BSS126IXTSA1

BSS126I MOSFET SIPMOS®Small-Signal-Transistor SOT-23 Features 3 •N-channel •Depletionmode •dv/dtrated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 1 2 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 600 V RDS(on),max 700 Ω IDSS,min 0.007 A Type/OrderingCode Package BSS126I PG-SOT23 Final Data Sheet Drain Pin 3 Gate Pin 1 Source Pin 2 Marking Shs 1 RelatedLinks - Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 0.021 0.017 A TA=25°C TA=70°C - 0.085 A TA=25°C - - 6 kV/µs ID=0.016A,VDS=20V, di/dt=200A/µs,Tj,max=150°C VGS -20 - 20 V - ESD sensitivity (HBM) as per JESD22-A114 - - - Class 0 (2|ID|RDS(on)max,ID=0.01A Final Data Sheet 3 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition - pF VGS=-5V,VDS=25V,f=1MHz 2.4 - pF VGS=-5V,VDS=25V,f=1MHz - 1.0 - pF VGS=-5V,VDS=25V,f=1MHz td(on) - 6.1 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Rise time tr - 9.7 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Turn-off delay time td(off) - 14 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Fall time tf - 115 - ns VDD=300V,VGS=-3to7V, ID=0.01A,RG=6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 21 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 0.05 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate to drain charge Qgd - 1.2 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate charge total Qg - 1.4 - nC VDD=400V,ID=10mA,VGS=-3to5V Gate plateau voltage Vplateau - 0.10 - V VDD=400V,ID=10mA,VGS=-3to5V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 0.016 A TA=25°C Diode pulse current IS,pulse - - 0.064 A TA=25°C Diode forward voltage VSD - 0.81 1.2 V VGS=-5V,IF=16mA,Tj=25°C Reverse recovery time trr - 160 - ns VR=300V,IF=0.01A, diF/dt=100A/µs Reverse recovery charge Qrr - 13.2 - nC VR=300V,IF=0.01A, diF/dt=100A/µs Final Data Sheet 4 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 0.6 0.025 0.5 0.020 0.4 ID[A] Ptot[W] 0.015 0.3 0.010 0.2 0.005 0.1 0.0 0 40 80 120 160 0.000 0 40 80 TA[°C] 120 160 TA[°C] Ptot=f(TA) ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance -1 103 10 10 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 100 µs 1 ms 10-2 ZthJA[K/W] 10 ms ID[A] DC 102 10-3 10-4 100 101 102 103 101 10-4 10-3 10-2 VDS[V] 100 101 102 tp[s] ID=f(VDS);TA=25°C;D=0;parameter:tp Final Data Sheet 10-1 ZthJA=f(tp);parameter:D=tp/T 5 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 0.04 1000 10 V 1 V 900 0.5 V 800 0.03 -0.2 V 700 0.2 V 0V 0.02 0.2 V 0.5 V -0.1 V 0.1 V 600 RDS(on)[Ω] ID[A] 0.1 V 0V -0.1 V -0.2 V 500 1V 400 10 V 300 0.01 200 100 0.00 0 4 8 12 0 0.00 16 0.01 VDS[V] 0.02 0.03 0.04 0.015 0.020 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 0.025 0.020 0.020 0.015 0.015 ID[A] gfs[S] 0.025 0.010 0.010 0.005 0.005 0.000 -2 -1 0 1 0.000 0.000 VGS[V] 0.010 ID[A] ID=f(VGS);VDS=10V;Tj=25°C Final Data Sheet 0.005 gfs=f(ID);Tj=25°C 6 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 1600 -1.0 max 1400 max -1.5 1200 -2.0 VGS(th)[V] RDS(on)[Ω] 1000 800 typ 600 -2.5 typ 400 -3.0 200 min 0 -60 -20 20 60 100 140 -3.5 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=3mA;VGS=0V VGS(th)=f(Tj);VDS=3V;ID=8µA;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 2 10-1 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss IF[A] C[pF] 101 10-2 Coss 100 Crss 10-1 0 10 20 30 10-3 0.0 0.5 VDS[V] C=f(VDS);VGS=-3V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I Diagram13:Typ.gatecharge Diagram14:Drain-sourcebreakdownvoltage 6 700 5 120V 300V 480V 4 660 3 620 VBR(DSS)[V] VGS[V] 2 1 0 580 -1 -2 540 -3 -4 0.0 0.4 0.8 1.2 1.6 500 -60 -20 20 Qgate[nC] 60 100 140 180 Tj[°C] VGS=f(Qgate);ID=0.01Apulsed;parameter:VDD ID=f(VGS);VGS=-3V;Tj=25°C Diagram Gate charge waveforms Final Data Sheet 8 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I 5PackageOutlines Figure1OutlinePG-SOT23,dimensionsinmm Final Data Sheet 9 Rev.2.1,2020-11-30 SIPMOS®Small-Signal-Transistor BSS126I RevisionHistory BSS126I Revision:2020-11-30,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2020-06-02 Release of final version 2.1 2020-11-30 Update Marking and typos Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ¯2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2020-11-30