BSS223PW H6327

BSS 223PW OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS(on) 1.2 Ω • Super Logic Level (2.5 V rated) ID -0.39 A • 150°C operating temperature PG-SOT-323 3 • Avalanche rated • dv/dt rated 2 1 • Qualified according to AEC Q101 VSO05561 • Halogen-free according to IEC61249-2-21 Drain pin 3 Type Package Tape and Reel BSS 223PW PG-SOT-323 H6327:3000pcs/r. X4s Gate pin1 Marking Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -0.39 TA=70°C -0.31 ID puls Pulsed drain current Unit -1.56 TA=25°C EAS 1.4 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.25 W -55... +150 °C Avalanche energy, single pulse ID =-0.39 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.39A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 55/150/56 ESD Class; JESD22-A114-HBM Class 0 Rev 1.5 Page 1 2011-07-13 BSS 223PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 180 Thermal resistance, junction - ambient, leaded RthJA - - 500 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-1.5µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.27 2.1 Ω RDS(on) - 0.7 1.2 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Rev 1.5 Page 2 2011-07-13 BSS 223PW Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.35 0.7 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-0.31A Input capacitance Ciss VGS =0, VDS =-15V, - 45 56 Output capacitance Coss f=1MHz - 21 26 Reverse transfer capacitance Crss - 17 22 Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 3.8 5.7 Rise time tr ID =-0.39A, RG=6Ω - 5 7.5 Turn-off delay time td(off) - 5.1 7.6 Fall time tf - 3.2 4.8 - -0.04 - -0.4 -0.5 - -0.5 -0.62 V(plateau) VDD =-10V, ID =-0.39A - -2.2 -2.7 IS - - -0.39 A - - -1.56 -1.33 V ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-0.39A VDD =-10V, ID =-0.39A, -0.05 nC VGS =0 to -4.5V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0, IF=-0.39 - -1 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 7.6 9.5 ns Reverse recovery charge Qrr diF /dt=100A/µs - 1.1 1.4 nC Rev 1.5 Page 3 2011-07-13 BSS 223PW 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V BSS 223PW -0.42 0.28 W A 0.24 -0.36 0.22 -0.32 BSS 223PW -0.28 0.18 ID Ptot 0.2 -0.24 0.16 0.14 -0.2 0.12 -0.16 0.1 -0.12 0.08 0.06 -0.08 0.04 -0.04 0.02 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 °C 1 BSS 223PW 10 3 BSS 223PW K/W A 10 2 10 1 R DS ( on ) = ID V DS -10 0 Z thJA /I D tp = 180.0µs 10 0 1 ms D = 0.50 0.20 -10 -1 10 -1 0.10 0.05 10 ms 0.02 10 -2 -10 -2 -1 -10 -10 0 DC 1 -10 V -10 2 VDS Rev 1.5 10 -3 -7 10 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2011-07-13 BSS 223PW 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C parameter: VGS 0.7 4 3V 4V A 4.5V 6V 7V 8V 0.5 10V RDS(on) Ω -I D 2.5V 3 2.5 0.4 2 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V 2.2V 0.3 1.5 0.2 1 0.1 0 0 0.5 0.3 0.6 V 0.9 0 0 1.5 0.1 0.2 0.3 0.4 0.5 A -VDS 0.7 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 0.7 1.1 S A 0.9 0.8 g fs -I D 0.5 0.4 0.7 0.6 0.5 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.5 1 1.5 2 V 3 -VGS Rev 1.5 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -ID Page 5 2011-07-13 BSS 223PW 9 Drain-source on-resistance 10 Typ. gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -0.39 A, VGS = -4.5 V parameter: VGS = VDS 1.6 1.6 V 98% - VGS(th) RDS(on) Ω 1.2 1 98% 1.2 1 typ. typ. 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 -60 -20 20 60 °C 100 2% 0 -60 160 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz; Tj = 25 °C parameter: Tj 10 2 -10 1 BSS 223PW A Ciss C IF -10 0 pF Coss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 2 4 6 8 10 12 V -10 -2 0 15 -VDS Rev 1.5 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2011-07-13 BSS 223PW 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -0.39 A VGS = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -0.39 A pulsed; Tj = 25 °C 1.4 -16 BSS 223PW V mJ -12 EAS VGS 1 -10 0.8 -8 20% 0.6 -6 50% 80% 0.4 -4 0.2 -2 0 20 40 60 80 100 120 °C 0 0 160 Tj 0.2 0.4 0.6 0.8 1 nC 1.3 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSS 223PW V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev 1.5 Page 7 2011-07-13 BSS 223PW Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 Page 3 2011-07-13