Type
BSS127
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• n-channel
• enhancement mode
VDS
600
V
RDS(on),max
500
W
0.021
A
ID
• Logic level (4.5V rated)
• dv /dt rated
PG-SOT-23
• 100%lead-free; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Pb-free
Halogen-free
Tape and Reel Information
Marking
BSS127
PG-SOT-23
Yes
Yes
H6327: 3000PCS/reel
SIs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
ID
T A=25 °C
0.021
A
T A=70 °C
0.017
I D,pulse
T A=25 °C
0.09
Reverse diode dv /dt
dv /dt
I D=0.021 A,
V DS=480 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
Pulsed drain current
±20
ESD class (JESD22-A114-HBM)
kV/µs
V
0 (2|I D|R DS(on)max,
I D=0.01 A
0.007
0.015
-
Transconductance
Rev. 2.1
g fs
page 2
S
2016-02-10
BSS127
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
21
28
-
2.4
3
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
1.0
1.5
Turn-on delay time
t d(on)
-
6.1
19.0
Rise time
tr
-
9.7
14.5
Turn-off delay time
t d(off)
Fall time
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=300 V,
V GS=10 V, I D=0.01 A,
R G,ext=6 W
pF
ns
-
14
21
tf
-
115
170
Gate to source charge
Q gs
-
0.07
0.10
Gate to drain charge
Q gd
-
0.31
0.5
Gate charge total
Qg
-
0.65
1.0
Gate plateau voltage
V plateau
-
3.56
-
V
-
-
0.016
A
-
-
0.09
-
0.82
1.2
V
-
160
240
ns
-
13.2
19.8
nC
Gate Charge Characteristics
V DD=300 V,
I D=0.01 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 2.1
T A=25 °C
V GS=0 V, I F=0.016 A,
T j=25 °C
V R=300 V,
I F=0.016 A,
di F/dt =100 A/µs
page 3
2016-02-10
BSS127
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.6
0.03
0.5
0.025
0.4
0.02
ID [A]
Ptot [W]
1 Power dissipation
0.3
0.015
0.2
0.01
0.1
0.005
0
0
0
40
80
120
0
160
40
80
TA [°C]
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
10-1
103
10 µs
0.5
100 µs
limited by on-state
resistance
102
1 ms
0.2
10 ms
0.1
ZthJA [K/W]
10-2
ID [A]
100 ms
DC
0.05
0.02
101
0.01
single pulse
10-3
100
10-1
10-5
10-4
100
Rev. 2.1
101
VDS [V]
102
103
page 4
10-4
10-3
10-2
10-1
100
101
102
103
tp [s]
2016-02-10
BSS127
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.03
1000
2.6 V
10 V
4V
3.2 V
3.6 V
3V
0.025
5V
3.8 V
800
4V
0.02
RDS(on) [W]
ID [A]
3.8 V
0.015
3.6 V
600
400
5V
0.01
10 V
3.2 V
200
0.005
3V
2.6 V
0
0
0
2
4
6
8
10
0
0.005
VDS [V]
0.01
0.015
0.02
0.025
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.025
0.02
0.02
0.015
0.015
ID [A]
gfs [S]
0.025
0.01
0.01
0.005
0.005
0
0
1
2
3
0
0.000
4
VGS [V]
Rev. 2.1
0.005
0.010
0.015
0.020
ID [A]
page 5
2016-02-10
BSS127
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.016 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=8 µA
parameter: I D
1000
3.5
900
3
800
max
2.5
600
max
VGS(th) [V]
RDS(on) [W]
700
500
400
typ
2
min
1.5
typ
300
1
200
0.5
100
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
102
10-1
150 °C, 98%
25 °C, 98%
Ciss
150 °C
25 °C
IF [A]
C [pF]
101
Coss
10-2
Crss
100
10-1
10-3
0
5
10
15
20
25
VDS [V]
Rev. 2.1
0
0.4
0.8
1.2
1.6
2
2.4
2.8
VSD [V]
page 6
2016-02-10
BSS127
13 Typ. gate charge
14 Drain-source breakdown voltage
V GS=f(Q gate); I D=0.01 A pulsed
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
10
700
9
680
8
660
7
640
300 V
120 V
480 V
VBR(DSS) [V]
VGS [V]
6
5
4
620
600
580
3
560
2
540
1
520
500
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Qgate [nC]
-60
-20
20
60
100
140
180
Tj [°C]
15 Gate charge waveforms
V GS
Qg
V gs(th)
Q g(th)
Q sw
Q gs
Rev. 2.1
Q gate
Q gd
page 7
2016-02-10
BSS127
SOT-23
Package Outline:
Footprint:
Rev. 2.1
Packaging:
page 8
2016-02-10
BSS127
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2016-02-10
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