-3 100 10-1 100 101 102 103 VDS [V] Rev 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-10-16 BSL372SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 800 7 10 V 700 5V 3V 6 600 2.5 V 2.8 V 500 RDS(on) [mΩ] ID [A] 5 4 400 2.5 V 3 300 2 200 1 100 3V 4V 10 V 2V 0 0 0 2 4 6 0 1 2 3 VDS [V] 4 5 6 7 8 6 7 8 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 11 8 10 7 25 °C 150 °C 9 6 8 7 gfs [S] ID [A] 5 4 3 6 5 4 3 2 2 1 1 0 0 0 1 2 3 4 VGS [V] Rev 2.0 0 1 2 3 4 5 ID [A] page 5 2014-10-16 BSL372SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=218 µA parameter: I D 600 2.5 500 2 1.5 VGS(th) [V] RDS(on) [mΩ] 400 300 max max typ 1 200 typ min 0.5 100 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C Ciss 150 °C 100 Coss Crss 101 10-1 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 25 °C, 98% IF [A] C [pF] 102 150 °C, 98% 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] page 6 2014-10-16 BSL372SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=2 A pulsed parameter: T j(start) parameter: V DD 50 V 101 10 9 20 V 80 V 8 7 100 °C 6 25 °C VGS [V] IAV [A] 125 °C 100 5 4 3 2 1 0 10-1 100 101 102 0 103 1 2 3 4 5 6 7 8 9 10 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 VBR(DSS) [V] 108 104 100 V g s(th) 96 92 88 Q g (th) Q sw 84 Q gs 80 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.0 page 7 2014-10-16 BSL372SN TSOP6 Note: For symmetric types there is no defined Pin 1 orientation in the reel. Rev 2.0 page 8 2014-10-16 BSL372SN RevisionHistory BSL372SN Revision:2014-10-22,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-22 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2014-10-22