BSP324E6327

Rev. 2.1 BSP324 SIPMOS  Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 400 V 25 Ω 0.17 A SOT-223 • Pb-free lead plating; RoHS compliant x Qualified according to AEC Q101 Type Package Pb-free Packaging Tape and Reel Information Marking BSP324 PG-SOT223 Yes L6327: 1000 pcs/reel Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current BSP324 Value Unit A ID TA=25°C 0.17 TA=70°C 0.14 Pulsed drain current ID puls 0.68 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C Gate source voltage ESD Class (JESD22-A114-HBM) V 1A (>250V,