BSP613PH6327

BSP613P SIPMOS  Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode RDS(on) • Avalanche rated ID • dv/dt rated -60 V 0.13 Ω -2.9 A PG-SOT223 • Ideal for fast switching buck converter Drain pin 2,4 Gate pin1 • Qualified according to AEC Q101 Source pin 3 • Halogen­free according to IE C 61249­2­21 Type Package Tape and reel BSP613P PG-SOT223 H6327: 1000pcs/r. Non  Dry Packaging Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Marking BSP613P Value Unit A ID TA=25°C -2.9 TA=70°C -2.3 ID puls -11.6 EAS 150 Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse mJ ID=2.9 A , V DD=-25V, RGS=25Ω kV/µs IS=2.9A, VDS=-48V, di/dt=-200A/µs, T jmax=150°C TA=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class JESD22-A114-HBM Rev.2.8 Class 1c Page 1 2016-05-30 BSP613P Thermal Characteristics Parameter Symbol Values Unit min. typ. max. RthJS - - 19 Thermal resistance, junction - ambient, leaded RthJA - 100 - SMD version, device on PCB: RthJA - - 100 - - 70 Characteristics Thermal resistance, junction - soldering point K/W (Pin 4) @ min. footprint @ 6 cm2 cooling area 1) Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -60 - - VGS(th) -2.1 -3 -4 Static Characteristics Drain-source breakdown voltage V V GS=0, I D=-250µA Gate threshold voltage, VGS = V DS ID=-1mA Zero gate voltage drain current µA IDSS V DS=-60V, VGS=0, Tj=25°C - -0.1 -1 V DS=-60V, VGS=0, Tj=125°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 0.11 0.13 Ω Gate-source leakage current V GS=-20V, VDS=0 Drain-source on-state resistance V GS=-10V, I D=2.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.8 Page 2 2016-05-30 BSP613P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 2.7 5.4 - S pF Dynamic Characteristics Transconductance g fs |VDS|≥2*|I D|*RDS(on)max , ID=2.9A Input capacitance Ciss V GS=0, V DS=-25V, - 715 875 Output capacitance Coss f=1MHz - 230 295 Reverse transfer capacitance Crss - 90 120 Turn-on delay time td(on) V DD=-30V, VGS=-10V, - 6.7 17 Rise time tr ID=2.9A, RG=2.7Ω - 9 18 Turn-off delay time td(off) - 26 52 Fall time tf - 7 19 - 2.5 3.8 - 8.9 14.3 - 22 33 V(plateau) V DD=-48V, I D=2.9A - -3.9 - V IS - - -2.9 A - - -11.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=-48V, I D=2.9A V DD=-48V, I D=2.9A, nC V GS=0 to -10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0V, |I F| = |I S| - -0.8 -1.1 V Reverse recovery time trr V R=-30V, |IF| = |I S|, - 37.2 79 ns Reverse recovery charge Qrr di F/dt=100A/µs - 59.8 112 nC Rev.2.8 Page 3 2016-05-30 BSP613P 1 Power Dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS≥ 10 V 1.9 3.2 W A 1.6 2.4 1.2 ID P tot 1.4 1 2 1.6 0.8 1.2 0.6 0.8 0.4 0.4 0.2 0 0 20 40 60 80 100 120 °C 0 160 0 20 40 60 80 100 120 TA 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f(tp) parameter : D = 0 , TA = 25 °C parameter: D = t p / T 2 K/W /ID 1 10 1 10 0 t = 100.0 p S ID VD ) (on DS Z thJC = R 10 2 10 A 10 160 TA 3 Safe operating area 10 °C 1 ms 0 10 -1 10 -2 10 ms D = 0.50 0.20 0.10 10 -1 10 -3 10 -4 10 -5 0.05 0.02 single pulse 0.01 DC 10 -2 -10 -1 -10 0 -10 1 V -10 2 VDS Rev.2.8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2016-05-30 BSP613P 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj =25°C parameter: VGS; Tj = 25 °C 0.5 7 A Ω Vgs = 5V 6 Vgs = 10V -I D 5 Vgs = 4.5V 4.5 4 R DS(on) 0.4 5.5 Vgs = 4V Vgs = 4,5V 0.35 0.3 Vgs = 6V 0.25 3.5 Vgs = 5V 3 0.2 2.5 Vgs = 4V 2 0.15 1.5 0.1 1 Vgs=3.5V 0 0.5 1 1.5 2 2.5 3 3.5 Vgs = 10V 0.05 0.5 0 Vgs = 6V 4 0 V 5 -VDS 0 1 2 3 A 4 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |I D| x RDS(on)max g fs = f(I D) parameter: Tj = 25 °C parameter: Tj = 25 °C 8 8 A S 6 gfs ID 6 5 5 4 4 3 3 2 2 1 1 0 6 -ID 0 Rev.2.8 1 2 3 4 5 0 7 V -VGS Page 5 0 1 2 3 4 5 6 7 8 A -ID 10 2016-05-30 BSP613P 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : I D = -2.9 A, V GS = -10 V parameter: VGS = VDS , ID = -1 mA -5.0 0.34 W V 98% -4.0 VGS(th) RDS(on) 0.28 0.24 0.20 0.16 -3.5 typ -3.0 98% -2.5 typ -2.0 2% 0.12 -1.5 0.08 -1.0 0.04 -0.5 0.00 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS=0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 pF A 10 3 -10 1 IF C Ciss Coss 10 2 -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -10 -1 0.0 -40 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS Rev.2.8 -0.4 Page 6 2016-05-30 BSP613P 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (T j) VGS = f (QG), parameter: VDS ; Tj = 25 °C par.: ID = 2.9 A , V DD = -25 V, RGS = 25 Ω ID = 2.9 A pulsed; 160 16 mJ V 12 V GS E AS 120 100 10 0.2 VDS max 80 8 0.8 VDS max 60 6 40 4 20 2 0 25 45 65 85 105 125 ºC 0 165 Tj 0 4 8 12 16 20 24 28 nC 34 |QG | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj Rev.2.8 Page 7 2016-05-30 BSP613P Package Outline SOT-223 Footprint Soldering type: Reflow soldering Soldering type: Wave soldering Tape and Reel Dimensions in mm Rev.2.8 Page 8 2016-05-30 -60VSIPMOSSmallSignalTransistor BSP613P RevisionHistory BSP613P Revision:2016-06-13,Rev.2.8 Previous Revision Revision Date Subjects (major changes since last revision) 2.8 2016-06-13 Insert package outlines TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.8,2016-06-13