BSO330N02KG

BSO330N02K G OptiMOS™2 Power-Transistor Product Summary Features VDS • For fast switching converters and sync. rectification • Qualified according to JEDEC1) for target applications • Super Logic level 2.5V rated; N-channel RDS(on),max 20 V VGS=4.5 V 30 mW VGS=2.5 V 50 ID 6.5 • Dual n-channel A PG-DSO-8 • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Marking BSO330N02K PG-DSO-8 330N2K Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Value Symbol Conditions ID Unit 10 secs steady state V gs=4.5V, T C=25 °C2) 6.5 5.4 V gs=4.5V, T C=70 °C2) 5.2 4.3 V gs=2.5V, T C=25 °C2) 5.1 4.2 V gs=2.5V, T C=70 °C2) 4 3.3 A A Pulsed drain current I D,pulse T C=25 °C3) 26 Avalanche energy, single pulse E AS I D=6.5 A, R GS=25 W 19 mJ Reverse diode dv /dt dv /dt I D=6.5 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot ±12 T A=25 °C2) T A=25 °C1) Operating and storage temperature T j, T stg 1.4 W 2.5 -55 ... 150 °C 0 (0V to 250V) ESD Class 55/150/56 IEC climatic category; DIN IEC 68-1 Rev.1.02 2.0 V page 1 2013-11-11 BSO330N02K G Thermal characteristics Thermal resistance, junction - soldering point R thJS Thermal resistance, junction - ambient R thJA - - 50 minimal footprint, t p≤10 s - - 110 minimal footprint, steady state - - 150 6 cm2 cooling area2), t p≤10 s - - 63 6 cm2 cooling area2), steady state - - 90 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 20 - - Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 0.7 0.95 1.2 Zero gate voltage drain current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=125 °C - - 100 V µA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=5.1 A - 38 50 mW V GS=4.5 V, I D=6.5 A - 24 30 - 1.3 - W 10 20 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=6.5 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 2 2013-11-11 BSO330N02K G Parameter Values Symbol Conditions Unit min. typ. max. - 550 730 - 190 250 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=10 V, f =1 MHz Output capacitance C oss Reverse transfer capacitance C rss - 26 39 Turn-on delay time t d(on) - 7.4 - Rise time tr - 16.8 - Turn-off delay time t d(off) - 13.4 - Fall time tf - 2.8 - Gate to source charge Q gs - 1.2 1.6 Gate charge at threshold Q g(th) - 0.5 0.7 Gate to drain charge Q gd - 0.7 1.1 Switching charge Q sw - 1.4 2 Gate charge total Qg - 3.7 4.9 Gate plateau voltage V plateau - 2.2 - Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 3.4 4.5 Output charge Q oss V DD=10 V, V GS=0 V - 2.6 3.4 - - 1.5 - - 26 V DD=10 V, V GS=4.5 V, I D=6.5 A, R G,ext=1.6 W pF ns Gate Charge Characteristics4) V DD=10 V, I D=6.5 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 °C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=6.5 A, T j=25 °C - 0.88 1.2 V Reverse recovery time t rr V R=10 V, I F=6.5 A, di F/dt =100 A/µs - 14 - ns Reverse recovery charge Q rr V R=10 V, I F=6.5 A, di F/dt =100 A/µs - 4.8 - nC 4) See figure 16 for gate charge parameter definition Rev.1.02 page 3 2013-11-11 BSO330N02K G 1 Power dissipation 2 Drain current P tot=f(T A); t p≤10 s I D=f(T A); V GS≥4.5 V; t p≤10 s 2.5 7 6 2 5 1.5 ID [A] Ptot [W] 4 3 1 2 0.5 1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p)2) parameter: t p parameter: D =t p/T 102 102 0.5 1 µs 10 µs 100 µs 0.2 101 1 ms 101 0.05 ZthJA [K/W] ID [A] 10 ms 100 ms 100 DC 0.1 0.02 0.01 100 10-1 single pulse 10-2 10-1 10-1 100 101 102 VDS [V] Rev.1.02 10-5 10-4 10-3 10-2 10-1 100 101 102 103 tp [s] page 4 2013-11-11 BSO330N02K G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 30 60 2V 2.2 V 4V 50 2.5 V 3V RDS(on) [mW] 40 ID [A] 20 2.5 V 3V 30 3.5 V 4.5 V 2.4 V 10 4V 20 2.2 V 10 2V 1.8 V 1.6 V 0 0 1 2 0 3 0 4 8 VDS [V] 12 16 20 16 20 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 20 30 16 20 ID [A] gfs [S] 12 8 10 4 150 °C 25 °C 0 0 0 1 2 3 VGS [V] Rev.1.02 0 4 8 12 ID [A] page 5 2013-11-11 BSO330N02K G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=6.5 A; V GS=4.5 V V GS(th)=f(T j); V GS=V DS 50 1.6 40 98% 30 VGS(th) [V] RDS(on) [mW] 1.2 typ 20 200 µA 20 µA 0.8 0.4 10 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 102 Ciss 101 25 °C 150 °C, 98% IF [A] C [pF] Coss 102 150 °C 100 25 °C, 98% Crss 101 10-1 0 5 10 15 20 VDS [V] Rev.1.02 0 0.5 1 1.5 2 VSD [V] page 6 2013-11-11 BSO330N02K G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=6.5 A pulsed parameter: T j(start) parameter: V DD 101 5 25 °C 4 100 °C 16 V 10 V 125 °C 4V VGS [V] IAV [A] 3 100 2 1 10-1 0 100 101 102 0 103 1 tAV [µs] 2 3 4 5 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 24 V GS Qg VBR(DSS) [V] 22 20 V gs(th) 18 Q g(th) Q sw Q gs 16 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev.1.02 page 7 2013-11-11 BSO330N02K G Package Outline PG-TDSON-8 PG-DSO-8: Outline Rev.1.02 page 8 2013-11-11 BSO330N02K G Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.02 page 9 2013-11-11