BSO211PHXUMA1

BSO211P H OptiMOS® P-Power-Transistor Product Summary Features VDS • dual P-Channel in SO8 • Qualified according JEDEC for target applications • 150°C operating temperature RDS(on),max -20 V VGS=4.5 V 67 mW VGS=2.5 V 110 ID - 4.6 A • Super Logic Level (2.5V rated) • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-DSO-8 Type Package Marking Lead free Halogen free BSO211P H PG-DSO-8 211P Yes Yes Packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) ID steady state V GS=4.5 V, T A=25 °C -4,6 -4,0 V GS=4.5 V, T A=70 °C -3,7 -3,2 V GS=2.5 V, T A=25 °C -3,6 -3,2 V GS=2.5 V, T A=70 °C -2,9 -2,5 I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-4.6 A, R GS=25 W Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg T A=25 °C JESD22-A114 HBM A -18,4 28 mJ ±12 V 2,0 1,6 -55 ... 150 W °C 0 (0-250V) 260 Soldering temperature °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.1.3 Unit 10 secs Pulsed drain current2) ESD class Value Symbol Conditions page 1 2010-02-10 BSO211P H Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 62,5 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-0.25 mA -20 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-25 µA -0,6 -0.9 -1.2 Zero gate voltage drain current I DSS V DS=-20 V, V GS=0 V, T j=25 °C - - -1 V DS=-20 V, V GS=0 V, T j=150 °C - - -100 V µA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=-3.6 A - 74 110 mW V GS=4.5 V, I D=-4.6 A - 54 67 - 7,6 - W 8 13 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-4.6 A 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev.1.3 page 2 2010-02-10 BSO211P H Parameter Values Symbol Conditions Unit min. typ. max. - 730 1095 - 240 360 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 200 300 Turn-on delay time t d(on) - 9 12 Rise time tr - 13 20 Turn-off delay time t d(off) - 23 35 Fall time tf - 27 41 Gate to source charge Q gs - -1 -2 Gate charge at threshold Q g(th) - -1 -2 Gate to drain charge Q gd - -3 -4 Switching charge Q sw - -3 -4 Gate charge total Qg - -8 -10 Gate plateau voltage V plateau - -1,8 - V Output charge Q oss - 5 6 nC - - -2 A - - -18,4 V DD=15 V, V GS=4.5 V, I D=-4.6 A, R G=1.6 W ns Gate Charge Characteristics4) V DD=10 V, I D=-4.6 A, V GS=0 to 4.5 V V DD=10 V, V GS=0 V nC Reverse Diode Diode continuous forward current IS T A=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-4.6 A, T j=25 °C - - -1,4 Reverse recovery charge Q rr V R=10 V, I F=I D, di F/dt =100 A/µs - 8 12 4) V nC See figure 16 for gate charge parameter definition Rev.1.3 page 3 2010-02-10 BSO211P H 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); t p≤10 s parameter: V GS 3 5 2,5 4.5 V 4 ID [A] Ptot [W] 2 1,5 3 2 1 1 0,5 0 0 40 80 120 0 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C2); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 102 102 0.5 0.2 10 µs 101 0.1 100 µs 101 0.05 0.02 ID [A] ZthJA [K/W] 1 ms 10 ms 0.01 100 single pulse 100 limited by on-state resistance 10-1 DC 100 ms 10-1 10-2 10 s 10-1 100 101 102 VDS [V] Rev.1.3 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2010-02-10 BSO211P H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 100 4.5 V 3.5 V 90 35 4V 2.5 V 80 30 3V 70 RDS(on) [mW] ID [A] 25 20 2.5 V 15 3.0 V 3.5 V 60 4.0 V 4.5 V 5V 50 10 V 40 5V 30 10 2V 20 5 10 0 0 0 1 2 3 4 5 6 7 8 9 10 10 V 0 5 10 VDS [V] 15 20 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 20 24 18 22 20 16 18 14 16 150 °C 14 gfs [S] ID [A] 12 10 12 10 8 8 6 6 4 4 2 25 °C 2 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VGS [V] Rev.1.3 0 0 2 4 6 8 10 12 14 16 18 20 ID [A] page 5 2010-02-10 BSO211P H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-4.6 A; V GS=-4.5 V V GS(th)=f(T j); V GS=V DS; I D=-25 µA 100 1,6 90 1,4 1,2 80 98 % RDS(on) [mW] 1 VGS(th) [V] 70 60 0,8 0,6 typ 50 0,4 40 0,2 30 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 102 Ciss IF [A] C [pF] 101 150 °C 150°C 98% Coss 100 25 °C Crss 25 °C 98% 102 10-1 0 10 20 30 VDS [V] Rev.1.3 0 0,5 1 1,5 2 VSD [V] page 6 2010-02-10 BSO211P H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-4.6 A pulsed parameter: T j(start) parameter: V DD 101 10 9 25 °C 8 4V 100 °C 7 10 V 125 °C 16 V VGS [V] 6 100 5 IAV [A] 4 3 2 1 0 0 10-1 100 tAV [µs] 101 102 4 12 16 Qgate [nC] 103 15 Drain-source breakdown voltage 8 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 23 V GS 22,5 Qg 22 VBR(DSS) [V] 21,5 21 20,5 V gs(th) 20 19,5 19 Q g(th) Q sw 18,5 Q gs 18 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev.1.3 page 7 2010-02-10 BSO211P H Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.3 page 8 2010-02-10 BSO211P H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.3 page 9 2010-02-10