BSP88E6327

BSP 88 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.6...1.2V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 88 240 V 0.32 A 8Ω SOT-223 BSP 88 Type BSP 88 Ordering Code Q67000-S070 Pin 3 Pin 4 S D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 240 Unit V DGR RGS = 20 kΩ 240 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 25 ˚C 0.32 DC drain current, pulsed IDpuls TA = 25 ˚C 1.28 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 1.7 1 05.99 BSP 88 Maximum Ratings Parameter Symbol Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 72 R thJS ≤ 12 Thermal resistance, junction-soldering point 1) Values DIN humidity category, DIN 40 040 Unit ˚C K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 240 - - 0.6 0.8 1.2 VDS = 240 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 240 V, V GS = 0 V, Tj = 125 ˚C - 10 100 VDS = 100 V, V GS = 0 V, Tj = 25 ˚C - - 100 Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 4.5 V, ID = 0.32 A - 4 8 VGS = 2.8 V, ID = 14 mA - 6 15 Data Sheet 2 nA nA IGSS VGS = 20 V, VDS = 0 V µA 05.99 BSP 88 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.32 A Input capacitance 0.14 - 80 110 - 15 25 - 8 12 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.34 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Rise time - 5 8 - 10 15 - 30 40 - 25 35 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Data Sheet 3 05.99 BSP 88 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.32 - - 1.28 V V SD VGS = 0 V, IF = 0.5 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 1.05 1.3 05.99 BSP 88 Power dissipation Ptot = ƒ(TA) Ptot Drain current ID = ƒ(TA) parameter: VGS ≥ 4 V 2.0 0.34 W A 1.6 ID 0.28 1.4 0.24 1.2 0.20 1.0 0.16 0.8 0.12 0.6 0.08 0.4 0.04 0.2 0.0 0.00 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 TA 120 ˚C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25˚C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 88 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.75 26 Ptot = 2W Ω k i lj hgf A 0.65 ID Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C a b c d e 22 VGS [V] a 1.5 0.60 d b 2.0 c 2.5 d 3.0 0.45 e 3.5 0.40 f 4.0 g 4.5 h 5.0 0.30 i 6.0 0.25 j 7.0 0.55 0.50 c 0.35 b 0.20 k 8.0 l 10.0 RDS (on) 20 18 16 14 12 10 8 e 6 0.15 4 0.10 a 2 0.05 0.00 0 f igk hj l VGS [V] = a 1.5 b 2.0 c 2.5 d 3.0 e f 3.5 4.0 0.20 0.30 g 4.5 h i 5.0 6.0 j 7.0 k l 8.0 10.0 0 1 2 3 4 5 6 7 V 9 0.00 0.10 0.40 0.50 VDS A 0.65 ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, 1.3 0.55 A S 1.1 ID gfs 1.0 0.45 0.40 0.9 0.35 0.8 0.7 0.30 0.6 0.25 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 0.0 VGS Data Sheet 0.2 0.4 0.6 0.8 A 1.1 ID 6 05.99 BSP 88 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.32 A, VGS = 4.5 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 20 2.6 Ω V 2.2 RDS (on) 16 VGS(th) 2.0 14 1.8 12 1.6 1.4 98% 10 8 98% 1.2 of 1.0 typ 0.8 6 typ 2% 0.6 4 0.4 2 0.2 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 1 pF A IF C 10 2 10 0 Ciss Coss 10 1 10 -1 Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -2 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BSP 88 Safe operating area ID=f(V DS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 285 V 275 V(BR)DSS270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99