BSO4822

BSO4822 Preliminary data OptiMOSâ Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 30 V RDS(on) 10 mΩ ID • Logic Level 12.7 A • Excellent Gate Charge x RDS(on) product (FOM) • 150°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching applications Type Package Ordering Code Marking BSO4822 SO 8 Q67042-S4095 4822 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C 12.7 TA=70°C 10.2 ID puls 51 EAS 165 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 2.5 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse mJ ID =12.7 A , VDD =25V, RGS =25Ω Reverse diode dv/dt kV/µs IS =12.7A, VDS =24V, di/dt=200A/µs, Tjmax =150°C TA =25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2002-01-28 BSO4822 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 35 @ min. footprint; t ≤ 10 sec. - - 110 @ 6 cm 2 cooling area 1); t ≤ 10 sec. - - 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=1mA Gate threshold voltage, VGS = VDS ID =55µA Zero gate voltage drain current µA IDSS VDS =30V, VGS =0, Tj =25°C - 0.01 1 VDS =30V, VGS =0, Tj =125°C - 10 100 IGSS - 1 100 nA RDS(on) - 12 14.4 mΩ RDS(on) - 8.5 10 Gate-source leakage current VGS =20V, VDS=0 Drain-source on-state resistance VGS =4.5V, ID =10.6A Drain-source on-state resistance VGS =10V, ID=12.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-28 BSO4822 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 15.5 31 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max , ID =10.2A Input capacitance Ciss VGS =0, VDS =25V, - 1310 1640 Output capacitance Coss f=1MHz - 480 600 Reverse transfer capacitance Crss - 100 150 Gate resistance RG - 1.3 - Ω Turn-on delay time td(on) VDD =15V, VGS=10V, - 7.9 12 ns Rise time tr ID =12.7A, RG =5.1Ω - 38 57 Turn-off delay time td(off) - 30 45 Fall time tf - 16 24 - 4.4 5.5 - 9.8 12.2 - 21 26.2 - 17.5 22 V(plateau) VDD =15V, ID=12.7A - 2.9 - V IS - - 1.9 A - - 51 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =15V, ID=12.7A VDD =15V, ID=12.7A, nC VGS =0 to 5V Output charge Qoss VDS =15V, ID =12.7A, VGS =0 Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, IF=1.9A - 0.83 1.2 V Reverse recovery time trr VR =15V, IF =lS , - 29 36 ns Reverse recovery charge Qrr diF /dt=100A/µs - 25 31 nC Page 3 2002-01-28 BSO4822 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA) parameter: VGS ≥ 10 V BSO4822 14 W A 2.4 12 2.2 11 2 10 1.8 9 ID Ptot BSO4822 2.8 1.6 8 1.4 7 1.2 6 1 5 0.8 4 0.6 3 0.4 2 0.2 1 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C 10 2 BSO4822 = R A o S( D 160 °C parameter : D = tp /T VD 10 2 n) tp = 32.0µs BSO4822 K/W 100 µs 10 1 1 ms Z thJS 10 1 ID 10 ms 10 0 10 0 D = 0.50 10 -1 0.20 0.10 0.05 10 -1 DC 10 -2 0.02 single pulse 0.01 10 -2 -1 10 10 0 10 1 V 10 2 VDS 10 -3 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 s 10 tp Page 4 2002-01-28 2 BSO4822 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS j BSO4822 A 32 Ptot = 2.5W hg f e 22 20 b 2.8 c 3.0 d 3.2 e 3.4 18 f 3.6 16 g 3.8 h 4.0 d 14 12 i 4.5 j 10.0 e mΩ VGS [V] a 2.6 24 ID BSO4822 d i RDS(on) 30 24 f 20 g 16 h 12 10 i c 8 j 8 6 4 2 0 0 4 VGS [V] = b d 3.2 a 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 e f 3.4 3.6 4 g 3.8 h i j 4.0 4.5 10.0 8 12 16 20 VDS A 28 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID); Tj=25°C parameter: gfs 32 60 S A 50 45 g fs ID 24 20 40 35 16 30 25 12 20 8 15 10 4 5 0 0 0.5 1 1.5 2 2.5 3 0 0 4 V VGS Page 5 10 20 30 40 50 60 80 A ID 2002-01-28 BSO4822 Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 12.7 A, VGS = 10 V parameter: VGS = VDS 21 BSO4822 2.5 mΩ V 16 V GS(th) RDS(on) 18 14 12 max. typ. 1.5 98% 10 min. typ 1 8 6 0.5 4 2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 2 pF BSO4822 A Ciss 10 3 10 1 IF C Coss Crss 10 2 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 VDS 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2002-01-28 BSO4822 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 12.7 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 12.7 A pulsed 180 16 mJ V 140 12 VGS E AS BSO4822 120 10 100 8 80 6 60 0.2 VDS max 4 40 0.5 VDS max 0.8 VDS max 2 20 0 25 50 75 100 150 °C Tj 0 0 10 20 30 40 50 nC 65 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 BSO4822 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 °C 180 Tj Page 7 2002-01-28 BSO4822 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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