BSO615C G

Rev. 2.2 BSO 615 C G SIPMOS  Small-Signal-Transistor Features Product Summary · Dual N- and P -Channel Drain source voltage VDS Drain-Source on-state · Enhancement mode · Logic Level resistance · Avalanche rated Continuous drain current N P 60 -60 V RDS(on) 0.11 0.3 W ID 3.1 -2 A · Pb-free lead plating; RoHS compliant Type Package Marking BSO 615 C PG-DSO-8 615C Maximum Ratings,at T j = 25 °C, unless otherwise specified Symbol Parameter Value N Unit P ID Continuous drain current A T A = 25 °C 3.1 -2 T A = 70 °C 2.5 -1.6 12.4 -8 I D puls Pulsed drain current T A = 25 °C EAS Avalanche energy, single pulse I D = 3.1 A , VDD = 25 V, R GS = 25 W I D = -2 A , VDD = -25 V, RGS = 25 W EAR Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C mJ 47 - - 70 0.2 0.2 dv/dt kV/µs I S = 3.1 A, V DS = 48 V, di/dt = 200 A/µs 6 - I S = -2 A, V DS = -48 V, di/dt = -200 A/µs - 6 Gate source voltage VGS ±20 ±20 V Power dissipation Ptot 2 2 W T A = 25 °C T j , Tstg Operating and storage temperature °C -55...+150 55/150/56 IEC climatic category; DIN IEC 68-1 Page 1 2019-07-30 Rev. 2.2 BSO 615 C G Termal Characteristics Parameter Symbol Values Unit min. typ. max. - - 40 - - 40 N - - 100 @ 6 cm 2 cooling area 1) ; t £ 10 sec. N - - 62.5 @ min. footprint; t P - - 110 P - - 62.5 Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) N RthJS P RthJA SMD version, device on PCB: @ min. footprint; t £ £ K/W 10 sec. 10 sec. @ 6 cm 2 cooling area 1) ; t £ 10 sec. Static Characteristics, at Tj = 25 °C, unless otherwise specified V(BR)DSS Drain- source breakdown voltage V VGS = 0 V, ID = 250 µA N 60 - - VGS = 0 V, ID = -250 µA P -60 - - Gate threshold voltage, VGS = VDS VGS(th) ID = 20 µA N 1.2 1.6 2.0 ID = -450 µA P -1 -1.5 -2.0 IDSS Zero gate voltage drain current µA VDS = 60 V, VGS = 0 V, Tj = 25 °C N - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 °C N - 10 100 VDS = -60 V, VGS = 0 V, Tj = 25 °C P - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C P - -10 -100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V N - 10 100 VGS = -20 V, VDS = 0 V P - -10 -100 RDS(on) Drain-source on-state resistance W VGS = 4.5 V, ID = 2.7 A N - 0.1 0.15 VGS = -4.5 V, ID = -1.7 A P - 0.27 0.45 RDS(on) Drain-source on-state resistance VGS = 10 V, ID = 3.1 A N - 0.07 0.11 VGS = -10 V , ID = -2 A P - 0.19 0.3 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2019-07-30 Rev. 2.2 BSO 615 C G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Characteristics gfs Transconductance VDS³2 * I D * R DS(on)max, ID = 2.7 A VVDS³2 * I D * R DS(on)max, ID = -1.7 A S N 2.25 5.5 - P 1.2 2.4 - Ciss Input capacitance pF VGS = 0 V, V DS = 25 V, f = 1 MHz N - 300 380 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 365 460 Coss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 90 120 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 105 135 Crss Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 50 65 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 40 50 td(on) Turn-on delay time VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 W N - 16 24 P - 24 36 N - 75 115 P - 105 160 N - 25 40 P - 125 190 tr Rise time VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 W td(off) Turn-off delay time VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W VDD = -30 V, V GS = -4.5 V, I D = -1.7 A, R G = 13 ns W tf Fall time VDD = 30 V, VGS = 4.5 V, I D = 2.7 A, RG = 16 W N - 18 27 VDD = -30 V, V GS = -4.5 V, I D = -1.7 , R G = 13 P - 90 135 W Page 3 2019-07-30 Rev. 2.2 BSO 615 C G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics Q gs Gate to source charge nC VDD = 48 V, ID = 3.1 A N - 0.5 0.75 VDD = -48 V, ID = -2 A P - 1.7 2.6 Q gd Gate to drain charge VDD = 48 V, ID = 3.1 A N - 6.3 9.5 VDD = -48 V, ID = -2 A P - 4.3 6.5 Qg Gate charge total VDD = 48 V, ID = 3.1 A, VGS = 0 to 10V N - 15 22.5 VDD = -48 V, ID = -2 A, VGS = 0 to -10V P - 13.5 20 V(plateau) Gate plateau voltage V VDD = 48 V, ID = 3.1 A N - 3.1 - VDD = -48 V, ID = -2 A P - -2.8 - Inverse diode continuous forward current N IS - - 3.1 T A = 25 °C P - - -2 Inverse diode direct current,pulsed N ISM - - 12.4 T A = 25 °C P - - -8 Reverse Diode VSD Inverse diode forward voltage V VGS = 0 V, I F = I S N - 0.8 1.1 VGS = 0 V, I F = I S P - -0.8 -1.1 trr Reverse recovery time ns VR = 30 V, IF=l S, di F/dt = 100 A/µs N - 50 75 VR = -30 V, IF=l S , diF/dt = -100 A/µs P - 85 130 Qrr Reverse recovery charge nC VR = 30 V, IF=l S , diF/dt = 100 A/µs N - 70 105 VR = -30 V, I F=lS, diF/dt = -100 A/µs P - 120 180 Page 4 A 2019-07-30 Rev. 2.2 BSO 615 C G Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) Ptot = f (TA) Ptot = f (TA ) BSO 615 C BSO 615 C 2.2 2.2 W 1.8 1.8 1.6 1.6 Ptot Ptot W 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 TA 160 TA Drain current (N-Ch.) Drain current (P-Ch.) I D = f (T A) ID = f (TA) parameter: VGS³ 10 V parameter: VGS ³ -10 V BSO 615 C BSO 615 C 3.4 -2.2 A A 2.8 -1.8 -1.6 ID 2.4 ID °C 2.0 -1.4 -1.2 1.6 -1.0 1.2 -0.8 -0.6 0.8 -0.4 0.4 0.0 0 -0.2 20 40 60 80 100 120 °C 0.0 0 160 TA 20 40 60 80 100 120 °C 160 TA Page 5 2019-07-30 Rev. 2.2 BSO 615 C G Safe operating area (N-Ch.) Safe operating area (P-Ch.) I D = f ( VDS ) ID = f ( VDS ) parameter : D = 0 , T A = 25 °C parameter : D = 0 , TA = 25 °C 10 2 BSO 615 C -10 1 BSO 615 C tp = 90.0 µs 100 µs /I D A o S( V = 1 ms on ) S 10 µs n) -10 0 100 µs ID ID RD VD DS ( = R 10 1 DS A tp = 4.7µs /I D 10 ms 1 ms 10 0 10 ms -10 -1 10 -1 DC DC 10 -2 -1 10 10 0 10 1 V 10 -10 -2 -1 -10 2 -10 0 -10 1 V VDS Transient thermal impedance (P-Ch.) Z thJC = f(t p) ZthJC = f(tp) parameter : D = tp/T parameter : D = tp /T 10 2 VDS Transient thermal impedance (N-Ch.) 2 -10 BSO 615 C 10 2 BSO 615 C K/W K/W 10 1 Z thJC Z thJC 10 1 10 0 10 D = 0.50 D = 0.50 0.20 0.20 0.10 0.10 0 0.05 single pulse 10 -1 0.02 0.05 single pulse 0.02 0.01 0.01 10 -1 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 10 -2 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 3 tp 10 1 ss 10 3 tptp Page 6 2019-07-30 Rev. 2.2 BSO 615 C G Typ. output characteristics (N-Ch.) Typ. output characteristics (P-Ch.) I D = f (VDS) ID = f (VDS ) parameter: tp = 80 µs parameter: tp = 80 µs BSO 615 C 7.5 BSO 615 C -5.0 Ptot = 2.00W A A V GS [V] 6.0 5.5 e 5.0 a 2.5 b 2.7 c 3.0 d 3.2 e f 3.7 4.0 g 4.0 V GS [V] f e a -2.5 b -2.7 c -3.0 d -3.2 e -3.5 d f -3.7 g -4.0 -4.0 -3.5 3.5 4.5 3.5 g ID g f ID Ptot = 2.00W -3.0 -2.5 c d -2.0 3.0 2.5 -1.5 c 2.0 b -1.0 1.5 a 1.0 b 0.5 -0.5 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 5.0 VDS -5.0 VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) RDS(on) = f (ID ) parameter: VGS parameter: VGS BSO 615 C BSO 615 C 1.0 0.36 W c d W e b c d 0.8 RDS(on) 0.28 RDS(on) a 0.24 0.7 0.6 0.20 0.5 0.16 0.4 0.12 0.08 0.04 g 0.00 0.0 d 3.2 e f 3.5 3.7 1.0 2.0 0.1 g 4.0 3.0 4.0 5.0 A f g 0.2 VGS [V] = c 3.0 e 0.3 f VGS [V] = 0.0 0.0 6.5 ID b c d e f a -2.5 -2.7 -3.0 -3.2 -3.5 -3.7 g -4.0 A -3.4 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 °C IDTj Page 7 2019-07-30 Rev. 2.2 BSO 615 C G Typ. transfer characteristics (N-Ch.) Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs I D = f (VGS), V DS ³ 2 x I D x R DS(on)max parameter: tp = 80 µs ID = f (VGS ), VDS ³ 2 x ID x RDS(on)max -5.0 7.0 A A 6.0 -4.0 5.5 -3.5 4.5 ID ID 5.0 4.0 -3.0 -2.5 3.5 3.0 -2.0 2.5 2.0 -1.5 1.5 -1.0 1.0 -0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V GS 5.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0VGS -5.0 V V Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 °C gfs = f(ID); Tj = 25 °C parameter: g fs parameter: gfs 10.0 4.0 S S 8.0 3.0 gfs gfs 7.0 6.0 5.0 2.5 2.0 4.0 1.5 3.0 1.0 2.0 0.5 1.0 0.0 0 1 2 3 4 5 6 7 8 0.0 0.0 A 10 ID -1.0 -2.0 -3.0 -4.0 -6.0 A I DID Page 8 2019-07-30 Rev. 2.2 BSO 615 C G Drain-source on-resistance (N-Ch.) Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) RDS(on) = f (Tj) parameter : I D = 3.1 A , VGS = 10 V parameter : ID = -2 A , VGS = -10 V BSO 615 C BSO 615 C 0.80 0.30 W W RDS(on) RDS(on) 0.24 0.22 0.20 0.18 0.16 0.50 0.40 98% 0.14 0.60 0.12 98% 0.30 0.10 typ typ 0.08 0.20 0.06 0.04 0.10 0.02 0.00 -60 -20 20 60 100 °C 0.00 -60 180 -20 20 60 °C 100 Tj Tj Gate threshold voltage (P-Ch.) VGS(th) = f (T j) VGS(th) = f (Tj) parameter: VGS = VDS, ID = 20 µA parameter: VGS = VDS , ID = -450 µA 3.0 -3.0 V V 2.5 -2.5 2.2 -2.2 V GS(th) V GS(th) Gate threshold voltage (N-Ch.) 98% 2.0 1.8 98% -2.0 -1.8 typ 1.5 1.2 -1.2 2% -1.0 0.8 -0.8 0.5 -0.5 0.2 -0.2 -20 20 typ -1.5 1.0 0.0 -6 -60 180 60 100 0.0 -6 -60 160 °C Tj Page 9 2% -20 20 60 100 160 °C Tj 2019-07-30 Rev. 2.2 BSO 615 C G Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) C = f(VDS) C = f(VDS ) parameter: VGS=0 V, f=1 MHz parameter: VGS =0 V, f=1 MHz 10 3 10 3 pF C C C iss pF C iss 10 2 C oss 10 2 C oss C rss C rss 10 1 0 5 10 15 20 25 VDS 10 1 0 35 -5 -10 -15 -20 -25 V VDS -35 V Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs parameter: Tj , tp = 80 µs 10 1 BSO 615 C 10 1 BSO 615 C A A IF 10 0 IF 10 0 10 -1 10 -2 0.0 10 -1 0.4 0.8 Tj = 25 °C typ Tj = 25 °C typ Tj = 150 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 25 °C (98%) Tj = 150 °C (98%) Tj = 150 °C (98%) 1.2 1.6 2.0 2.4 V 10 -2 0.0 3.0 VSD -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 VV -3.0 VVSD SD Page 10 2019-07-30 Rev. 2.2 BSO 615 C G Avalanche Energy EAS = f (Tj) (N-Ch.) Avalanche Energy EAS = f (Tj ) parameter: ID = 3.1 A , V DD = 25 V RGS = 25 W parameter: ID = -2 A , VDD = -25 V RGS = 25 W 50 80 mJ mJ 40 60 E AS E AS 35 30 25 50 40 20 30 15 20 10 10 5 0 25 45 65 85 105 125 0 25 165 °C 45 65 85 105 125 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3.1 A VGS = f (QGate) parameter: ID = -2 A BSO 615 C BSO 615 C 16 -16 V V -12 VGS 12 VGS 165 °C 10 8 -10 -8 0,2 VDS max 6 0,8 VDS max 4 -4 2 -2 0 0 2 4 6 8 10 12 14 16 nC 0,2 VDS max -6 0 0 20 2 4 6 8 0,8 VDS max 10 12 14 16 nC nC 20 QQGate Gate QGate Page 11 2019-07-30 Rev. 2.2 BSO 615 C G Drain-source breakdown voltage Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) V(BR)DSS = f (Tj ), (P-Ch.) BSO 615 C BSO 615 C 72 -72 V 68 V(BR)DSS V(BR)DSS V 66 -68 -66 64 -64 62 -62 60 -60 58 -58 56 -56 54 -60 -20 20 60 100 °C -54 -60 180 Tj -20 20 60 100 °C 180 Tj Page 12 2019-07-30 SIPMOSSmall-Signal-Transistor BSO615CG RevisionHistory BSO615C G Revision:2019-08-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2019-08-06 Update logos Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.2,2019-08-06