BSS123E6433

BSS 123 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 123 100 V 0.17 A 6Ω SOT-23 SAs Type BSS 123 BSS 123 Ordering Code Q62702-S512 Q67000-S245 D Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Symbol Drain source voltage VDS Drain-gate voltage V 100 Unit V DGR RGS = 20 kΩ 100 Gate source voltage VGS ESD Sensitivity (HBM) as per MIL-STD 883 ± 20 Class 1 Continuous drain current A ID TA = 28 ˚C 0.17 DC drain current, pulsed IDpuls TA = 25 ˚C 0.68 Power dissipation W Ptot TA = 25 ˚C Data Sheet Values 0.36 1 05.99 BSS 123 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 350 Therminal resistance, chip-substrate- reverse side 1) RthJSR ≤ 285 DIN humidity category, DIN 40 040 ˚C K/W E IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium Unit 55 / 150 / 56 15 mm x 16.7 mm x 0.7 mm Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C 100 - - 0.8 1.5 2 VDS = 100 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, V GS = 0 V, Tj = 125 ˚C - 2 60 VDS = 20 V, VGS = 0 V, Tj = 25 ˚C - - 10 Gate threshold voltage V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS Drain-Source on-state resistance - 10 50 Ω RDS(on) VGS = 10 V, ID = 0.17 A - 3 6 VGS = 4.5 V, ID = 0.17 A - 4.5 10 Data Sheet 2 nA nA IGSS VGS = 20 V, VDS = 0 V µA 05.99 BSS 123 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance S gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.17 A Input capacitance 0.08 - 65 85 - 10 15 - 4 6 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time pF Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance 0.2 ns td(on) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Rise time - 5 8 - 5 8 - 10 13 - 12 16 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Ω Data Sheet 3 05.99 BSS 123 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A IS TA = 25 ˚C Inverse diode direct current,pulsed 0.17 - - 0.68 V V SD VGS = 0 V, IF = 0.34 A, Tj = 25 ˚C Data Sheet - ISM TA = 25 ˚C Inverse diode forward voltage - - 4 0.85 1.3 05.99 BSS 123 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.40 0.18 W Ptot A 0.32 ID 0.14 0.28 0.12 0.24 0.10 0.20 0.08 0.16 0.06 0.12 0.04 0.08 0.02 0.04 0.00 0 0.00 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TA ˚C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25˚C 120 V 116 V(BR)DSS114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 5 05.99 BSS 123 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 0.38 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 19 l Ptot = 0Wkj i h A f g Ω e 0.32 0.28 d 0.24 0.20 c 0.16 0.12 0.08 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 b c 16 VGS [V] a 2.0 ID a RDS (on) 14 12 10 8 6 d e 4 b 0.04 2 f hj i g k VGS [V] = a 0.00 a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0.04 0.08 0.12 0.16 0.20 VDS A Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 1.0 0.40 A ID 0.28 ID S 0.8 gfs 0.30 0.7 0.25 0.6 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 0.0 VGS Data Sheet 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 ID 6 05.99 BSS 123 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.17 A, VGS = 10 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 15 4.6 Ω V 13 4.0 RDS (on) 12 VGS(th) 3.6 11 3.2 10 2.8 9 8 2.4 98% 98% 7 2.0 6 typ 1.6 5 typ 4 1.2 2% 3 0.8 2 0.4 1 0 0.0 -60 -20 20 60 100 ˚C 160 -60 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 10 0 pF A IF C 10 2 10 -1 Ciss 10 1 10 -2 Coss Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 5 10 15 20 25 30 V 10 -3 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99