BSO203P

BSO203P OptiMOS -P Power-Transistor TM Product Summary Feature • P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO203P P-SO 8 V RDS(on) 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package -20 ID • Super Logic Level (2.5 V rated) Type VDS A SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -8.2 TA=70°C -6.6 ID puls Pulsed drain current Unit -32.8 TA=25°C EAS 97 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2 W -55... +150 °C Avalanche energy, single pulse ID =-8.2 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-8.2A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 55/150/56 Page 1 2002-01-08 BSO203P Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 50 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-100µA IDSS Zero gate voltage drain current µA VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 26 35 mΩ RDS(on) - 18.6 21 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-6.4A Drain-source on-state resistance VGS =-4.5, ID =-8.2A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Page 2 2002-01-08 BSO203P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 17 34 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-6.6A Input capacitance Ciss VGS =0, VDS =-15V, - 2242 - Output capacitance Coss f=1MHz - 852 - Reverse transfer capacitance Crss - 690 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 15.5 23.2 Rise time tr ID =-1A, RG=6Ω - 25.9 38.9 Turn-off delay time td(off) - 59 88.5 Fall time tf - 63.3 95 - -3.5 -5.2 - -15.1 -22.6 - -32.4 -48.6 V(plateau) VDD =-15V, ID =-8.2A - -1.6 - V IS - - -2.5 A - - -32.8 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-15V, ID =-8.2A VDD =-15V, ID =-8.2A, nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=8.2A - 0.85 1.3 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 35.7 44.6 ns Reverse recovery charge Qrr diF /dt=100A/µs - 18.7 23.4 nC Rev.1.2 Page 3 2002-01-08 BSO203P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 2.2 BSO203P -10 W A 1.8 -8 1.6 -7 1.4 ID Ptot BSO203P -6 1.2 -5 1 -4 0.8 -3 0.6 -2 0.4 -1 0.2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C -10 parameter : D = tp /T /I D = A S( o V 160 TA 3 Safe operating area 2 BSO203P °C 10 2 DS BSO203P K/W tp = 120.0µs n) RD 10 1 Z thJS 1 ms -10 1 ID 10 ms -10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 DC 0.02 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev.1.2 Page 4 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-01-08 BSO203P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.03 90 Vgs = -2.5V A Vgs = -3.5V Ω Vgs = -3V Vgs = -3V RDS(on) - ID 70 60 Vgs = -4V Vgs = -4.5V Vgs = -6V Vgs = -10V 50 0.02 Vgs = -3.5V 0.015 Vgs = -2.5V 40 0.01 30 20 Vgs = -4V Vgs = -4.5V Vgs = -5V Vgs = -6V Vgs = -8V Vgs = -10V Vgs = -2V 0.005 10 0 0 2 4 6 0 0 10 V 5 10 15 20 25 30 35 40 A 50 - ID - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 35 60 A S - ID g fs 25 40 20 30 15 20 10 10 5 0 0 0.5 1 1.5 2 V 0 0 3 - V GS Rev.1.2 5 10 15 20 25 35 A - ID Page 5 2002-01-08 BSO203P 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -8.2 A, VGS = -4.5 V parameter: VGS = VDS , ID = -100 µA 30 1.4 mΩ V 98% - VGS(th) RDS(on) 26 24 1 98% 0.8 22 20 typ. typ. 0.6 18 0.4 2% 16 0.2 14 12 -60 -20 20 60 100 0 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO203P A pF C iss C IF -10 1 Coss 10 3 C rss -10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 V 15 - V DS Rev.1.2 -10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2002-01-08 BSO203P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -8.2 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -8.2 A pulsed 100 12 V mJ 10 80 - VGS E AS 9 70 60 8 7 50 6 40 5 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 4 30 3 20 2 10 1 0 25 50 75 100 150 °C Tj 0 0 10 20 30 40 nC 60 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO203P V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev.1.2 Page 7 2002-01-08 BSO203P Rev.1.2 Page 8 2002-01-08