BSM15GD120DN2

BSM 15 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 15 GD 120 DN2 BSM 15 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 145 + 150 -40 ... + 125 ≤ 0.86 ≤ 1.5 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 50 30 W VGE IC 25 15 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2504-A67 C67070-A2504-A67 1200V 25A 1200V 25A 1 Oct-20-1997 BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 0.6 mA Collector-emitter saturation voltage VGE = 15 V, IC = 15 A, Tj = 25 °C VGE = 15 V, IC = 15 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 15 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Crss 70 Coss 150 Ciss 1000 gfs 5.5 pF S IGES 150 ICES 0.3 1.2 0.5 nA VCE(sat) 2.5 3.1 3 3.7 mA VGE(th) 4.5 5.5 6.5 V Values typ. max. Unit 2 Oct-20-1997 BSM 15 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Rise time VCC = 600 V, VGE = 15 V, IC = 15 A RGon = 82 Ω Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Fall time VCC = 600 V, VGE = -15 V, IC = 15 A RGoff = 82 Ω Free-Wheel Diode Diode forward voltage IF = 15 A, VGE = 0 V, Tj = 25 °C IF = 15 A, VGE = 0 V, Tj = 125 °C Reverse recovery time IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge IF = 15 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C 1 3 Qrr 0.1 µC trr VF 2.4 1.9 2.9 µs V 70 100 tf 400 600 td(off) 45 90 tr 55 110 td(on) ns Values typ. max. Unit 3 Oct-20-1997 BSM 15 GD 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 150 W 130 Ptot 120 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 160 Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 2 t = 11.0µs p A IC 10 1 100 µs 10 0 1 ms 10 ms 10 -1 0 10 10 1 10 2 DC 3 10 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 26 A 22 IC 20 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 °C 160 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 IGBT K/W ZthJC 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp 4 Oct-20-1997 BSM 15 GD 120 DN2 Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 V VCE 5 17V 15V 13V 11V 9V 7V Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 V VCE 5 17V 15V 13V 11V 9V 7V Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 30 A 26 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 15 GD 120 DN2 Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 15 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 10 -1 6 4 2 0 0 10 20 30 40 50 60 70 80 nC 100 10 -2 0 5 10 15 20 25 30 V VCE 40 Coss Crss 600 V 800 V C 10 0 Ciss QGate Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 Short circuit safe operating area ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE 6 Oct-20-1997 BSM 15 GD 120 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω 10 3 Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A 10 3 tdoff t ns tdoff t ns tdon 10 2 tr tdon tf tf 10 2 tr 10 1 0 5 10 15 20 25 30 A IC 40 10 1 0 50 100 150 200 Ω 300 RG Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 82 Ω 10 mWs E 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 A IC 40 Eon Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 15 A 10 mWs E 8 7 6 5 4 3 2 1 0 0 50 100 150 200 Eoff Eon Eoff Ω 300 RG 7 Oct-20-1997 BSM 15 GD 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 30 A 26 IF 24 22 20 18 16 14 12 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 V VF 3.0 Tj=125°C Tj=25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W 10 0 Diode ZthJC 10 -1 D = 0.50 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -3 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 15 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 9 Oct-20-1997