BSS123

BSS 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512 Q67000-S245 D Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 kΩ Values 100 V 100 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 28 °C A 0.17 IDpuls DC drain current, pulsed TA = 25 °C 0.68 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 0.36 1 Sep-13-1996 BSS 123 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA ≤ 350 ≤ 285 Therminal resistance, chip-substrate- reverse side 1)RthJSR DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium K/W 55 / 150 / 56 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 100 - - 0.8 1.5 2 VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V IDSS µA VDS = 100 V, VGS = 0 V, Tj = 25 °C VDS = 100 V, VGS = 0 V, Tj = 125 °C - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 25 °C - 2 60 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance nA - 10 50 Ω RDS(on) VGS = 10 V, ID = 0.17 A - 3 6 VGS = 4.5 V, ID = 0.17 A - 4.5 10 Semiconductor Group 2 Sep-13-1996 BSS 123 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.17 A Input capacitance 0.08 pF - 65 85 - 10 15 - 4 6 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.2 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Rise time - 5 8 - 5 8 - 10 13 - 12 16 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Semiconductor Group 3 Sep-13-1996 BSS 123 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.17 - - 0.68 VSD VGS = 0 V, IF = 0.34 A, Tj = 25 °C Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.85 1.3 Sep-13-1996 BSS 123 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.40 0.18 W Ptot A 0.32 ID 0.14 0.28 0.12 0.24 0.10 0.20 0.08 0.16 0.06 0.12 0.04 0.08 0.02 0.04 0.00 0 0.00 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 Sep-13-1996 BSS 123 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.38 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 19 l Ptot = 0Wkj i h A f g Ω e 0.32 0.28 d 0.24 0.20 c 0.16 0.12 0.08 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 b c 16 VGS [V] a 2.0 ID a RDS (on) 14 12 10 8 6 d e 4 b 0.04 2 f hj i gk VGS [V] = a 0.00 a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.04 0.08 0.12 0.16 0.20 A VDS 0.28 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 1.0 0.40 A ID k 10.0 S 0.8 gfs 0.30 0.7 0.25 0.6 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 A ID 0.8 Sep-13-1996 BSS 123 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.17 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 15 4.6 Ω V 13 4.0 RDS (on) 12 VGS(th) 3.6 11 3.2 10 2.8 9 8 2.4 98% 98% 7 2.0 6 typ 1.6 5 typ 4 1.2 2% 3 0.8 2 0.4 1 0 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 3 10 0 pF A C IF 10 2 10 -1 Ciss 10 1 10 -2 Coss Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -3 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-13-1996 BSS 123 Package outlines SOT-23 Dimensions in mm Semiconductor Group 8 Sep-13-1996