BSP179H6327XTSA1

BSP179 SIPMOS® Small-Signal-Transistor Features Product Summary • N-channel VDS 400 V RDS(on),max 24 W IDSS,min 40 mA • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT223 • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 9.18 13.14 24.96 102.48 Type Package Tape and Reel Marking Halogen- Packaging BSP179 PG-SOT223 H6327: 1000 pcs/reel BSP179 Yes Non dry BSP179 PG-SOT223 H6906: 1000 pcs/reel sorted in VGS(th) bands1) BSP179 Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T A=25 °C 0.21 T A=70 °C 0.17 0.83 Pulsed drain current I D,pulse T A=25 °C Reverse diode dv /dt dv /dt I D=0.21 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS 6 ±20 ESD sensitivity (HBM) as per JESD-A114-HBM Unit A kV/µs V 1A (>250V, 2|I D|R DS(on)max, I D=0.17 A W Threshold voltage V GS(th) sorted in bands3) J V GS(th) V DS=3 V, I D=94 µA 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.0 page 2 2015-06-23 BSP179 Parameter Values Symbol Conditions Unit min. typ. max. - 102 135 - 10 14 Dynamic characteristics4) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 6 9 Turn-on delay time t d(on) - 6.1 9.2 Rise time tr - 8.8 13.1 Turn-off delay time t d(off) - 17 25 Fall time tf - 68 102 Gate to source charge Q gs - 0.43 0.65 Gate to drain charge Q gd - 2.2 3.3 Gate charge total Qg - 4.5 6.8 Gate plateau voltage V plateau - 0.49 - V - - 0.21 A - - 0.83 - 0.84 1.1 V - 111 167 ns - 390 584 nC V GS=-3 V, V DS=25 V, f =1 MHz V DD=200 V, V GS=-3...5 V, I D=0.2 A, R G,ext=25 W pF ns Gate Charge Characteristics4) V DD=400 V, I D=0.21 A, V GS=-3 to 5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time4) t rr Reverse recovery charge4) Q rr 4) T A=25 °C V GS=-3 V, I F=0.21 A, T j=25 °C V R=200 V, I F=0.21 A, di F/dt =100 A/µs Defined by design. Not subjected to production test Rev. 2.0 page 3 2015-06-23 BSP179 1 Power dissipation 2 Drain current P tot)=f(T A) I D=f(T A); V GS≥10 V 2 0,25 0,2 1,5 ID [A] Ptot [W] 0,15 1 0,1 0,5 0,05 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 limited by on-state resistance 0.5 100 10 µs 100 µs 10-1 ZthJA [K/W] ID [A] 0.2 1 ms 101 0.1 0.05 10 ms single pulse 0.02 10-2 0.01 DC 10-3 100 100 101 102 103 VDS [V] Rev. 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2015-06-23 BSP179 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(VDS); Tj=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0,3 40 0V -0.2 V 0.1 V 10 V 0.5 V -0.1 V 1V 0.2 V 30 RDS(on) [W] 0,2 ID [A] 0.5 V 0.2 V 20 1V 0.1 V 0,1 10 V 0V 10 -0.1 V -0.2 V 0 0 0 2 4 6 8 10 0 0,05 0,1 VDS [V] 0,15 0,2 0,25 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0,25 0,2 0,2 0,15 ID [A] gfs [S] 0,15 0,1 0,1 0,05 0,05 0 -2 -1 0 1 VGS [V] Rev. 2.0 0 0,00 0,04 0,08 0,12 ID [A] page 5 2015-06-23 BSP179 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.01 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=94 µA 60 0 50 -0,5 40 -1 30 VGS(th) [V] RDS(on) [W] parameter: I D 98 % 20 98 % typ -1,5 -2 typ 2% 10 -2,5 0 -3 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-3 V; f =1 MHz 1 102 L K J 0,1 Ciss C [pF] 103 ID [mA] 10 M 140 Tj [°C] 11 Threshold voltage bands N 100 94 µA 101 Coss Crss 100 0,01 -2 -1,5 -1 -0,5 VGS [V] Rev. 2.0 0 10 20 30 VDS [V] page 6 2015-06-23 BSP179 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(VSD) V GS=f(Q gate); I D=0.21 A pulsed parameter: T j parameter: V DD 5 1 0.5 VDS(max) 4 25°C 0.2 VDS(max) 150°C 25°C 98% 3 0.8 VDS(max) 150°C 98% VGS [V] IF [A] 2 0,1 1 0 -1 -2 -3 0,01 0 0,5 1 1,5 2 0 0,4 0,8 1,2 1,6 2 2,4 2,8 3,2 3,6 4 25 °C, 98% Qgate [nC] VSD [V] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 500 VBR(DSS) [V] 460 420 380 340 300 -60 -20 20 60 100 140 Tj [°C] Rev. 2.0 page 7 2015-06-23 BSP179 Package Outline: 9.18 13.14 24.96 102.48 Footprint: Packaging: V DS=3 V, I D=94 µA 167 584 Dimensions in mm Rev. 2.0 page 8 2015-06-23