BSP318S

Rev 2.4 BSP318S SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel   Drain source voltage • Enhancement mode • Avalanche rated VDS Drain-Source on-state resistance RDS(on) Continuous drain current 60 V 0.09 Ω 2.6 A ID • Logic Level • dv/dt rated 4 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21 3 2 1 Marking Type Package Tape and Reel BSP318S PG-SOT223 H6327: 1000 pcs/r BSP318S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol VPS05163 Packaging Non dry Value Continuous drain current ID 2.6 Pulsed drain current ID puls 10.4 Unit A T A = 25 °C EAS 60 mJ Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax IAR 2.6 A EAR 0.18 mJ Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Avalanche energy, single pulse I D = 2.6 A, V DD = 25 V, R GS = 25 Ω kV/µs I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Tj , Tstg Operating and storage temperature 55/150/56 IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Class 1b Page 1 2012-11-28 Rev 2.4 BSP318S Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 17 - @ min. footprint - 100 - @ 6 cm 2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) RthJA SMD version, device on PCB: Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - Gate threshold voltage, VGS = VDS I D = 20 µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current IDSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, I D = 0.25 mA µA VDS = 60 V, V GS = 0 V, Tj = 25 °C - 0.1 1 VDS = 60 V, V GS = 0 V, Tj = 150 °C - - 100 IGSS - 10 100 nA RDS(on) - 0.12 0.15 Ω RDS(on) - 0.07 0.09 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A Drain-Source on-state resistance VGS = 10 V, I D = 2.6 A 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2012-11-28 Rev 2.4 BSP318S Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. gfs 2.4 5.5 - S Ciss - 300 380 pF Coss - 90 120 Crss - 50 65 td(on) - 12 20 tr - 15 25 td(off) - 20 30 tf - 15 25 Dynamic Characteristics Transconductance VDS≥2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Rise time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Turn-off delay time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Fall time VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Page 3 2012-11-28 Rev 2.4 BSP318S Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. QG(th) - 0.4 0.6 Gate charge at V GS = 5 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Qg(5) - 7 10 Gate charge total Qg - 14 20 V(plateau) - 3.6 - Dynamic Characteristics Gate charge at threshold nC VDD = 40 V, ID = 0.1 A, V = 1 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V , I D = 2.6 A Parameter Symbol Values Unit min. typ. max. IS - - 2.6 ISM - - 10.4 VSD - 0.95 1.2 V trr - 50 75 ns Qrr - 0.1 0.15 µC Reverse Diode Inverse diode continuous forward current A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Page 4 2012-11-28 Rev 2.4 BSP318S Power Dissipation Drain current Ptot = f (TA) ID = f (TA ) BSP318S BSP318S 1.9 2.8 A W 2.4 1.6 2.2 2.0 1.2 ID Ptot 1.4 1.8 1.6 1.0 1.4 1.2 0.8 1.0 0.6 0.8 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJA = f(tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T 10 2 BSP318S 10 2 A BSP318S K/W tp = 140.0µs /I D = R ( DS on V 10 1 DS Z thJA 10 1 ID 160 ) 1 ms 10 0 10 0 D = 0.50 10 ms 0.20 0.10 10 -1 0.05 10 -1 0.02 single pulse 0.01 DC 10 -2 -1 10 10 0 10 1 V 10 2 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 5 2012-11-28 Rev 2.4 BSP318S Typ. output characteristic Typ. transfer characteristics ID = f ( VGS ) I D = f (VDS); T j=25°C parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs BSP318S 6.5 15 Ptot = 1.80W A A VGS [V] a 2.0 5.0 ID 4.5 c 4.0 3.5 3.0 2.5 2.0 b 2.5 12 c 3.0 11 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 6 k 8.0 5 l 10.0 10 ID g ihjfe lk d 5.5 9 8 7 4 b 1.5 3 1.0 2 0.5 1 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0 0 5.0 1 2 3 4 5 6 7 8 VDS V 10 VGS Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = 2.6 A, V GS = 4.5 V parameter: VGS = VDS , ID = 20 µA BSP318S 0.36 3.0 Ω V 2.4 V GS(th) RDS(on) 0.28 0.24 0.20 2.2 2.0 1.8 1.6 98% 1.4 0.16 typ 1.2 0.12 1.0 max 0.8 0.08 0.6 typ 0.4 0.04 0.2 0.00 -60 -20 20 60 100 °C 180 Tj 0.0 -60 min -20 20 60 100 140 °C 200 Tj Page 6 2012-11-28 Rev 2.4 BSP318S Typ. capacitances Forward characteristics of reverse diode C = f(V DS) IF = f (VSD ) parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 10 2 BSP318S A pF Ciss C IF 10 1 10 2 Coss 10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 0.4 0.8 1.2 1.6 2.0 2.4 V VSD VDS E AS = f (T j) Avalanche Energy 3.0 Typ. gate charge parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID = 2.6 A pulsed BSP318S 65 16 mJ V 55 50 12 VGS EAS 45 40 10 35 8 30 0,2 VDS max 25 0,8 VDS max 6 20 4 15 10 2 5 0 20 40 60 80 100 120 °C 160 Tj 0 0 4 8 12 16 nC 24 QGate Page 7 2012-11-28 Rev 2.4 BSP318S Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP318S 72 V(BR)DSS V 68 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 180 Tj Page 8 2012-11-28 Rev 2.4 Page 9 BSP318S 2012-11-28