BSO303PNTMA1

BSO303P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO303P P-SO 8 V RDS(on) 21 mΩ -8.2 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package -30 ID • Logic Level Type VDS A SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -8.2 TA=70°C -6.6 ID puls Pulsed drain current Unit -32.4 TA=25°C EAS 97 mJ dv/dt -6 kV/µs Gate source voltage VGS ±20 V Power dissipation Ptot 2 W -55... +150 °C Avalanche energy, single pulse ID =-8.2 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.2A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 55/150/56 Page 1 2002-01-08 BSO303P Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 50 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 62.5 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -30 - - VGS(th) -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-100µA IDSS Zero gate voltage drain current µA VDS =-30V, VGS =0, Tj =25°C - -0.1 -1 VDS =-30V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 26 32 mΩ RDS(on) - 18 21 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-6.6A Drain-source on-state resistance VGS =-10V, ID =-8.2A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev.1.2 Page 2 2002-01-08 BSO303P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 11 22 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-6.6A Input capacitance Ciss VGS =0, VDS =-25V, - 1761 - Output capacitance Coss f=1MHz - 495 - Reverse transfer capacitance Crss - 410 - Turn-on delay time td(on) VDD =-15V, VGS =-10V, - 10.6 15.9 Rise time tr ID =-1A, RG=6Ω - 12.9 19.3 Turn-off delay time td(off) - 55.4 83.1 Fall time tf - 39.3 59 - -4.25 -6.4 - -15.2 -23 - -48.3 -72.5 V(plateau) VDD =-24V, ID =-8.2A - -2.4 - V IS - - -2.2 A - - -32.4 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-24V, ID =-8.2A VDD =-24V, ID =-8.2A, nC VGS =0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.88 -1.32 Reverse recovery time trr VR =-15V, |IF | = |lD |, - 24.4 36.6 ns Reverse recovery charge Qrr diF /dt=100A/µs - 12.8 19.2 nC Rev.1.2 Page 3 2002-01-08 BSO303P 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 10 V 2.6 BSO303P -10 W BSO303P A 2.2 -8 2 -7 ID Ptot 1.8 1.6 -6 1.4 -5 1.2 1 -4 0.8 -3 0.6 -2 0.4 -1 0.2 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 /I D A = S( on VD 160 TA 3 Safe operating area 2 BSO303P °C 10 2 BSO303P K/W S tp = 90.0µs 100 µs ) 10 1 RD -10 1 Z thJS ID 1 ms 10 ms -10 0 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 0.02 DC 10 -3 0.01 single pulse -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev.1.2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2002-01-08 BSO303P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.06 70 A VGS = -3V Vgs = -4.5V Vgs = -5V Vgs = -6V Vgs = -7V Vgs = -10V 55 - ID 50 VGS = -3.5V Ω RDS(on) 60 Vgs = -4V 45 VGS = -4V 0.04 40 35 0.03 Vgs = -3.5V VGS = -4.5V 30 25 0.02 20 Vgs = -3V 15 VGS = -5V VGS = -6V VGS = -8V VGS = -10V 0.01 10 Vgs = -2.5V 5 0 0 2 4 6 0 5 10 V 10 15 20 25 30 40 A - V DS - ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 40 35 A S - ID g fs 25 20 20 15 10 10 5 0 0 Rev.1.2 0.5 1 1.5 2 2.5 3 0 0 4 V - V GS 5 10 15 20 25 35 A - ID Page 5 2002-01-08 BSO303P 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -8.2 A, VGS = -10 V parameter: VGS = VDS 2.5 30 mΩ -V(GS)th RDS(on) V 98% 25 22.5 98% 1.5 20 typ. typ. 1 17.5 15 2% 0.5 12.5 10 -60 -20 20 60 100 °C 0 -60 160 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO303P A pF Ciss C IF -10 1 10 3 Coss -10 0 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 15 20 V 30 - V DS Rev.1.2 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-01-08 BSO303P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -8.2 A VGS = f (QGate ) VDD = -25 V, RGS = 25 Ω parameter: ID = -8.2 A pulsed 100 -16 mJ BSO303P V 80 VGS E AS -12 70 60 50 -10 -8 40 -6 30 0.2 VDS max -4 20 0.5 VDS max -2 10 0 25 50 75 100 150 °C Tj 0 0 0.8 VDS max 10 20 30 40 50 60 nC 75 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 BSO303P V (BR)DSS V -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 °C 180 Tj Rev.1.2 Page 7 2002-01-08 BSO303P Rev.1.2 Page 8 2002-01-08