BSO4804
OptiMOS =Small-Signal-Transistor
Product Summary
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x RDS(on) product (FOM)
150°C operating temperature
Avalanche rated
dv/dt rated
Ideal for fast switching applications
VDS
30
RDS(on)
20
m
ID
8
A
V
• Pb-free lead plating; RoHS compliant
Type
Package
Ordering Code
BSO4804
PG-DSO-8-7 Q67042-S4097
Marking
4804
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA=25°C
8
TA=70°C
6.4
ID puls
32
EAS
90
mJ
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
2
W
-55... +150
°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID =8 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =8A, VDS =24V, di/dt=200A/µs, Tjmax=150°C
TA =25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Rev.1.1
55/150/56
Page 1
2005-09-06
BSO4804
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
45
-
-
110
-
-
62.5
Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
@ min. footprint; t 10 sec.
@ 6 cm 2 cooling area 1); t 10 sec.
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
30
-
-
VGS(th)
1.2
1.6
2
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =1mA
Gate threshold voltage, VGS = VDS
ID =30µA
Zero gate voltage drain current
µA
IDSS
VDS =30V, VGS =0V, Tj=25°C
-
0.01
1
VDS =30V, VGS =0V, Tj=125°C
-
10
100
IGSS
-
1
100
nA
RDS(on)
-
23.8
28.2
m
RDS(on)
-
17.4
20
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state resistance
VGS =4.5V, ID=6.7A
Drain-source on-state resistance
VGS =10V, ID =8A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.1.1
Page 2
2005-09-06
BSO4804
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
8.5
17
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID *RDS(on)max ,
ID =6.4A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
700
870
Output capacitance
Coss
f=1MHz
-
300
370
Reverse transfer capacitance
Crss
-
74
110
Gate resistance
RG
-
1.1
-
Turn-on delay time
td(on)
-
9.1
14
ns
Rise time
tr
-
27
40
Turn-off delay time
td(off)
-
18
27
Fall time
tf
-
24
36
-
1.9
2.4
-
5.8
8.7
-
13.5
17
-
10.3
13
V(plateau) VDD =15V, ID=8A
-
2.8
-
V
IS
-
-
1.8
A
-
-
32
VDD =15V, VGS=4.5V,
ID =6.7A, RG=9.1
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =15V, ID =8A
VDD =15V, ID =8A,
nC
VGS =0 to 5V
Output charge
Qoss
VDS =15V, ID =8A,
VGS =0V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TA=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =1.8A
-
0.9
1.3
V
Reverse recovery time
trr
VR =15V, IF =lS ,
-
24
30
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
16
20
nC
Rev.1.1
Page 3
2005-09-06
BSO4804
1 Power dissipation
2 Drain current
Ptot = f (TA )
ID = f (TA)
2.2
parameter: VGS 10 V
BSO4804
9
W
BSO4804
A
1.8
7
6
1.4
ID
Ptot
1.6
1.2
5
1
4
0.8
3
0.6
2
0.4
1
0.2
0
0
20
40
60
80
100
°C
120
0
0
160
20
40
60
80
100
120
TA
TA
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJS = f (tp )
parameter : D = 0 , TA = 25 °C
10
parameter : D = tp /T
/I D
2 BSO4804
=
A
RD
S(
V
D
160
°C
10 2
BSO4804
S
K/W
tp = 16.0µs
)
on
10 1
100 µs
Z thJS
10
1
ID
1 ms
10 0
10 ms
10 0
D = 0.50
10
-1
0.20
0.10
single pulse
0.05
10 -1
10 -2 -1
10
10
0
10
1
0.01
V
10
2
10 -3 -6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
s
10
tp
VDS
Rev.1.1
0.02
10 -2
DC
Page 4
2005-09-06
2
BSO4804
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
19
BSO4804
65
Ptot = 2W
m
A
d
VGS [V]
a
2.8
16
14
b
3.0
c
3.2
ID
d
c
12
10
8
50
3.4
e
3.6
f
3.8
g
4.0
h
4.5
i
10.0
c
55
RDS(on)
i hg
f e
BSO4804
d
45
40
e
35
f
30
g
b
25
h
6
20
i
15
a
4
10
2
0
0
5
0.5
1
1.5
2
2.5
3
3.5
4
V
0
0
5
VGS [V] =
c
3.2
d
3.4
2
e
f
3.6 3.8
g
4.0
4
h
i
4.5 10.0
6
8
10
A
14
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
gfs = f(ID ); Tj=25°C
parameter: gfs
40
35
A
S
30
g fs
ID
25
25
20
20
15
15
10
10
5
5
0
0
Rev.1.1
0.5
1
1.5
2
2.5
3
3.5
V 4.5
VGS
Page 5
0
0
5
10
15
20
25
30
40
A
ID
2005-09-06
BSO4804
9 Drain-source on-state resistance
10 Gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 8 A, VGS = 10 V
parameter: VGS = VDS , ID = 30 µA
42
m
BSO4804
2.5
V
32
V GS(th)
RDS(on)
36
28
24
max.
typ.
1.5
98%
20
min.
typ
1
16
12
0.5
8
4
0
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
100
Tj
°C 160
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD)
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
4
10 2
pF
BSO4804
A
10 3
10 1
C
IF
Ciss
Coss
Crss
10 2
10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
0
5
10
15
20
V
30
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
Rev.1.1
10 -1
0
Page 6
2005-09-06
BSO4804
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj )
VGS = f (QGate )
par.: ID = 8 A , VDD = 25 V, RGS = 25
parameter: ID = 8 A pulsed
90
16
mJ
V
70
12
VGS
E AS
BSO4804
60
10
50
8
40
6
30
0.2 VDS max
4
20
0.5 VDS max
2
10
0
25
50
75
100
150
°C
0
0
0.8 VDS max
4
8
12
16
20
24
28
32
36 nC 42
QGate
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
parameter: ID=10 mA
36
BSO4804
V (BR)DSS
V
34
33
32
31
30
29
28
27
-60
-20
20
60
100
°C
180
Tj
Rev.1.1
Page 7
2005-09-06
BSO4804
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev.1.1
Page 8
2005-09-06