BSR202NL6327HTSA1

BSR202N OptiMOS®2 Small-Signal-Transistor Product Summary Features 20 V VGS=4.5 V 21 mΩ VGS=2.5 V 33 VDS • N-channel RDS(on),max • Enhancement mode • Super Logic level (2.5V rated) 3.8 ID A • Avalanche rated • Footprint compatible to SOT23 PG-SC-59 • dv /dt rated 3 • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 1 Type Package BSR202N PG-SC-59 Tape and Reel Information L6327 = 3000 pcs. / reel 2 Marking Lead Free Packing LAs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 3.8 T A=70 °C 3.1 15.2 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=3.8 A, R GS=25 Ω 30 mJ Reverse diode dv /dt dv /dt I D=3.8 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114-HBM Soldering Temperature V 0.5 W -55 ... 150 °C 0 (0V to 250V) 260 °C IEC climatic category; DIN IEC 68-1 Rev. 1.09 ±12 55/150/56 page 1 2012-07-31 BSR202N Parameter Values Symbol Conditions Unit min. typ. max. - - 250 20 - - Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0 V, I D= 250 µA Gate threshold voltage V GS(th) V DS=VGS , I D=30 µA 0.7 0.95 1.2 Drain-source leakage current I DSS V DS=20 V, V GS=0 V, T j=25 °C - - 1 V DS=20 V, V GS=0 V, T j=150 °C - - 100 V μA Gate-source leakage current I GSS V GS=12 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=3 A - 25 33 mΩ V GS=4.5 V, I D=3.8 A - 17 21 17 - Transconductance Rev. 1.09 g fs |V DS|>2|I D|R DS(on)max, I D=3.8 A page 2 S 2012-07-31 BSR202N Parameter Values Symbol Conditions Unit min. typ. max. - 863 1147 - 278 370 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 40 60 Turn-on delay time t d(on) - 8.8 - Rise time tr - 16.7 - Turn-off delay time t d(off) - 19 - Fall time tf - 3.7 - Gate to source charge Q gs - 1.66 2.21 Gate to drain charge Q gd - 1.1 1.6 Gate charge total Qg - 5.8 8.8 Gate plateau voltage V plateau - 1.9 - V - - 0.8 A - - 15.2 - 0.8 1.1 - 14.3 - 7.6 V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=3.8 A, R G=6 Ω ns Gate Charge Characteristics V DD=10 V, I D=3.8 A, V GS=0 to 4.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.09 T A=25 °C V GS=0 V, I F=3.8 A, T j=25 °C V R=10 V, I F=3.8 A, di F/dt =100 A/µs page 3 V ns - nC 2012-07-31 BSR202N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥4.5 V 0.6 4 0.5 3 ID [A] Ptot [W] 0.4 0.3 2 0.2 1 0.1 0 0 0 40 80 120 160 0 40 TA [°C] 80 120 160 TA [°C] 3 Safe operating p g area 4 Max. transient thermal impedance p I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 103 limited by on-state resistance 10 µs 0.5 101 1 ms 100 µs 102 0.2 0.1 ZthJA [K/W] 100 ID [A] 10 ms 10-1 0.05 101 0.02 0.01 DC single pulse 100 10-2 10-3 10-1 10-2 10-1 100 101 102 10-4 VDS [V] Rev. 1.09 10-3 10-2 10-1 100 101 tp [s] page 4 2012-07-31 BSR202N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 16 60 4.5 V 1.8 V 3V 2.2 V 2V 14 2.5 V 50 2.4 V 12 40 2.2 V RDS(on) [mΩ] ID [A] 10 8 6 30 2.5 V 3V 20 2V 3.5 V 4.5 V 4 6V 10 1.8 V 2 1.6 V 0 0 0 1 2 3 0 4 VDS [V] 8 12 16 3 4 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 8 20 7 6 15 25 °C 4 gfs [S] ID [A] 5 150 °C 10 3 2 5 1 0 0 0 1 2 3 VGS [V] Rev. 1.09 0 1 2 ID [A] page 5 2012-07-31 BSR202N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=3.8 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=30 µA 40 1.6 30 1.2 98 % 98 % VGS(th) [V] RDS(on) [mΩ] parameter: I D 20 typ typ 0.8 2% 10 0.4 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 102 104 101 Ciss 103 IF [A] C [pF] 100 Coss 25 °C 10-1 102 150 °C, 98% 150 °C Crss 25 °C, 98% 10-2 101 0 5 10 15 20 VDS [V] Rev. 1.09 10-3 0 0.4 0.8 1.2 1.6 VSD [V] page 6 2012-07-31 BSR202N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=3.8 A pulsed parameter: T j(start) parameter: V DD 101 10 9 25 °C 8 7 100 °C 100 16 V 6 VGS [V] IAV [A] 125 °C 10 V 5 4V 4 10-1 100 101 102 3 103 2 1 0 0 2 tAV [µs] 4 6 8 10 12 14 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 25 V GS 24 Qg 23 VBR(DSS) [V] 22 21 20 V g s(th) 19 18 Q g (th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev. 1.09 page 7 2012-07-31 BSR202N Package Outline: PG-SC59 1.1 ±0.1 3 ±0.1 0.1 0.2 2.8 +0.2 -0.1 3 1 0.45 ±0.15 0.1 M +0.1 1.6 +0.15 -0.3 3x0.4 +0.05 -0.1 0.15 MAX. 2 0.1 M 0.95 0.95 (0.55) +0.1 0.15 -0 .05 0˚...8˚ MAX. GPS09473 Footprint: 0.9 1.3 0.9 0.8 1.2 HLG09474 Dimensions in mm Rev. 1.09 page 8 2012-07-31 BSR202N Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user Rev. 1.09 page 9 2012-07-31