BSS79C

BSS79, BSS81 NPN Silicon Switching Transistors 3
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP) 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E 3=C SOT23 BSS81B CDs 1=B 2=E 3=C SOT23 BSS81C CGs 1=B 2=E 3=C SOT23 BSS79 BSS81 40 35 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Collector-base voltage VCBO 75 Emitter-base voltage VEBO 6 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 800 1 Unit V V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS
220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V V(BR)CEO BSS79 40 - - BSS81 35 - - V(BR)CBO 75 - - V(BR)EBO 6 - - ICBO - - 10 nA ICBO - - 10 µA IEBO - - 10 nA Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V - hFE BSS79/81B 20 - - BSS79/81C 35 - - BSS79/81B 25 - - BSS79/81C 50 - - BSS79/81B 35 - - BSS79/81C 75 - - BSS79/81B 40 - 120 BSS79/81C 100 - 300 BSS79/81B 25 - - BSS79/82C 40 - - Collector-emitter saturation voltage1) V VCEsat IC = 150 mA, IB = 15 mA - - 0.3 IC = 500 mA, IB = 50 mA - - 1.3 IC = 150 mA, IB = 15 mA - - 1.2 IC = 500 mA, IB = 50 mA - - 2.0 Base-emitter saturation voltage 1) VBEsat 1) Pulse test: t ≤=300µs, D = 2% 2 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 6 - pF td - - 10 ns tr - - 25 tstg - - 250 tf - - 60 AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Test circuits Delay and rise time Storage and fall time 30 V 30 V ~100 µ s 200 Ω Osc. 9.9 V 0 16.2 V 619 Ω 200 Ω < 5 ns 1 kΩ 0 0.5 V Osc. -13.8 V ~ 500 µ s EHN00045 -3.0 V EHN00046 Oscillograph: R > 100k
C < 12pF tr < 5ns 3 Nov-30-2001 BSS79, BSS81 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 C cb BSS 79/81 EHP00672 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 20V BSS 79/81 EHP00673 Ptot max 5 Ptot DC 10 3 tp tp D= T 10 2 V CB Permissible pulse load 10 3 5 V BSS 79/81 EHP00674 MHz fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 2 10 2 5 5 2 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 5 10 3 ΙC tp 4 Nov-30-2001 BSS79, BSS81 Saturation voltage IC = f (VBEsat , VCEsat) DC current gain hFE = f (I C) hFE = 10 VCE = 10V ΙC 10 3 EHP00756 2 BSS 79/81 EHP00676 mA 10 2 5 h FE 150 ˚C 5 V BE V CE 25 ˚C 10 10 2 1 -50 ˚C 5 5 10 0 0.2 0 0.4 10 1 -1 10 0.8 1.0 V 1.2 V BE sat , V CE sat 0.6 10 0 10 Delay time td = f (IC ) Storage time t stg = f (I C) Rise time tr = f (IC) Fall time 10 3 ns td, tr BSS 79/81 EHP00677 10 3 1 2 10 ΙC mA 10 3 t f = f (IC) BSS 79/81 EHP00678 ns 5 t stg , t f 5 VCC = 30 V h FE = 10 tr 10 2 5 t stg t r VBE = 5 V td VBE = 2 V hFE = 10 10 2 5 tf h FE = 20 hFE = 10 td V BE = 0 V 10 1 10 0 5 10 1 5 10 2 mA 5 10 10 1 1 10 3 ΙC 5 10 2 mA 5 10 3 ΙC 5 Nov-30-2001 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.