BSS314PEH6327XTSA1

BSS314PE OptiMOS™-P 3 Small-Signal-Transistor Features Product Summary -30 VDS • P-channel RDS(on),max • Enhancement mode • Logic level (4.5V rated) VGS=-10 V 140 VGS=-4.5 V 230 ID -1.5 V mW A • ESD protected PG-SOT-23 • Qualified according AEC Q101 3 • 100% Lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 1 Type Package Tape and Reel Information BSS314PE PG-SOT23 H6327: 3000 pcs/ reel Marking YGs 2 2 3 Lead Free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C -1.5 T A=70 °C -1.2 -6.1 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-1.5 A, R GS=25 W 6 mJ Reverse diode dv /dt dv /dt I D=-1.5 A, V DS=-16 V, di /dt =-200A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 2.3 page 1 ±20 V 0.5 W -55 ... 150 °C 1000V to 2000V 260 °C °C 55/150/56 °C 2012-10-19 BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint 1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS= 0V, I D=-250µA -30 - - Gate threshold voltage V GS(th) V DS=VGS, I D=-6.3µA -1 -1.5 -2 Drain-source leakage current I DSS V DS=-30V, V GS=0 V, T j=25 °C - - -1 V DS=-30V, V GS=0V, T j=150 °C - - -100 V mA Gate-source leakage current I GSS V GS=-20V, V DS=0V - - -5 μA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-1.2A - 153 230 mW V GS=-10V, I D=-1.5A - 107 140 3 - Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.2 A S 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB. Rev 2.3 page 2 2012-10-19 BSS314PE Parameter Values Symbol Conditions Unit min. typ. max. - 221 294 - 126 168 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=-15 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 7 11 Turn-on delay time t d(on) - 5.1 - Rise time tr - 3.9 - Turn-off delay time t d(off) - 12.4 - Fall time tf - 2.8 - Gate to source charge Q gs - -0.7 - Gate to drain charge Q gd - -0.3 - Gate charge total Qg - -2.9 - Gate plateau voltage V plateau - -3.2 - V - - -0.5 A - - -6.1 - -0.8 -1.1 V - 12.5 - ns - 4.3 - nC V DD=-15V, V GS=-10 V, I D=-1.5 A, R G=6 W ns Gate Charge Characteristics V DD=-15V, I D=-1.5A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.3 T A=25 °C V GS=0 V, I F=-1.5A, T j=25 °C V R=-15 V, I F=-1.5A, di F/dt =100 A/µs page 3 2012-10-19 BSS314PE 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≤-10 V 1.6 0.5 1.2 ID [A] Ptot [W] 0.375 0.25 0.8 0.4 0.125 0 0 0 40 80 120 0 20 40 TA [°C] 60 80 100 120 140 160 101 102 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 103 1 µs 10 µs 100 µs 0.5 100 1 ms 102 0.2 10 ms 0.1 ZthJA [K/W] ID [A] 10-1 DC 10-2 0.05 101 0.02 0.01 single pulse 100 10-3 10-4 10-1 10-2 10-1 100 101 102 VDS [V] Rev 2.3 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2012-10-19 BSS314PE 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 500 5V 450 7 3V 4.5 V 10 V 400 6 3.3 V 350 4V 4V RDS(on) [mW] ID [A] 5 4 3 300 250 200 3.5 V 4.5 V 150 2 5V 3.3 V 10 V 100 3V 1 50 2.8 V 0 0 0 1 2 3 4 5 0 1 2 3 VDS [V] 4 5 6 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 6 8 7 5 6 4 gfs [S] ID [A] 5 3 4 3 2 25 °C 150 °C 2 1 1 0 0 0 1 2 3 4 5 VGS [V] Rev 2.3 0 1 2 3 4 5 6 7 8 ID [A] page 5 2012-10-19 BSS314PE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=-6.3 µA parameter: I D 250 2.4 2 200 98 % 150 typ VGS(th) [V] RDS(on) [mW] 1.6 98 % typ 100 1.2 2% 0.8 50 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C 150 °C, 98% Ciss 150 °C Coss 100 IF [A] C [pF] 102 25 °C, 98% 10-1 Crss 101 10-2 100 10-3 0 5 10 15 20 VDS [V] Rev 2.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD [V] page 6 2012-10-19 BSS314PE 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=-1.5 A pulsed parameter: T j(start) parameter: V DD 12 101 10 8 100 VGS [V] IAV [A] 4V 25 °C 16 V 6 10 V 100 °C 4 125 °C 2 0 10-1 100 101 102 0 103 1 tAV [µs] 2 3 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 33 V GS Qg 32 VBR(DSS) [V] 31 30 V gs(th) 29 28 Q g(th) Q sw Q gs 27 -60 -20 20 60 100 Q gate Q gd 140 Tj [°C] Rev 2.3 page 7 2012-10-19 BSS314PE SOT-23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.3 page 8 2012-10-19 BSS314PE Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 2012-10-19