BSP321P
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• P-Channel
• Enhancement mode
VDS
-100
V
RDS(on),max
900
mW
ID
-0.98
A
• Normal level
• Avalanche rated
PG-SOT-223
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel Information
Marking
Lead free
Packing
BSP321P
PG-SOT-223
H6327: 1000 pcs/reel
BSP321P
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
T C=25 °C
-0.98
A
T C=70 °C
-0.79
-3.9
Pulsed drain current
I D,pulse
T C=25 °C
Avalanche energy, single pulse
E AS
I D=-0.98 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD Class
T C=25 °C
JESD22-A114-HBM
mJ
±20
V
1.8
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
Soldering temperature
55/150/56
IEC climatic category; DIN IEC 68-1
Rev 1.05
57
page 1
2012-11-27
BSP321P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
minimal footprint,
steady state
-
-
115
6 cm2 cooling area1),
steady state
-
-
70
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS,I D=-380 µA
-2.1
-3.0
-4
Zero gate voltage drain current
I DSS
V DS=-100 V, V GS=0 V,
T j=25 °C
-
-0.1
-1
V DS=-100 V, V GS=0 V,
T j=150 °C
-
-10
-100
V
µA
Gate-source leakage current
I GSS
V GS=-20 V, V DS=0 V
-
-10
-100
nA
Drain-source on-state resistance
R DS(on)
V GS=-10 V, I D=0.98 A
-
689
900
mW
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-0.79 A
0.6
1.2
-
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 1.05
page 2
2012-11-27
BSP321P
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
240
319
-
62
82
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=-25 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
28
42
Turn-on delay time
t d(on)
-
5.9
8.8
Rise time
tr
-
4.4
6.6
Turn-off delay time
t d(off)
-
16.5
24.7
Fall time
tf
-
8.5
12.7
Gate to source charge
Q gs
-
1.1
1.4
Gate to drain charge
Q gd
-
4
6
Gate charge total
Qg
-
9
12
Gate plateau voltage
V plateau
-
4.5
-
V
-
-
-0.98
A
-
-
-3.9
-
0.84
1.2
V
-
47
-
ns
-
96
-
nC
V DD=-50 V, V GS=10 V, I D=-0.98 A,
R G=6 W
ns
Gate Charge Characteristics2)
V DD=-80 V, I D=0.98 A, V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
2)
Q rr
T C=25 °C
V GS=0 V, I F=0.98 A,
T j=25 °C
V R=50 V, I F=|I S|,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev 1.05
page 3
2012-11-27
BSP321P
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); |V GS|≥10 V
2
1
0.8
1.5
-ID [A]
Ptot [W]
0.6
1
0.4
0.5
0.2
0
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
101
102
limited by on-state
resistance
100 µs
0.5
0.2
1 ms
100
101
ZthJS [K/W]
-ID [A]
0.1
10 ms
0.05
0.02
100 ms
10-1
100
0.01
DC
single pulse
10-2
10-1
100
101
102
103
-VDS [V]
Rev 1.05
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
page 4
2012-11-27
BSP321P
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4
2
-10 V
-4 V
-6 V
-4.5 V
-7 V
-5 V
1.6
2
RDS(on) [W]
-ID [A]
3
-5 V
1.2
-6 V
-7 V
-4.5 V
1
0.8
-8 V
-10 V
-4 V
0
0.4
0
2
4
6
8
10
0
1
-VDS [V]
2
3
4
3
4
-ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
4
3
125 °C
3
2
gfs [S]
-ID [A]
25 °C
2
1
1
0
0
0
2
4
6
8
0
-VGS [V]
Rev 1.05
1
2
-ID [A]
page 5
2012-11-27
BSP321P
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-0.98 A; V GS=-10 V
V GS(th)=f(T j); V GS=V DS; I D=-380 µA
2.5
5
2
min.
1.5
-VGS(th) [V]
RDS(on) [W]
4
98 %
1
typ.
3
max.
2
0.5
typ.
1
0
-60
-20
20
60
100
-60
140
-20
20
60
100
140
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
103
101
150 °C, typ
100
IF [A]
C [pF]
Ciss
25 °C, typ
102
150 °C, 98%
Coss
10-1
25 °C, 98%
Crss
101
10-2
0
20
40
60
80
100
0.5
1
1.5
-VSD [V]
-VDS [V]
Rev 1.05
0
page 6
2012-11-27
BSP321P
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=-0.98 A pulsed
parameter: T j(start)
parameter: V DD
100
12
25 °C
50 V
100 °C
10
20 V
80 V
125 °C
-IAV [A]
-VGS [V]
8
6
4
2
0
10-1
100
101
102
0
103
2
tAV [µs]
4
6
8
10
-Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=-250 µA
120
V GS
Qg
115
-VBR(DSS) [V]
110
105
V gs(th)
100
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev 1.05
page 7
2012-11-27
BSP321P
Package Outline: PG-SOT-223
Footprint:
Packaging:
Dimensions in mm
Rev 1.05
page 8
2012-11-27
BSP321P
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 1.05
page 9
2012-11-27
