BSO4410T

BSO4410 Preliminary data OptiMOS
=Small-Signal-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS(on) product (FOM) 150°C operating temperature  Avalanche rated  dv/dt rated Ideal for fast switching applications VDS 30 RDS(on) 13 ID Type Package Ordering Code Marking BSO4410 SO 8 Q67042-S4096 4410 V m 11.1 A Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 11.1 TA=70°C 8.9 ID puls 44.5 EAS 126 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2.5 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =11.1 A , VDD =25V, RGS =25
Reverse diode dv/dt mJ kV/µs IS =11.1A, VDS =24V, di/dt=200A/µs, Tjmax =150°C TA =25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2001-09-06 BSO4410 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 35 - - 110 - - 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1); t 10 sec. K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =42µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0V, Tj=25°C - 0.01 1 VDS =30V, VGS =0V, Tj=125°C - 10 100 IGSS - 1 100 nA RDS(on) - 15.6 18.8 m RDS(on) - 11 13 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=9.2A Drain-source on-state resistance VGS =10V, ID =11.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-09-06 BSO4410 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 13.5 27 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =8.9A Input capacitance Ciss VGS =0V, VDS =25V, - 1020 1280 Output capacitance Coss f=1MHz - 420 530 Reverse transfer capacitance Crss - 100 150 Gate resistance RG - 1.2 -  Turn-on delay time td(on) - 7.5 11.3 ns Rise time tr - 33 49 Turn-off delay time td(off) - 31 47 Fall time tf - 23 35 - 3.2 4 - 9.3 14 - 17 21 - 14.6 18 V(plateau) VDD =15V, ID=11.1A - 3 - V IS - - 2 A - - 44.5 VDD =15V, VGS=10V, ID =11.1A, RG =6.8
Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =15V, ID =11.1A VDD =15V, ID =11.1A, nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =11.1A, VGS =0V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =2A - 0.84 1.2 V Reverse recovery time trr VR =15V, IF =lS , - 29 36 ns Reverse recovery charge Qrr diF /dt=100A/µs - 28 35 nC Page 3 2001-09-06 BSO4410 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA) parameter: VGS  10 V 13 W A 2.4 11 2.2 10 2 9 1.8 ID Ptot BSO4410 2.8 BSO4410 8 1.6 7 1.4 6 1.2 5 1 4 0.8 3 0.6 0.4 2 0.2 1 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C = A 10 RD o S( V parameter : D = tp /T DS 10 2 n) tp = 200.0µs 10 1 1 ms 1 10 ms ID BSO4410 K/W Z thJS 10 2 BSO4410 160 °C TA 10 0 10 0 D = 0.50 10 -1 0.20 0.10 0.05 10 -1 single pulse 0.02 10 -2 DC 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 tp VDS Page 4 2001-09-06 3 BSO4410 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSO4410 A 24 42 m
Ptot = 2.5W i VGS [V] a 2.8 hgf 22 e ID 20 b 3.0 c 3.2 d 3.4 18 e 3.6 16 f 3.8 g 4.0 h 4.5 i 10.0 d 14 12 d e 32 f 28 24 g 20 16 10 c 8 h 12 6 i 8 4 b VGS [V] = 4 2 0 0 BSO4410 36 RDS(on) 28 a 0.5 1 1.5 2 2.5 3 3.5 4 V d 3.4 0 0 5 e f 3.6 3.8 4 g 4.0 h i 4.5 10.0 8 12 A 16 24 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 25 50 S A 40 g fs ID 35 15 30 25 10 20 15 5 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS V 0 0 4 Page 5 5 10 15 20 25 30 35 40 A ID 50 2001-09-06 BSO4410 Preliminary data 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 11.1 A, VGS = 10 V parameter: VGS = VDS , ID = 42 µA BSO4410 28 2.5 24 V m
max. V GS(th) RDS(on) 22 20 18 typ. 1.5 16 98% 14 min. 12 typ 1 10 8 6 0.5 4 2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF BSO4410 A Ciss IF 10 1 C 10 3 Coss Crss 10 2 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2001-09-06 BSO4410 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 11.1 A , VDD = 25 V, RGS = 25  parameter: ID = 11.1 A pulsed 130 16 BSO4410 mJ V 110 12 90 VGS E AS 100 80 10 70 8 60 50 6 40 0.2 VDS max 4 30 0.5 VDS max 20 0.8 VDS max 2 10 0 25 50 75 100 150 °C 0 0 10 20 30 40 nC 55 QGate Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 BSO4410 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 °C 180 Tj Page 7 2001-09-06 BSO4410 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2001-09-06