BSP296NH6433XTMA1

BSP296N OptiMOS™ Small-Signal-Transistor Product Summary Features VDS • N-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) 100 V VGS=10 V 0.6 W VGS=4.5 V 0.8 ID 1.2 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT223 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Halogen-Free Packing BSP296N SOT223 H6327: 1000 pcs/ reel BSP296N Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 1.2 T A=70 °C 0.9 Pulsed drain current I D,pulse T A=25 °C 4.6 Avalanche energy, single pulse E AS I D=1.2 A, R GS=25 W 15.0 Reverse diode dv /dt dv /dt I D=1.2 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±20 V 1.8 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=0.9 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain connection. PCB is vertical in still air. Rev 2.0 page 2 2013-04-04 BSP296N Parameter Values Symbol Conditions Unit min. typ. max. - 114.8 152.7 - 19.7 26.3 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 9.8 14.7 Turn-on delay time t d(on) - 3.5 5.3 Rise time tr - 3.8 5.7 Turn-off delay time t d(off) - 18.4 27.6 Fall time tf - 5.2 7.8 Gate to source charge Q gs - 0.27 0.4 Gate to drain charge Q gd - 1.45 2.2 Gate charge total Qg - 4.5 6.7 Gate plateau voltage V plateau - 2.4 - V - - 1.2 A - - 4.6 - 0.85 1.1 V - 27 40.5 ns - 30 45 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=1.2 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=50 V, I D=1.2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.0 T A=25 °C V GS=0 V, I F=1.2 A, T j=25 °C V R=50 V, I F=1.2 A, di F/dt =100 A/µs page 3 2013-04-04 BSP296N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2 1.25 1.8 1.6 1 1.4 0.75 ID [A] Ptot [W] 1.2 1 0.8 0.5 0.6 0.4 0.25 0.2 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 10 102 1 µs 10 µs 100 µs 1 0.5 1 ms ZthJA [K/W] 10 ms ID [A] 0.1 DC 0.2 101 0.1 0.05 0.02 0.01 0.01 single pulse 100 0.001 1 10 100 1000 VDS [V] Rev 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2013-04-04 BSP296N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 4.8 1000 10 V 4.4 4V 3.5 V 3.3 V 2.8 V 3V 4 3.6 750 3V RDS(on) [mW] 3.2 ID [A] 2.8 2.8 V 2.4 2 3.3 V 500 3.5 V 4V 4.5 V 1.6 10 V 1.2 250 0.8 0.4 0 0 0 2 4 6 8 0 0.8 1.6 VDS [V] 2.4 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 4.8 6 4 5 25 °C 150 °C 2.4 4.8 3.2 4.0 4.8 3 1.6 2 0.8 1 0 0 0 1 2 3 4 VGS [V] Rev 2.0 4 4 gfs [S] ID [A] 3.2 3.2 ID [A] 0.0 0.8 1.6 2.4 ID [A] page 5 2013-04-04 BSP296N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=1.2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=100 µA parameter: I D 1400 2.4 1200 2 max 1000 typ VGS(th) [V] RDS(on) [mW] 1.6 800 max 600 1.2 min 0.8 400 typ 0.4 200 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -10 40 Tj [°C] 90 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C Ciss 150 °C 100 IF [A] C [pF] 102 Coss 101 25 °C, 98% 10-1 Crss 150 °C, 98% 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] page 6 2013-04-04 BSP296N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=1.2 A pulsed parameter: T j(start) parameter: V DD 10 101 50 V 9 20 V 80 V 8 7 100 100 °C 25 °C 6 IAV [A] VGS [V] 125 °C 5 4 10-1 3 2 1 0 0 100 101 tAV [µs] 102 1 15 Drain-source breakdown voltage 2 3 4 5 Qgate [nC] 103 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 108 VBR(DSS) [V] 104 100 V gs(th) 96 92 88 Q g(th) Q sw Q gate 84 Q gs Q gd 80 -60 -20 20 60 100 140 180 Tj [°C] Rev 2.0 page 7 2013-04-04 BSP296N SOT223 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.0 page 8 2013-04-04 BSP296N Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.0 page 9 2013-04-04