BSR315PH6327XTSA1

BSR315P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -60 V RDS(on),max 0.8 W -0.62 A ID • Logic level • Footprint and pinning compatible with SOT-23 / SuperSOT-23 packages • Avalanche rated SC-59 • Pb-free lead finishing; RoHS compliant • Qualified according to AEC Q101 • Halogen free according to IEC61249-2-21 Type Package Tape and reel information Marking Halogen-free Packing BSR315P PG-SC59 H6327 = 3000 pcs. / reel LB Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C -0.62 T A=70 °C -0.49 -2.48 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=0.62 A, R GS=25 W Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class T A=25 °C JESD22-C101 24 mJ ±20 V 0.5 W -55 ... 150 °C 1A (250V to 500V) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.06 A page 1 2015-07-24 BSR315P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-160 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=-0.49 A - 870 1300 mW V GS=-10 V, I D=-0.62 A - 620 800 0.5 0.9 - Transconductance Rev 1.06 g fs |V DS|>2|I D|R DS(on)max, I D=-0.49 A page 2 S 2015-07-24 BSR315P Parameter Values Symbol Conditions Unit min. typ. max. - 132 176 - 42 56 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 20 30 Turn-on delay time t d(on) - 8 13 Rise time tr - 28 46 Turn-off delay time t d(off) - 21 32 Fall time tf - 20 30 Gate to source charge Q gs - 0.4 0.5 Gate to drain charge Q gd - 2 3 Gate charge total Qg - 4 6 Gate plateau voltage V plateau - -3 - V - - -0.56 A - - -2.5 - -0.82 -1.2 V - 32 48 ns - 29 43 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=-10 V, I D=-0.62 A, R G,ext=6 W pF ns Gate Charge Characteristics1),2) V DD=-48 V, I D=-0.62 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge 2) Q rr T A=25 °C V GS=0 V, I F=-0.62 A, T j=25 °C V R=-30 V, I F=|I S|, di F/dt =100 A/µs 2) Defined by design. Not subjected to production test 1) See figure 16 for gate charge parameter definition Rev 1.06 page 3 2015-07-24 BSR315P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 0.7 0.5 0.6 0.5 0.4 0.3 -ID [A] Ptot [W] 0.4 0.3 0.2 0.2 0.1 0.1 0 0 0 40 80 120 0 160 40 TA [°C] 80 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 10 µs limited by on-state resistance 100 µs 0.5 102 1 ms 100 0.2 ZthJS [K/W] -ID [A] 10 ms 100 ms 0.1 0.05 101 0.02 0.01 10-1 100 DC single pulse 10-2 10-1 0.1 1 10 100 -VDS [V] Rev 1.06 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2015-07-24 BSR315P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 3 1500 -6 V -8 V 1400 -3 V -10 V -4.5 V 1300 1200 2 RDS(on) [mW] -3.5 V -ID [A] -4 V 1100 -4 V 1000 -4.5 V 900 -5 V 1 -3.5 V 800 -6 V 700 -8 V -3 V -10 V 600 -2.5 V 0 500 0 1 2 3 4 5 0 1 -VDS [V] 2 -ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 1.5 1.5 gfs [S] 2 -ID [A] 2 1 0.5 0.5 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 -ID [A] -VGS [V] Rev 1.06 1 page 5 2015-07-24 BSR315P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.62 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-160 µA 1.4 2.5 1.2 max. 2 98 % 1 -VGS(th) [V] RDS(on) [W] 0.8 0.6 typ. 1.5 min. 1 typ. 0.4 0.5 0.2 0 0 -60 -20 20 60 100 140 -60 -20 20 Tj [°C] 60 100 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 25 °C, typ 150 °C, typ 100 IF [A] C [pF] 150 °C, 98% Ciss 102 25 °C, 98% 10-1 Coss Crss 101 10-2 0 20 40 60 -VDS [V] Rev 1.06 0 0.5 1 1.5 -VSD [V] page 6 2015-07-24 BSR315P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-0.62 A pulsed parameter: T j(start) parameter: V DD 1 12 10 25 °C 8 100 °C 30 V 12 V VGS [V] -IAV [A] 125 °C 48 V 6 4 2 0.1 0 1 10 100 1000 0 1 tAV [µs] 2 3 4 5 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 70 V GS Qg -VBR(DSS) [V] 65 60 V gs(th) 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 1.06 page 7 2015-07-24 BSR315P Package Outline SC-59: Outline Footprint Packaging Tape Dimensions in mm Rev 1.06 page 8 2015-07-24 BSR315P Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.06 page 9 2015-07-24