BSO303PHXUMA1

BSO303P H OptiMOS®-P Small-Signal-Transistor Product Summary Features VDS • Dual P-Channel in SO8 RDS(on),max • Enhancement mode • Logic level -30 V VGS=-10V 21 mW VGS=-4.5V 32 ID -8.2 A • 150°C operating temperature • Qualified according JEDEC for target applications SO 8 • Halogen-free according to IEC61249-2-21 • Pb-free lead plating; RoHS compliant Type Package BSO303P H PG-DSO- 8 Marking 303P Lead free Halogen free Yes Packing Yes dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) ID steady state T C=25 °C -8,2 -7,0 T C=70 °C -6,6 -5,8 I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-8.2 A, R GS=25 W Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C JESD22-A114 HBM A -32,8 97 mJ ±20 V 2 W -55 ... 150 °C 1B (500V - 1kV) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.3 Unit 10 secs Pulsed drain current2) ESD class Value Symbol Conditions page 1 2010-02-10 BSO303P H Parameter Values Symbol Conditions Unit min. typ. max. - - 50 Thermal characteristics Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA minimal footprint, t< 10s 110 minimal footprint, steady state 150 K/W 6 cm2 cooling area1) t2|I D|R DS(on)max, I D=-6.6 A 11 27 - Transconductance g fs S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t≤10 sec. 2.) See figure3 for more detailed information Rev. 1.3 page 2 2010-02-10 BSO303P H Parameter Values Symbol Conditions Unit min. typ. max. - 1785 2678 - 510 765 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 425 638 Turn-on delay time t d(on) - 11 17 Rise time tr - 13 20 Turn-off delay time t d(off) - 55 83 Fall time tf - 39 59 Gate to source charge Q gs - -5 -6 Gate to drain charge Q gd - -14 -20 Gate charge total Qg - -36 -49 Gate plateau voltage V plateau - -2,7 - V - - -2,2 A - - -32,8 V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-1 A, R G=6 W pF ns Gate Charge Characteristics3) V DD=-24 V, I D=-8.2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS T C=25 °C Diode direct current, pulsed I SM Diode forward voltage V SD V GS=0 V, I F=-8.2 A, T j=25 °C - -0,9 -1,3 V Reverse recovery time t rr V R=-15 V, I F=|I S|, di F/dt =100 A/µs - 24 36 ns Reverse recovery charge Q rr - 13 19 nC Rev. 1.3 page 3 2010-02-10 BSO303P H 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 2,5 8 2 6 -ID [A] Ptot [W] 1,5 4 1 2 0,5 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 1000 100 0.5 102 100 0.2 101 10 µs 10 0.1 100 µs 0.05 10 ZthJS [K/W] 101 -ID [A] 1 ms 10 ms 100 1 limited by on-state resistance 0.02 100 1 0.01 DC single pulse 10-1 10-1 10-2 0,1 10-2 0,01 0,01 0,1 1 10 100 0,00001 0,0001 0,001 0,01 0,1 1 10 10-1 100 101 102 10-5 10-4 10-3 10-2 10-1 100 101 -VDS [V] Rev. 1.3 0,1 tp [s] page 4 2010-02-10 BSO303P H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 70 -6 V -10 V -4.5 V 60 -4.0 V 50 -5 V 50 RDS(on) [mW] -ID [A] 40 -3.5 V 30 -3 V 40 -3.5 V 30 -4 V -4.5 V 20 -5 V -6 V 20 -3.0 V 10 -8 V -10 V 10 -2.5 V 0 0 0 2 4 6 8 10 0 10 -VDS [V] 20 30 40 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 30 30 gfs [S] -ID [A] 20 20 10 10 150 °C 25 °C 0 0 0 1 2 3 4 0 -VGS [V] Rev. 1.3 10 20 30 -ID [A] page 5 2010-02-10 BSO303P H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-8.2 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-100 mA 30 2,5 28 26 2 98 % 24 22 -VGS(th) [V] RDS(on) [mW] max. 20 18 16 1,5 typ. 1 min. typ. 14 0,5 12 10 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 102 10000 150 °C, 98% 101 25 °C, typ 103 IF [A] C [pF] Ciss 1000 150 °C, typ Coss 100 Crss 25 °C, 98% 102 10-1 100 0 8 16 24 0 1 1,5 2 2,5 3 -VSD [V] -VDS [V] Rev. 1.3 0,5 page 6 2010-02-10 BSO303P H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-8.2 A pulsed parameter: T j(start) parameter: V DD 102 10 8 101 -6 V -15 V -24 V -VGS [V] -IAV [A] 6 25 °C 4 100 100 °C 100 101 102 103 125 °C 2 0 0 tAV [µs] 10 20 30 40 -Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 mA 35 34 33 -VBR(DSS) [V] 32 31 30 29 28 27 26 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.3 page 7 2010-02-10 BSO303P H Package Outline PG-DSO-8: Outline Rev. 1.3 page 8 2010-02-10 BSO303P H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2010-02-10