BSP315PL6327HTSA1

Preliminary data BSP 315 P SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS(on) Enhancement mode • Avalanche rated Continuous drain current VDS ID -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated 4 3 2 1 VPS05163 Type Package Ordering Code Pin 1 Pin2/4 PIN 3 BSP 315 P SOT-223 Q67042-S4004 G D S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value ID Continuous drain current A T A = 25 °C -1.17 T A = 70 °C -0.94 ID puls Pulsed drain current Unit -4.68 T A = 25 °C EAS 24 EAR 0.18 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55...+150 °C Avalanche energy, single pulse mJ I D = -1.17 A , V DD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -1.17 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 1999-09-14 Preliminary data BSP 315 P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 25 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: K/W @ min. footprint - - 115 @ 6 cm 2 cooling area 1) - - 70 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - Gate threshold voltage, VGS = VDS I D = -160 µA VGS(th) -1 -1.5 -2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = -250 µA µA VDS = -60 V, V GS = 0 V, T j = 25 °C - -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.8 1.4 Ω RDS(on) - 0.5 0.8 Ω Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.5 V, I D = -0.89 A Drain-Source on-state resistance VGS = -10 V, I D = -1.17 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-09-14 Preliminary data BSP 315 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 0.7 1.4 - S Ciss - 130 160 pF Coss - 40 50 Crss - 17 21 td(on) - 24 36 tr - 9 14 td(off) - 32 48 tf - 19 28 Dynamic Characteristics Transconductance VDS≤2*I D*RDS(on)max , ID = -0.89 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Page 3 1999-09-14 Preliminary data BSP 315 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qgs - 0.7 1.1 Qgd - 1.8 2.6 Qg - 5.2 7.8 V(plateau) - -3.14 - Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -1.17 A Gate to drain charge VDD = -48 V, ID = -1.17 A Gate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V, ID = -1.17 A Parameter Symbol Values Unit min. typ. max. IS - - -1.17 ISM - - -4.68 VSD - -0.97 -1.3 V trr - 30.5 46 ns Qrr - 36 54 µC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = -1.17 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-09-14 Preliminary data BSP 315 P Power Dissipation Drain current Ptot = f (TA) ID = f(TA ) parameter :VGS ≥ −10V BSP 315 P BSP 315 P -1.3 1.9 A W -1.1 1.6 -1.0 1.4 1.2 ID Ptot -0.9 -0.8 -0.7 1.0 -0.6 0.8 -0.5 0.6 -0.4 -0.3 0.4 -0.2 0.2 -0.1 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 1 160 BSP 315 P 10 2 tp = 280.0µs BSP 315 P K/W D A 10 1 DS ( ID on ) = V -10 0 Z thJC DS /I 1 ms R 10 ms 10 0 D = 0.50 0.20 -10 -1 0.10 0.05 10 -1 0.02 single pulse 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 1999-09-14 Preliminary data BSP 315 P Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS BSP 315 P -2.8 BSP 315 P 2.6 Ptot = 2W Ω A -2.4 VGS [V] a -2.5 e d -2.2 ID -2.0 -1.8 -1.6 c -1.4 -1.2 -1.0 -0.8 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 k -8.0 b l -10.0 a b c d 2.2 2.0 RDS(on) li kj g f h 1.8 1.6 1.4 1.2 1.0 0.8 e 0.6 -0.6 0.4 -0.4 a -0.2 0.2 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 -5.0 g i h k j lk j VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.4 -0.8 -1.2 g h i -5.5 -6.0 -6.5 -7.0 -1.6 -2.0 VDS f l -8.0 -10.0 A -2.6 ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS≥ 2 x I D x RDS(on)max gfs = f(ID); Tj =25°C parameter: tp = 80 µs parameter: gfs 2.5 -3.0 A S ID gfs -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 0.0 0.0 0.5 1.0 1.5 2.0 A 3.0 ID VGS Page 6 1999-09-14 Preliminary data BSP 315 P Drain-source on-resistance Gate threshold voltage RDS(on) = f (T j) VGS(th) = f (Tj) parameter:I D = -1.17 A, V GS = -10 V parameter: VGS = VDS , ID = -160 µA BSP 315 P 2.1 -3.0 1.8 V Ω V GS(th) RDS(on) 1.6 1.4 98% -2.0 1.2 typ 1.0 98% -1.5 typ -1.0 0.8 2% 0.6 0.4 -0.5 0.2 0.0 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 100 Tj 160 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 pF BSP 315 P A Ciss -10 0 C IF 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Page 7 1999-09-14 Preliminary data BSP 315 P Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = -1.17 A , V DD = -25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID = -1.17 A pulsed BSP 315 P 25 -16 V mJ VGS E AS -12 15 -10 -8 10 0,2 VDS max -6 0,8 VDS max -4 5 -2 0 25 45 65 85 105 125 165 °C 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 315 P -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Page 8 1999-09-14 Preliminary data BSP 315 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-09-14