BSS169H6327XT

BSS169 SIPMOS® Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode VDS 100 V RDS(on),max 12 W 0.09 A IDSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Halogen-free according to AEC61249-2-21 • Qualified according to AEC Q101 Type Package Pb-free Tape and Reel Information Marking BSS169 PG-SOT-23 Yes H6327: 3000 pcs/reel SFs BSS169 PG-SOT-23 Yes H6906: 3000 pcs/reel sorted in VGS(th) bands 1) SFs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.17 T A=70 °C 0.14 I D,pulse T A=25 °C 0.68 Reverse diode dv /dt dv /dt I D=0.19 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current ESD Class ±20 JESD22-A114-HBM Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 1) 6 Unit A kV/µs V Class 0 0.36 W -55 ... 150 °C 55/150/56 see table on next page and diagram 11 Rev. 1.8 page 1 2015-06-10 BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=-10 V, I D=250 µA 100 - - Gate threshold voltage V GS(th) V DS=3 V, I D=50 µA -2.9 -2.2 -1.8 Drain-source cutoff current I D(off) V DS=100 V, V GS=-10 V, T j=25 °C - - 0.1 V DS=100 V, V GS=-10 V, T j=125 °C - - 10 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current I DSS V GS=0 V, V DS=10 V 90 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, I D=0.05 A - 5.3 12 W V GS=10 V, I D=0.19 A - 2.9 0.20 - S -2 - -1.8 V K -2.15 - -1.95 L -2.3 - -2.1 M -2.45 - -2.25 N -2.6 - -2.4 Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.15 A Threshold voltage V GS(th) sorted in bands2) V GS(th) J 2) V DS=3 V, I D=50 µA Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2015-06-10 BSS169 Parameter Values Symbol Conditions Unit min. typ. max. - 51 68 - 9 13 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 4 7 Turn-on delay time t d(on) - 2.9 4.2 Rise time tr - 2.7 4.0 Turn-off delay time t d(off) - 11 17 Fall time tf - 27 40 Gate to source charge Q gs - 0.12 0.16 Gate to drain charge Q gd - 0.9 1.4 Gate charge total Qg - 2.1 2.8 Gate plateau voltage V plateau - -0.43 - V - - 0.19 A - - 0.76 - 0.82 1.2 V - 20.5 25.6 ns - 9.7 12.1 nC V GS=-10 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=-3…7 V, I D=0.12 A, R G,ext=6 W pF ns Gate Charge Characteristics V DD=80 V, I D=0.12 A, V GS=-3 to 7 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.8 T A=25 °C V GS=-10 V, I F=0.19 A, T j=25 °C V R=50 V, I F=0.12 A, di F/dt =100 A/µs page 3 2015-06-10 BSS169 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.6 0.2 0.5 0.16 0.4 ID [A] Ptot [W] 0.12 0.3 0.08 0.2 0.04 0.1 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 limited by on-state resistance 100 0.5 102 0.2 ZthJA [K/W] ID [A] 10 µs 100 µs 10-1 1DC msms 10 0.1 0.05 0.02 101 0.01 single pulse 10-2 10-3 100 100 101 102 103 VDS [V] Rev. 1.8 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2015-06-10 BSS169 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.5 -0.2 V 14 0V 0.2 V -0.1 V 0.1 V 0.5 V 1V 10 V 0.4 12 0.5 V 10 RDS(on) [W] 0.3 ID [A] 0.2 V 0.1 V 0V 0.2 -0.1 V 8 1V 6 -0.2 V 4 0.1 10 V 2 0 0 0 2 4 6 8 10 0 0.1 VDS [V] 0.2 0.3 0.4 0.5 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.5 0.4 0.35 0.4 0.3 0.25 ID [A] gfs [S] 0.3 0.2 0.2 0.15 0.1 0.1 0.05 0 -2 -1 0 1 2 VGS [V] Rev. 1.8 0 0.00 0.10 0.20 0.30 0.40 ID [A] page 5 2015-06-10 BSS169 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.05 A; V GS=0 V V GS(th)=f(T j); V DS=3 V; I D=50 µA 24 -1.1 20 -1.5 16 -1.9 VGS(th) [V] RDS(on) [W] parameter: I D 98 % 12 Max -2.3 typ 8 -2.7 Min typ 4 -3.1 0 -3.5 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Threshold voltage bands 12 Typ. capacitances I D=f(V GS); V DS=3 V; T j=25 °C C =f(V DS); V GS=-10 V; f =1 MHz 10 103 1 102 ID [mA] Ciss M L K J C [pF] N 0.1 Coss 101 50 µA 0.01 100 -3 -2.5 -2 -1.5 -1 VGS [V] Rev. 1.8 Crss 0 10 20 30 VDS [V] page 6 2015-06-10 BSS169 13 Forward characteristics of reverse diode 15 Typ. gate charge I F=f(V SD) V GS=f(Q gate); I D=0.12 A pulsed parameter: T j parameter: V DD 100 8 0.5 VDS(max) 25 °C 150 °C 6 150 °C, 98% 0.2 VDS(max) 25 °C, 98% 10-1 0.8 VDS(max) VGS [V] 4 IF [A] 10-2 2 0 10-3 -2 -4 10-4 0 0.5 1 1.5 VSD [V] 0 0.5 1 1.5 2 2.5 Qgate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA VBR(DSS) [V] 120 100 80 -60 -20 20 60 100 140 180 Tj [°C] Rev. 1.8 page 7 2015-06-10 BSS169 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.8 page 8 2015-06-10 BSS169 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.8 page 9 2015-06-10