BSO215C

Preliminary data BSO 215 C SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage • Drain-Source on-state Enhancement mode • Logic Level resistance • Avalanche rated Continuous drain current N P VDS 20 -20 V RDS(on) 0.1 0.1 Ω ID 3.7 -3.7 A • dv/dt rated Type Package Ordering Code BSO 215 C SO 8 Q67041-S4025 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value N Unit P ID Continuous drain current A T A = 25 °C 3.7 -3.7 T A = 70 °C 3 -3 14.8 -14.8 I D puls Pulsed drain current T A = 25 °C EAS Avalanche energy, single pulse I D = 3 A, V DD = 15 V, R GS = 25 Ω I D = -3.7 A , VDD = -15 V, R GS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C EAR mJ 26 - - 68 0.2 0.2 dv/dt kV/µs I S = 3 A, V DS = 16 V, di/dt = 200 A/µs 6 - I S = -2.7 A, V DS = -16 V, di/dt = -200 A/µs - 6 Gate source voltage VGS ±20 ±20 V Power dissipation Ptot 2 2 W T A = 25 °C T j , T stg Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55...+150 °C 55/150/56 Page 1 1999-09-22 Preliminary data BSO 215 C Termal Characteristics Parameter Symbol Values Unit min. typ. max. - - 40 - - 40 Dynamic Characteristics Thermal resistance, junction - soldering point N RthJS P K/W RthJA SMD version, device on PCB: @ min. footprint; t ≤ 10 sec. N - - 110 @ 6 cm 2 cooling area 1) ; t ≤ 10 sec. N - - 62.5 @ min. footprint; t ≤ 10 sec. P - - 100 @ 6 cm 2 cooling area 1) ; t ≤ 10 sec. P - - 62.5 Static Characteristics, at Tj = 25 °C, unless otherwise specified V(BR)DSS Drain- source breakdown voltage V VGS = 0 V, ID = 250 µA N 20 - - VGS = 0 V, ID = -250 µA P -20 - - Gate threshold voltage, VGS = VDS ID = 10 µA VGS(th) N 1.2 1.5 2 ID = -450 µA P -1 -1.5 -2 IDSS Zero gate voltage drain current µA VDS = 20 V, VGS = 0 V, Tj = 25 °C N - 0.1 1 VDS = 20 V, VGS = 0 V, Tj = 125 °C N - 10 100 VDS = -20 V, VGS = 0 V, Tj = 25 °C P - -0.1 -1 VDS = -20 V, VGS = 0 V, Tj = 125 °C P - -10 -100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V N - 10 100 VGS = -20 V, VDS = 0 V P - -10 -100 Ω RDS(on) Drain-Source on-state resistance VGS = 4.5 V, ID = 3 A N - 0.1 0.15 VGS = -4.5 V, ID = -3 A P - 0.1 0.15 Ω RDS(on) Drain-Source on-state resistance VGS = 10 V, ID = 3.7 A N - 0.05 0.1 VGS = -10 V , ID = -3.7 A P - 0.06 0.1 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-22 Preliminary data BSO 215 C Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics gfs Transconductance S VDS≥2 * I D * R DS(on)max, ID = 3 A N 2.1 4.4 - VVDS≥2 * I D * R DS(on)max, ID = -3 A P 2.6 5.2 - Ciss Input capacitance pF VGS = 0 V, V DS = 25 V, f = 1 MHz N - 197 246 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 380 475 Coss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 109 136 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 290 360 Crss Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 59 74 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 103 128 td(on) Turn-on delay time ns VDD = 10 V, VGS = 4.5 V, I D = 3 A, R G = 33 Ω N - 15 22.5 VDD = -10 , V GS = -4.5 V, ID = -3 A, R G = 13 Ω P - 24 36 tr Rise time VDD = 10 V, VGS = 4.5 V, I D = 3 A, R G = 33 Ω N - 88 132 VDD = -10 , V GS = -4.5 V, ID = -3 A, R G = 13 Ω P - 236 354 td(off) Turn-off delay time VDD = 10 V, VGS = 4.5 V, I D = 3 A, R G = 33 Ω N - 12.3 18.5 VDD = -10 , V GS = -4.5 V, ID = -3 A, R G = 13 Ω P - 87 130 tf Fall time VDD = 10 V, VGS = 4.5 V, I D = 3 A, R G = 33 Ω N - 17.1 25.7 VDD = -10 V, V GS = -4.5 V, I D = -3 A, R G = 13 Ω P - 168 252 Page 3 1999-09-22 Preliminary data BSO 215 C Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics Qgs Gate to source charge nC VDD = 16 , ID = 3.7 A N - 1.3 2 VDD = -16 , ID = -3.7 A P - 1.9 2.9 Qgd Gate to drain charge VDD = 16 , ID = 3.7 A N - 3 4.5 VDD = -16 , ID = -3.7 A P - 4.4 6.6 Qg Gate charge total VDD = 16 , ID = 3.7 A, VGS = 0 to 10V N - 7.7 11.5 VDD = -16 , ID = -3.7 A, VGS = 0 to -10V P - 13.2 19.8 V(plateau) Gate plateau voltage V VDD = 16 , ID = 3.7 A N - 3.5 - VDD = -16 , ID = -3.7 A P - 2.8 - Inverse diode continuous forward current N IS - - 3.7 T A = 25 °C P - - -3.7 Inverse diode direct current,pulsed N ISM - - 14.8 T A = 25 °C P - - -14.8 Reverse Diode VSD Inverse diode forward voltage V VGS = 0 V, I F = I S N - 0.84 1.1 VGS = 0 V, I F = I S P - -0.82 -1 trr Reverse recovery time ns VR = 10 V, IF=l S, di F/dt = 100 A/µs N - 46.5 70 VR = -10 V, IF=l S , diF/dt = -100 A/µs P - 137 205 Qrr Reverse recovery charge µC VR = 10 V, IF=l S , diF/dt = 100 A/µs N - 18.4 27.6 VR = -10 V, I F=lS, diF/dt = -100 A/µs P - 80 120 Page 4 A 1999-09-22 Preliminary data BSO 215 C Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) Ptot = f (TA) Ptot = f (TA ) BSO 215 C BSO 215 C 2.2 2.2 W 1.8 1.8 1.6 1.6 Ptot Ptot W 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 TA Drain current (P-Ch.) I D = f (T A) ID = f (TA) parameter: VGS≥ 10 V parameter: VGS ≥ -10 V BSO 215 C BSO 215 C 4.0 -4.0 A A 3.2 -3.2 2.8 -2.8 ID ID 160 TA Drain current (N-Ch.) 2.4 -2.4 2.0 -2.0 1.6 -1.6 1.2 -1.2 0.8 -0.8 0.4 -0.4 0.0 0 °C 20 40 60 80 100 120 °C 0.0 0 160 TA 20 40 60 80 100 120 °C 160 TA Page 5 1999-09-22 Preliminary data BSO 215 C Safe operating area (N-Ch.) Safe operating area (P-Ch.) I D = f ( VDS ) ID = f ( VDS ) parameter : D = 0 , T A = 25 °C parameter : D = 0 , TA = 25 °C 10 2 BSO 215 C -10 2 BSO 215 C A A /I D 10 1 = n) RD 1 ms 10 ms 10 0 10 -1 10 0 10 S( 100 µs ) on 1 ms 10 ms -10 -1 1 tp = 86.0µs -10 0 DC 10 -2 -1 10 = -10 1 100 µs VD S ID (o S ID R DS VD /I D tp = 57.0µs V 10 DC -10 -2 -1 -10 2 -10 0 -10 1 V VDS -10 VDS Transient thermal impedance (N-Ch.) Transient thermal impedance (P-Ch.) Z thJC = f(t p) ZthJC = f(tp) parameter : D = tp/T parameter : D = tp /T 10 2 2 BSO 215 C 10 2 BSO 215 C K/W K/W Z thJC Z thJC 10 1 10 1 10 0 10 D = 0.50 D = 0.50 0.20 0.20 0 0.10 0.05 single pulse 10 -1 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 0.10 single pulse 0.05 10 -1 0.02 0.02 0.01 0.01 s 10 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 3 tp s 10 4 tp Page 6 1999-09-22 Preliminary data BSO 215 C Typ. output characteristics (N-Ch.) Typ. output characteristics (P-Ch.) I D = f (VDS) ID = f (VDS ) parameter: tp = 80 µs parameter: tp = 80 µs BSO 215 C 10 BSO 215 C -10 Ptot = 2.00W A Ptot = 2.00W A VGS [V] a 2.5 j i ID 7 h 6 g 5 4 b 2.7 c 3.0 d 3.2 e 3.5 f 3.7 g 4.0 h 4.2 i 4.5 j 5.0 -8 g f -7 ID 8 VGS [V] a -2.5 e -6 b -2.7 c -3.0 d -3.2 e -3.5 f -3.7 g -4.0 -5 d -4 f 3 -3 c e 2 -2 b d 1 -1 c ab 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V a 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 5.0 VDS -5.0 VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) RDS(on) = f (ID ) parameter: VGS parameter: VGS BSO 215 C BSO 215 C 0.32 0.32 e f g h b Ω Ω 0.24 0.24 RDS(on) RDS(on) d 0.20 c d e 0.20 0.16 0.16 0.12 0.12 f 0.08 0.08 i g j 0.04 VGS [V] = d 3.2 0.00 0.0 e f 3.5 3.7 1.0 0.04 VGS [V] = g 4.0 2.0 h i 4.2 4.5 j 5.0 3.0 4.0 b c d e f -2.7 -3.0 -3.2 -3.5 -3.7 5.0 A 0.00 0.0 7.0 ID -1.0 -2.0 -3.0 g -4.0 -4.0 -5.0 °C -7.0 Tj Page 7 1999-09-22 Preliminary data BSO 215 C Typ. transfer characteristics (N-Ch.) Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs I D = f (VGS), V DS ≥ 2 x I D x R DS(on)max parameter: tp = 80 µs ID = f (VGS ), VDS ≥ 2 x ID x RDS(on)max 10 -10 A 8 -8 7 -7 ID ID A 6 -6 5 -5 4 -4 3 -3 2 -2 1 -1 0 0 1 2 3 4 5 VGS 0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 7 -5.0 VGS V Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 °C gfs = f(ID); Tj = 25 °C parameter: g fs parameter: gfs 10 7.0 S S 6.0 8 5.5 7 4.5 gfs gfs 5.0 6 4.0 5 3.5 3.0 4 2.5 2.0 3 1.5 2 1.0 1 0.5 0.0 0 1 2 3 4 5 6 7 8 0 0 A 10 ID Page 8 -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID 1999-09-22 Preliminary data BSO 215 C Drain-source on-resistance (N-Ch.) Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) RDS(on) = f (Tj) parameter : I D = 3.7 A , VGS = 10 V parameter : ID = -3.7 A , VGS = -10 V BSO 215 C BSO 215 C 0.26 0.19 Ω Ω 0.22 0.16 RDS(on) RDS(on) 0.20 0.18 0.16 0.14 0.14 0.12 98% 0.10 98% 0.12 0.08 0.10 typ 0.06 0.08 typ 0.06 0.04 0.04 0.02 0.02 0.00 -60 -20 20 60 100 °C 0.00 -60 180 -20 20 60 °C 100 Tj 180 Tj Gate threshold voltage (N-Ch.) Gate threshold voltage (P-Ch.) VGS(th) = f (T j) VGS(th) = f (Tj) parameter: VGS = VDS, ID = 10 µA parameter: VGS = VDS , ID = -450 µA 3.0 -3.0 V V 2.2 V GS(th) V GS(th) 2.5 98% 2.0 1.8 98% -2.0 typ typ 1.5 -1.5 1.2 2% 1.0 2% -1.0 0.8 0.5 -0.5 0.2 0.0 -60 -20 20 60 100 0.0 -60 160 °C Tj Page 9 -20 20 60 100 160 °C Tj 1999-09-22 Preliminary data BSO 215 C Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) C = f(VDS) C = f(VDS ) parameter: VGS=0 V, f=1 MHz parameter: VGS =0 V, f=1 MHz 10 3 10 4 pF pF 10 3 C C Ciss Ciss Coss 10 2 Coss Crss Crss 10 2 10 1 0 5 10 V 15 10 1 0 25 -5 -10 -15 -25 V VDS VDS Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs parameter: Tj , tp = 80 µs 10 1 BSO 215 C -10 1 BSO 215 C A A IF -10 0 IF 10 0 10 -1 10 -2 0.0 -10 -1 0.4 0.8 Tj = 25 °C typ Tj = 25 °C typ Tj = 150 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 25 °C (98%) Tj = 150 °C (98%) Tj = 150 °C (98%) 1.2 1.6 2.0 2.4 V 3.0 -10 -2 0.0 VSD -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 10 1999-09-22 Preliminary data BSO 215 C Avalanche Energy EAS = f (Tj) (N-Ch.) Avalanche Energy EAS = f (Tj ) parameter: ID = 3 A, VDD = 15 V RGS = 25 Ω parameter: ID = -3.7 A , VDD = -15 V RGS = 25 Ω 70 30 mJ mJ E AS E AS 50 20 40 15 30 10 20 5 10 0 25 45 65 85 105 125 0 25 165 °C 45 65 85 105 125 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3.7 A VGS = f (QGate) parameter: ID = -3.7 A BSO 215 C BSO 215 C 16 -16 V V -12 VGS 12 VGS 165 °C 10 8 -10 -8 0,2 VDS max 0,8 VDS max 6 -6 4 -4 2 -2 0 0 2 4 6 8 nC 0 0 12 QGate 0,2 VDS max 2 4 6 8 0,8 VDS max 10 12 14 16 nC 19 QGate Page 11 1999-09-22 Preliminary data BSO 215 C Drain-source breakdown voltage Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) V(BR)DSS = f (Tj ) BSO 215 C -24.5 V V 23.5 -23.5 23.0 -23.0 V(BR)DSS V(BR)DSS BSO 215 C 24.5 22.5 22.0 -22.5 -22.0 21.5 -21.5 21.0 -21.0 20.5 -20.5 20.0 -20.0 19.5 -19.5 19.0 -19.0 18.5 -18.5 18.0 -60 -20 20 60 100 °C 180 -18.0 -60 Tj -20 20 60 100 °C 180 Tj Page 12 1999-09-22 Preliminary data BSO 215 C Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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