BSP373L6327HTSA1

BSP373 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP373 100 V 1.7 A 0.3 Ω PG-SOT223 BSP373 Type BSP373 RoHS compliant Yes Pin 3 Pin 4 S D Tape and Reel Information Packaging L6327: 1000 pcs/reel Non dry Maximum Ratings Parameter Symbol Continuous drain current ID TA = 28 ˚C Values Unit A 1.7 DC drain current, pulsed IDpuls TA = 25 ˚C 6.8 Avalanche energy, single pulse mJ EAS ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C 45 Gate source voltage VGS Power dissipation Ptot TA = 25 ˚C Rev 2.0 ± 20 V W 1.8 1 2008-03-31 BSP373 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point 1) Values RthJA ≤ 70 R thJS ≤ 10 DIN humidity category, DIN 40 040 Unit ˚C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C Gate threshold voltage 100 - - 2.1 3 4 V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS μA IDSS VDS = 100 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 10 V, ID = 1.7 A Rev 2.0 nA IGSS - 2 0.16 0.3 2008-03-31 BSP373 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A Input capacitance 1.5 pF - 400 550 - 125 190 - 70 105 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 2.8 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rise time - 10 15 - 30 45 - 85 115 - 60 80 tr VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω Rev 2.0 3 2008-03-31 BSP373 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed - - 6.8 V 0.8 1.1 ns trr - - μC Qrr VR = 30 V, IF=lS, diF/dt = 100 A/μs Rev 2.0 1.7 - VR = 30 V, IF=lS, diF/dt = 100 A/μs Reverse recovery charge - V SD VGS = 0 V, IF = 1.7 A, Tj = 25 ˚C Reverse recovery time ISM TA = 25 ˚C Inverse diode forward voltage A IS - 4 - - 2008-03-31 BSP373 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 2.0 1.8 W Ptot A 1.6 ID 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 TA 120 ˚C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25˚C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev 2.0 5 2008-03-31 BSP373 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 μs 3.8 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 μs, Tj = 25 ˚C 0.9 lj k fe d c Ptotih = 2W g A a b Ω 3.2 VGS [V] a 4.0 ID b 2.8 b 2.4 2.0 1.6 1.2 a RDS (on) 0.7 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 0.6 0.5 0.4 0.3 c 0.2 0.8 d ikegjh f l 0.1 0.4 0.0 VGS [V] = a 4.0 b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.4 0.8 1.2 1.6 2.0 A VDS 2.8 ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 μs parameter: tp = 80 μs, 6.5 4.5 A S 5.5 ID gfs 5.0 4.5 3.5 3.0 4.0 3.5 2.5 3.0 2.0 2.5 1.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Rev 2.0 0.0 1.0 2.0 3.0 4.0 A 6.0 ID 6 2008-03-31 BSP373 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.7 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 0.75 4.6 Ω V 0.65 4.0 RDS (on)0.60 VGS(th) 98% 3.6 0.55 typ 3.2 0.50 2.8 0.45 0.40 2.4 98% 0.35 2% 2.0 0.30 1.6 0.25 typ 0.20 1.2 0.15 0.8 0.10 0.4 0.05 0.00 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 μs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 10 1 nF A IF C 10 0 10 0 Ciss 10 -1 10 -1 Coss Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 40 VDS Rev 2.0 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 2008-03-31 BSP373 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.7 A, VDD = 25 V RGS = 25 Ω, L = 23.3 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 50 120 V mJ 116 EAS 40 V(BR)DSS114 112 35 110 30 108 106 25 104 20 102 100 15 98 10 96 94 5 92 90 0 20 40 60 80 100 120 ˚C 160 Tj -60 -20 20 60 100 ˚C 160 Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C Rev 2.0 8 2008-03-31 BSP373 Rev 2.0 9 2008-03-31