BSO303SPHXUMA1

BSO303SP H OptiMOS®-P Power-Transistor Product Summary Features VDS • single P-Channel in SO8 RDS(on),max • Enhancement mode • Logic level -30 V VGS=-10 V 21 mW VGS=-4.5 V 31 mW -9.1 A ID • 150°C operating temperature • Qualified according JEDEC for traget applications PG-DSO-8 • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package BSO303SP H PG-DSO-8 Marking 303SP Lead free Halogen free Yes packing Yes dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Value Symbol Conditions ID Unit ≤10 secs steady state T A=25 °C -9.1 -7.2 T A=70 °C -7.1 -5.8 T A=25 °C -8.9 -7.2 T A=70 °C -7.1 -5.8 A A Pulsed drain current2) I D,pulse T A=25 °C2) -36 Avalanche energy, single pulse E AS I D= -9.1 A, R GS=25 W 97 mJ Gate source voltage V GS ±20 V Power dissipation P tot Operating and storage temperature T j, T stg ESD class T A=25 °C1) 1.56 -55 ... 150 JESD22-A114 HBM W °C 1B (500V - 1 kV) 260 Soldering temperature °C 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.1 2.50 page 1 2011-11-22 BSO303SP H Parameter Values Symbol Conditions Unit min. typ. max. - - 35 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area1), t p≤10 s - - 50 6 cm2 cooling area1), steady state - - 80 Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250mA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-100 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-30 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-7.8 A - 22 31 mW Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-9.1 A - 15 21 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-7.3 A 12 19 - S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 2 2011-11-22 BSO303SP H Parameter Values Symbol Conditions Unit min. typ. max. - 1750 2330 - 470 625 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 390 580 Turn-on delay time t d(on) - 10 15 Rise time tr - 11 17 Turn-off delay time t d(off) - 42 63 Fall time tf - 33 50 Gate to source charge Q gs - -4.8 -6.4 Gate charge at threshold Q g(th) - -2.6 -3.5 Gate to drain charge Q gd - -14 -21 Switching charge Q sw - -16 -24 Gate charge total Qg - -40 -54 Gate plateau voltage V plateau - -2.7 - Output charge Q oss - -14 -19 - - -2.1 - - -36.5 V GS=0 V, V DS=-25 V, f =1 MHz V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 W pF ns Gate Charge Characteristics3) V DD=-24 V, I D=9.1 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS A T A=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-9.1 A, T j=25 °C - -0.88 -1.2 V Reverse recovery time t rr V R=15 V, I F=-9.1 A, di F/dt =100 A/µs - 19 24 ns Reverse recovery charge Q rr - 9 11 nC 2) 3) See figure 3 See figure 16 for gate charge parameter definition Rev. 1.1 page 3 2011-11-22 BSO303SP H 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); |V GS|≥10 V; t p≤10 s 10 3 2.5 8 2 -ID [A] Ptot [W] 6 1.5 4 1 2 0.5 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 102 160 102 100 100 10 µs 1 µs 0.5 100 µs 0.2 101 101 10 10 0.1 1 ms 100 10-1 10-2 0.05 ZthJS [K/W] -ID [A] limited by on-state resistance 10 ms 1 DC 0.01 0.1 1 10 100 10-1 100 101 102 1 0.01 10-1 0.1 -VDS [V] Rev. 1.1 0.02 100 10-2 0.1 0.01 0.00001 10-5 single pulse 0.0001 0.001 0.01 0.1 1 10-4 10-3 10-2 10-1 100 10 101 tp [s] page 4 2011-11-22 BSO303SP H 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 40 2.5 V -10 V 35 -3 V -3.2 V -2.7 V -4.5 V -3.5 V 50 30 -3.5 V 40 20 -3.2 V 15 -3 V RDS(on) [mW] -ID [A] 25 30 -4.5 V 20 -10 V 10 -2.7 V 10 5 -2.5 V -2.3 V 0 0 0 1 2 0 3 10 20 -VDS [V] 30 40 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 40 40 30 30 gfs [S] -ID [A] parameter: T j 20 10 20 10 150 °C 25 °C 0 0 0 1 2 3 4 -VGS [V] Rev. 1.1 0 10 20 30 -ID [A] page 5 2011-11-22 BSO303SP H 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-9.1 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-100 mA 2.5 28 98 % 24 max. 2 -VGS(th) [V] RDS(on) [mW] 20 16 typ. 12 typ. 1.5 min. 1 8 0.5 4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 10000 25 °C, 98% 25 °C, typ 103 10 150 °C, typ IF [A] C [pF] Ciss 1000 150 °C, 98% Coss 1 Crss 102 0.1 100 0 10 20 30 -VDS [V] Rev. 1.1 0 0.5 1 1.5 2 -VSD [V] page 6 2011-11-22 BSO303SP H 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-9.1 A pulsed parameter: T j(start) parameter: V DD 10 10 25 9 6 100 8 15 125 24 7 -IAV [A] -VGS [V] 6 5 4 3 2 1 1 0 1 10 100 1000 0 10 tAV [µs] 20 30 40 -Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 mA 36 V GS 34 Qg 32 -VBR(DSS) [V] 30 28 V g s(th) 26 24 Q g (th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 1.1 page 7 2011-11-22 BSO303SP H Package Outline P-DSO-8: Outline Rev. 1.1 page 8 2011-11-22 BSO303SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2011-11-22