BSO612CV G

Rev. 2.2 BSO 612 CV G SIPMOS  Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS(on) N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current ID · Pb-free lead plating;RoHS compliant Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at T j = 25 °C, unless otherwise specified Symbol Parameter Value N Unit P ID Continuous drain current A T A = 25 °C 3 -2 T A = 70 °C 2.4 -1.6 12 -8 I D puls Pulsed drain current T A = 25 °C EAS Avalanche energy, single pulse W I D = -2 A, VDD = -25 V, R GS = 25 W I D = 3 A, V DD = 25 V, R GS = 25 EAR Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C mJ 47 - - 70 0.2 0.2 dv/dt kV/µs I S = 3 A, V DS = 48 V, di/dt = 200 A/µs 6 - I S = -2 A, V DS = -48 V, di/dt = -200 A/µs - 6 Gate source voltage VGS ±20 ±20 V Power dissipation Ptot 2 2 W T A = 25 °C T j , Tstg Operating and storage temperature °C -55...+150 55/150/56 IEC climatic category; DIN IEC 68-1 Page 1 2019-07-30 Rev. 2.2 BSO 612 CV G Termal Characteristics Parameter Symbol Values Unit min. typ. max. - - 40 - - 40 N - - 110 @ 6 cm 2 cooling area 1) ; t £ 10 sec. N - - 62.5 @ min. footprint; t P - - 70 P - - 62.5 Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) N RthJS P RthJA SMD version, device on PCB: @ min. footprint; t £ £ K/W 10 sec. 10 sec. @ 6 cm 2 cooling area 1) ; t £ 10 sec. Static Characteristics, at Tj = 25 °C, unless otherwise specified V(BR)DSS Drain- source breakdown voltage V VGS = 0 V, ID = 250 µA N 60 - - VGS = 0 V, ID = -250 µA P -60 - - Gate threshold voltage, VGS = VDS VGS(th) ID = 20 µA N 2.1 3 4 ID = -450 µA P -2.1 -3 -4 IDSS Zero gate voltage drain current µA VDS = 60 V, VGS = 0 V, Tj = 25 °C N - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 °C N - 10 100 VDS = -60 V, VGS = 0 V, Tj = 25 °C P - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C P - -10 -100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V N - 10 100 VGS = -20 V, VDS = 0 V P - -10 -100 RDS(on) Drain-source on-state resistance W VGS = 10 V, ID = 3 A N - 0.09 0.12 VGS = -10 V , ID = -2 A P - 0.22 0.3 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2019-07-30 Rev. 2.2 BSO 612 CV G Electrical Characteristics , at T j = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Characteristics gfs Transconductance VDS³2 * I D * R DS(on)max, ID = 3 A VVDS³2 * I D * R DS(on)max, ID = -2 A S N 2 4 - P 1.2 2.4 - Ciss Input capacitance pF VGS = 0 V, V DS = 25 V, f = 1 MHz N - 275 340 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 320 400 Coss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 90 115 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 105 130 Crss Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 50 65 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 40 50 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W W W VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W ns N - 12 18 P - 15 23 N - 35 55 P - 60 90 N - 25 40 P - 145 220 N - 30 45 P - 95 140 tr VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Fall time td(on) td(off) W tf W Page 3 2019-07-30 Rev. 2.2 BSO 612 CV G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics Q gs Gate to source charge nC VDD = 48 V, ID = 3 A N - 1 1.5 VDD = -48 V, ID = -2 A P - 2 3 Q gd Gate to drain charge VDD = 48 V, ID = 3 A N - 5.5 8.3 VDD = -48 V, ID = -2 A P - 4.5 6.8 Qg Gate charge total VDD = 48 V, ID = 3 A, VGS = 0 to 10V N - 10.3 15.5 VDD = -48 V, ID = -2 A, VGS = 0 to -10V P - 10.5 16 V(plateau) Gate plateau voltage V VDD = 48 V, ID = 3 A N - 5 - VDD = -48 V, ID = -2 A P - -4 - Inverse diode continuous forward current N IS - - 3 T A = 25 °C P - - -2 Inverse diode direct current,pulsed N ISM - - 12 T A = 25 °C P - - -8 Reverse Diode VSD Inverse diode forward voltage V VGS = 0 V, I F = I S N - 0.9 1.2 VGS = 0 V, I F = I S P - -0.9 -1.2 trr Reverse recovery time ns VR = 30 V, IF=l S, di F/dt = 100 A/µs N - 55 85 VR = -30 V, IF=l S , diF/dt = -100 A/µs P - 55 85 Qrr Reverse recovery charge nC VR = 30 V, IF=l S , diF/dt = 100 A/µs N - 90 135 VR = -30 V, I F=lS, diF/dt = -100 A/µs P - 65 100 Page 4 A 2019-07-30 Rev. 2.2 BSO 612 CV G Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) Ptot = f (TA) Ptot = f (TA ) BSO 612 CV BSO 612 CV 2.2 2.2 W 1.8 1.8 1.6 1.6 Ptot Ptot W 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 TA °C 160 TA Drain current (N-Ch.) Drain current (P-Ch.) I D = f (T A) ID = f (TA) parameter: VGS³ 10 V parameter: VGS ³ -10 V BSO 612 CV BSO 612 CV 3.2 -2.2 A A -1.8 -1.6 2.0 ID ID 2.4 -1.4 -1.2 1.6 -1.0 1.2 -0.8 -0.6 0.8 -0.4 0.4 0.0 0 -0.2 20 40 60 80 100 120 °C 0.0 0 160 TA 20 40 60 80 100 120 °C 160 TA Page 5 2019-07-30 Rev. 2.2 BSO 612 CV G Safe operating area (N-Ch.) Safe operating area (P-Ch.) I D = f ( VDS ) ID = f ( VDS ) parameter : D = 0 , T A = 25 °C parameter : D = 0 , TA = 25 °C 10 2 BSO 612 CV -10 1 BSO 612 CV tp = 200.0µs /I D A S( on V = 1 ms on ) S 100 µs ) -10 0 ID ID RD VD DS ( = R 10 1 DS A tp = 45.0 µs /I D 10 ms 1 ms 10 0 10 ms -10 -1 10 -1 DC DC 10 -2 -1 10 10 0 10 1 -10 -2 -1 -10 10 2 V -10 0 VDS -10 1 V VDS Transient thermal impedance (N-Ch.) Transient thermal impedance (P-Ch.) Z thJC = f(t p) ZthJC = f(tp) parameter : D = tp/T parameter : D = tp /T 10 2 -10 2 BSO 612 CV 10 2 BSO 612 CV K/W K/W Z thJC 10 1 Z thJC 10 1 10 0 10 0 D = 0.50 D = 0.50 0.20 0.20 0.10 0.10 single pulse 10 -1 0.05 single pulse 0.01 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 10 -1 0.02 0.02 0.01 10 -2 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 s s s 10 4 tp 10 4 tptp Page 6 2019-07-30 Rev. 2.2 BSO 612 CV G Typ. output characteristics (N-Ch.) Typ. output characteristics (P-Ch.) I D = f (VDS) ID = f (VDS ) parameter: tp = 80 µs parameter: tp = 80 µs BSO 612 CV 7.5 BSO 612 CV -5.0 Ptot = 2.00W A A V GS [V] h 6.0 5.5 g 5.0 a 4.0 b 4.2 c 4.5 d 4.7 e 4.5 f 4.0 3.5 e f 5.2 g 5.5 h 5.7 i 6.0 -4.0 -4.2 c -4.5 d -4.7 e -5.0 f -6.0 c -3.0 -2.5 b -2.0 3.0 2.5 a d b -3.5 5.0 f V GS [V] e -4.0 ID i ID Ptot = 2.00W a -1.5 d 2.0 c 1.5 1.0 -1.0 b -0.5 a 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 5.0 VDS -5.0 VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) RDS(on) = f (ID ) parameter: VGS parameter: VGS BSO 612 CV BSO 612 CV 1.0 0.38 W b c d e f g W a b c d 0.32 0.28 RDS(on) RDS(on) 0.8 0.24 0.20 0.7 0.6 0.5 0.16 0.4 h 0.12 f 0.08 0.04 e 0.3 i 0.2 VGS [V] = 0.00 0.0 b 4.2 c 4.5 1.0 d 4.7 e f 5.0 5.2 2.0 g 5.5 3.0 0.1 h i 5.7 6.0 4.0 5.0 A VGS [V] = a b c d e f -4.0 -4.2 -4.5 -4.7 -5.0 -6.0 0.0 A 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 °C 6.5 ID -5.0 IDTj Page 7 2019-07-30 Rev. 2.2 BSO 612 CV G Typ. transfer characteristics (N-Ch.) Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs I D = f (VGS), V DS ³ 2 x I D x R DS(on)max parameter: tp = 80 µs ID = f (VGS ), VDS ³ 2 x ID x RDS(on)max 10 5.0 A 8 4.0 7 3.5 ID ID A 6 3.0 5 2.5 4 2.0 3 1.5 2 1.0 1 0.5 0 0 1 2 3 4 5 VGS 0.0 0.0 7 1.0 2.0 3.0 4.0 6.0 VGS V V Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 °C gfs = f(ID); Tj = 25 °C parameter: g fs parameter: gfs 4.0 7.0 S S 6.0 5.5 3.0 4.5 gfs gfs 5.0 2.5 4.0 2.0 3.5 3.0 1.5 2.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 0.0 0.0 A 10 ID -1.0 -2.0 -3.0 -4.0 -6.0 A I DID Page 8 2019-07-30 Rev. 2.2 BSO 612 CV G Drain-source on-resistance (N-Ch.) Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) RDS(on) = f (Tj) parameter : I D = 3 A , VGS = 10 V parameter : ID = -2 A , VGS = -10 V BSO 612 CV BSO 612 CV 0.34 0.80 W W RDS(on) RDS(on) 0.28 0.24 0.20 0.60 0.50 0.40 0.16 98% 0.12 typ 0.30 0.08 0.20 0.04 0.10 0.00 -60 -20 20 98% 60 100 °C 0.00 -60 180 typ -20 20 60 °C 100 Tj 180 Tj Gate threshold voltage (N-Ch.) Gate threshold voltage (P-Ch.) VGS(th) = f (T j) VGS(th) = f (Tj) parameter: VGS = VDS, ID = 20 µA parameter: VGS = VDS , ID = -450 µA 5.0 -5.0 V V 98% 98% -4.0 V GS(th) V GS(th) 4.0 3.5 typ 3.0 2.5 -3.5 typ -3.0 -2.5 2% 2% 2.0 -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 -6 -60 -20 20 60 100 0.0 -6 -60 160 °C Tj Page 9 -20 20 60 100 160 °C Tj 2019-07-30 Rev. 2.2 BSO 612 CV G Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) C = f(VDS) C = f(VDS ) parameter: VGS=0 V, f=1 MHz parameter: VGS =0 V, f=1 MHz 10 3 10 3 pF pF C iss C C C iss 10 2 10 2 C oss C oss C rss C rss 10 1 0 5 10 15 20 25 VDS 10 1 0 35 -5 -10 -15 -20 -25 V VDS -35 V Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs parameter: Tj , tp = 80 µs 10 1 BSO 612 CV -10 1 BSO 612 CV A A IF -10 0 IF 10 0 10 -1 10 -2 0.0 -10 -1 0.4 0.8 Tj = 25 °C typ Tj = 25 °C typ Tj = 150 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 25 °C (98%) Tj = 150 °C (98%) Tj = 150 °C (98%) 1.2 1.6 2.0 2.4 V 3.0 -10 -2 0.0 VSD -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VVSD SD Page 10 2019-07-30 Rev. 2.2 BSO 612 CV G Avalanche Energy EAS = f (Tj) (N-Ch.) Avalanche Energy EAS = f (Tj ) parameter: ID = 3 A, VDD = 25 V RGS = 25 W parameter: ID = -2 A, VDD = -25 V RGS = 25 W 50 80 mJ mJ 40 60 E AS E AS 35 30 25 50 40 20 30 15 20 10 10 5 0 25 45 65 85 105 125 0 25 165 °C 45 65 85 105 125 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3 A VGS = f (QGate) parameter: ID = -2 A BSO 612 CV BSO 612 CV 16 -16 V V -12 VGS 12 VGS 165 °C 10 8 -10 -8 0,2 VDS max 0,8 VDS max 6 -6 4 -4 2 -2 0 0 2 4 6 8 nC 0 0 12 QGate 0,2 VDS max 2 4 6 8 0,8 VDS max 10 12 14 16 nC 19 QGate Page 11 2019-07-30 Rev. 2.2 BSO 612 CV G Drain-source breakdown voltage Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) V(BR)DSS = f (Tj ), (P-Ch.) BSO 612 CV BSO 612 CV 72 -72 V 68 V(BR)DSS V(BR)DSS V 66 -68 -66 64 -64 62 -62 60 -60 58 -58 56 -56 54 -60 -20 20 60 100 °C -54 -60 180 Tj -20 20 60 100 °C 180 Tj Page 12 2019-07-30 SIPMOSSmall-Signal-Transistor BSO612CVG RevisionHistory BSO612CV G Revision:2019-08-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2019-08-06 Update logos Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.2,2019-08-06