BSP296L6327

BSP296 Rev. 1.3 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS(on) 0.7 Ω • Logic Level ID 1.1 A • dv/dt rated PG-SOT-223 • Pb-free lead plating; RoHS compliant 4 3 2 1 Type Package Tape and Reel Information Marking BSP296 P-SOT-223 E6327 BSP296 BSP296 PG-SOT-223 L6327 BSP296 VPS05163 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 1.1 TA=70°C 0.88 Pulsed drain current Unit I D puls 4.4 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=1.1A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1 Ptot 1.79 W -55... +150 °C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2005-11-23 BSP296 Rev. 1.3 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 @ min. footprint - - 115 @ 6 cm 2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID =250µA Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current µA I DSS VDS=100V, VGS=0, Tj=25°C - - 0.1 VDS=100V, VGS=0, Tj=150°C - - 50 I GSS - 10 100 nA RDS(on) - 0.62 1 Ω RDS(on) - 0.43 0.7 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.95A Drain-source on-state resistance VGS=10V, ID=1.1A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2005-11-23 BSP296 Rev. 1.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.6 1.2 - S pF Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max, ID=0.88A Input capacitance Ciss VGS=0, VDS=25V, - 291 364 Output capacitance Coss f=1MHz - 53 66 Reverse transfer capacitance Crss - 29 36 Turn-on delay time td(on) VDD=50V, VGS=10V, - 5.2 7.8 Rise time tr ID=1.1A, RG=6Ω - 7.9 11.8 Turn-off delay time td(off) - 37.4 56.1 Fall time tf - 21.4 32.1 - 0.7 0.9 - 5 7.5 - 13.8 17.2 V(plateau) VDD =80V, ID = 1.1 A - 2.7 - V IS - - 1.1 A - - 4.4 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg VDD =80V, ID =1.1A VDD =80V, ID =1.1A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.82 1.2 V Reverse recovery time trr VR=50V, I F=lS , - 44.3 55.4 ns Reverse recovery charge Qrr diF/dt=100A/µs - 71.9 89.8 nC Page 3 2005-11-23 BSP296 Rev. 1.3 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS ≥ 10 V BSP296 1.9 1.3 W A 1.6 1.1 BSP296 1 0.9 1.2 ID P tot 1.4 0.8 0.7 1 0.6 0.8 0.5 0.6 0.4 0.3 0.4 0.2 0.2 0.1 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T 1 BSP296 10 °C 10 2 BSP296 K/W tp = 120.0µs A ) DS (o n 0 1 ms ID R 10 Z thJA = V DS /I D 10 1 10 0 10 -1 10 ms D = 0.50 0.20 10 -1 10 -2 0.10 0.05 0.02 10 -3 single pulse 10 -4 -7 10 10 0.01 DC 10 -2 10 0 10 1 10 2 V 10 3 VDS -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2005-11-23 BSP296 Rev. 1.3 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 2 2 3.7V 3.9V 4.1V 1.6 4.3V 4.5V 1.4 10V 3.1V 1.2 2.7V 1 0.8 2.1V Ω R DS(on) ID A 2.5V 2.7V 3.1V 3.7V 3.9V 4.5V 5V 6V 10V 1.4 1.1 2.5V 0.8 0.6 2.1V 0.4 0.5 0.2 0 0 0.5 1 1.5 2 0.2 0 3 V 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 2 2 2 S gfs A ID A ID 1.2 1.2 0.8 0.8 0.4 0.4 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 4 VGS 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 ID Page 5 2005-11-23 BSP296 Rev. 1.3 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 1.1 A, VGS = 10 V parameter: VGS = VDS ; ID =400µA BSP296 2.4 2.8 Ω V 2.4 2 V GS(th) R DS(on) 2.2 2 1.8 1.6 1.6 1.4 1.4 1.2 1.2 1 1 typ. 2% 0.8 98% 0.8 98% 1.8 0.6 0.6 0.4 typ 0.4 0.2 0.2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 BSP296 A C iss pF C IF 10 0 10 2 Coss 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2005-11-23 BSP296 Rev. 1.3 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 1.1 A pulsed, Tj = 25 °C 16 BSP296 BSP296 120 V V (BR)DSS V V GS 12 10 114 112 110 108 106 8 0.2 VDS max 104 0.5 VDS max 102 6 0.8 V DS max 100 98 4 96 94 2 92 0 0 2 4 6 8 10 12 14 16 90 -60 18 nC 21 QG -20 20 60 100 °C 180 Tj Page 7 2005-11-23 BSP296 Rev. 1.2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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