BSS205NH6327XTSA1

BSS205N OptiMOS™2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 V DS • N-channel R DS(on),max • Enhancement mode • Super Logic level (2.5V rated) 2.5 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23 • 100% lead-free; RoHS compliant 3 • Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS205N SOT23 H6327: 3000 pcs/ reel SZs Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.5 T A=70 °C 2.0 10 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=2.5 A, R GS=25 Ω 10.8 Reverse diode dv /dt dv /dt I D=2.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature A mJ kV/µs ±12 V 0.5 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mkm long; they are present on both sides of the PCB. Rev 2.4 page 2 2011-07-08 BSS205N Parameter Values Symbol Conditions Unit min. typ. max. - 315 419 - 114 152 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 16 24 Turn-on delay time t d(on) - 5.80 - Rise time tr - 2.9 - Turn-off delay time t d(off) - 11.0 - Fall time tf - 2.4 - Gate to source charge Q gs - 0.65 0.9 Gate to drain charge Q gd - 0.4 0.6 Gate charge total Qg - 2.1 3.2 Gate plateau voltage V plateau - 2 - V - - 0.5 A - - 10 - 0.8 1.1 V - 10 - ns - 2.2 - nC V GS=0 V, V DS=10 V, f =1 MHz V DD=10 V, V GS=4.5 V, I D=2.5 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=10 V, I D=2.5 A, V GS=0 to 4.5 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.4 T A=25 °C V GS=0 V, I F=2.5 A, T j=25 °C V R=10 V, I F=2.5 A, di F/dt =100 A/µs page 3 2011-07-08 BSS205N 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥4.5 V 3 0.5 2.5 2 I D [A] P tot [W] 0.375 0.25 1.5 1 0.125 0.5 0 0 0 40 80 120 0 20 40 T A [°C] 60 80 100 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 160 103 10 µs 101 1 ms 0.5 100 µs 102 0.2 10 ms 0.1 I D [A] Z thJA [K/W] 100 10 140 T A [°C] -1 DC 0.05 101 0.02 0.01 single pulse 100 10 -2 10-3 10 10-1 -1 10 0 10 1 10 2 V DS [V] Rev 2.4 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2011-07-08 BSS205N 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 100 4.5 V 3V 2.2 V 90 2.5 V 8 80 2.5 V 70 R DS(on) [mΩ] 2.4 V I D [A] 6 4 2.2 V 60 3V 50 3.5 V 4.5 V 40 6V 30 2V 2 20 10 1.8 V 0 0 0 1 2 3 0 2 4 V DS [V] 6 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 4 16 3 12 g fs [S] I D [A] 7 Typ. transfer characteristics 2 25 °C 1 10 8 4 150 °C 0 0 0 1 2 3 V GS [V] Rev 2.4 8 I D [A] 0 2 4 6 8 I D [A] page 5 2011-07-08 BSS205N 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2.5 A; V GS=4.5 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D 1.6 80 98 % 1.2 98 % V GS(th) [V] R DS(on) [mΩ] 60 typ 40 typ 0.8 2% 0.4 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C 100 Coss 10 I F [A] C [pF] Ciss 2 10-1 150 °C 150 °C, 98% 10-2 25 °C, 98% Crss 101 10-3 0 5 10 15 20 V DS [V] Rev 2.4 0 0.4 0.8 1.2 1.6 V SD [V] page 6 2011-07-08 BSS205N 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=2.5 A pulsed parameter: T j(start) parameter: V DD 101 8 7 6 25 °C 10 V 100 °C V GS [V] I AV [A] 5 100 125 °C 4 4V 16 V 3 2 1 10-1 0 100 101 102 103 0 1 t AV [µs] 2 3 4 Q gate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 25 V GS 24 Qg 23 V BR(DSS) [V] 22 21 20 V g s(th) 19 18 Q g(th) 17 Q sw Q gs 16 -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 2.4 page 7 2011-07-08 BSS205N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.4 page 8 2011-07-08 BSS205N Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 page 9 2011-07-08