BSP76E6433NT

HITFETÒ II.Generation BSP 76 Smart Lowside Power Switch Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 200 mW · Thermal shutdown with Nominal load current ID(Nom) 1.4 A Clamping energy EAS 150 mJ auto restart 42 V · Overload protection · Short circuit protection 4 · Overvoltage protection · Current limitation 3 2 · Analog driving possible 1 VPS05163 Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â Drain Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Page 1 2004-03-05 BSP 76 Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage VDS 42 Supply voltage for full short circuit protection Vbb(SC) 42 Continuous input voltage1) VIN Continuous input current2) IIN -0.2V £ VIN £ 10V Value Unit V -0.22) ... +10 mA self limited | IIN | £ 2 VIN < -0.2V or VIN > 10V °C Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation 5) Ptot 3.8 W Unclamped single pulse inductive energy 2) EAS 150 mJ Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, VLD 50 V 2 kV TC = 85 °C RL = 9 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 MSL1 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 40/150/56 Thermal resistance RthJA junction - ambient: K/W @ min. footprint 125 @ 6 cm 2 cooling area 4) 72 junction-soldering point: RthJS 17 K/W 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) Page 2 2004-03-05 BSP 76 Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 Characteristics Drain source clamp voltage VDS(AZ) V Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current µA IDSS Tj = -40...+85 °C, V bb = 32 V, VIN = 0 V - 1.5 8 Tj = 150 °C - 4 10 Input threshold voltage V VIN(th) ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) mW VIN = 5 V, ID = 1.4 A, Tj = 25 °C - 190 240 VIN = 5 V, ID = 1.4 A, Tj = 150 °C - 350 480 VIN = 10 V, I D = 1.4 A, Tj = 25 °C - 150 200 VIN = 10 V, I D = 1.4 A, Tj = 150 °C - 280 400 1.4 1.8 - 5 7.5 10 On-state resistance µA RDS(on) Nominal load current 5) ID(Nom) A VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C Current limit (active if VDS>2.5 V)1) ID(lim) VIN = 10 V, VDS = 12 V, t m = 200 µs 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by R thJA and Rds(on) Page 3 2004-03-05 BSP 76 Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 45 100 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: toff - 60 100 RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: -dVDS/dt on - 0.4 1.5 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.5 150 175 - °C Dynamic Characteristics Turn-on time VIN to 90% ID : µs V/µs RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Tjt Thermal hysteresis 2) DTjt - 10 - K Input current protection mode IIN(Prot) - 40 300 µA EAS 150 - - mJ VSD - 1 1.5 Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 1.4 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage V IF = 7 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Page 4 2004-03-05 BSP 76 Block diagram Inductive and overvoltage output clamp Terms RL V I IN 1 D IN 2 ID VDS D Z Vbb HITFET VIN S S 3 HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Page 5 2004-03-05 BSP 76 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. RON = f(Tj ); ID=1.4A; V IN=10V Ptot = f(TA) @ R thJA=72 K/W 10 500 mW W 8 RDS(on) max. 7 Ptot max. 400 6 350 300 5 250 4 200 3 150 2 6cm2 100 1 0 -75 typ. 50 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TS ;TA 3 On-state resistance 4 Typ. input threshold voltage RON = f(T j); ID= 1.4A; V IN=5V VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V 500 2 max. mW V 400 1.6 typ. 350 300 VGS(th) RDS(on) 175 Tj 1.4 1.2 250 1 200 0.8 150 0.6 100 0.4 50 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj -25 0 25 50 75 100 °C 150 Tj Page 6 2004-03-05 BSP 76 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: VIN 10 8 A A 8 7 ID(lim) ID 6 5 6 Vin=10V 5 4 5V 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 0 -50 10 -25 0 25 50 75 VIN 8 Off-state drain current I D=f(V DS); T Jstart=25°C Parameter: VIN IDSS = f(Tj) Vin=10V A 175 Tj 7 Typ. output characteristics 10 100 125 °C 11 µA 7V max. 9 8 6V 8 5V 6 IDSS ID 7 4V 7 6 5 5 4 typ. 4 3 3 3V 2 2 1 0 0 1 1 2 3 4 V 0 -50 6 VDS -25 0 25 50 75 100 125 °C 175 Tj Page 7 2004-03-05 BSP 76 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T 10 2 12 K/W A -40°C 8 0.2 0.1 25°C ZthJA ID(lim) 10 1 D=0.5 85°C 0.05 10 0 6 0.02 0.01 150°C 4 10 -1 2 Single pulse 0 0 0.5 1 1.5 2 2.5 3 ms 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 4 s 10 4 tp t 11 Determination of ID(lim) ID(lim) = f(t); t m = 200µs Parameter: TJstart 12 ID(lim) A -40°C 8 25°C 85°C 6 4 150°C 2 0 0 0.1 0.2 0.3 0.4 ms 0.55 t Page 8 2004-03-05 BSP 76 Package Ordering Code SOT-223 Q67060-S7201-A2 1.6 ±0.1 6.5 ±0.2 +0.2 acc. to DIN 6784 1 2 3 3.5 ±0.2 4 7 ±0.3 B 15˚ max 0.1 max 3 ±0.1 0.5 min A 0.28 ±0.04 2.3 0.7 ±0.1 4.6 0.25 M A 0.25 M B GPS05560 Page 9 2004-03-05 BSP 76 Revision History : Previous version : 2004-03-05 2003-04-22 Page Subjects (major changes since last revision) 2, 4 Footnote 2 extended to Vin